Low work function silicon collector for thermionic converters

To improve the efficiency of present thermionic converters, single crystal silicon was investigated as a low work function collector material. The experiments were conducted in a test vehicle which resembled an actual thermionic converter. Work function as low as 1.0eV was obtained with an n-type silicon. The stabilities of the activated surfaces at elevated temperatures were tested by raising the collector temperature up to 829 K. By increasing the Cs arrival rate, it was possible to restore the originally activated low work function of the surface at elevated surface temperatures. These results, plotted in the form of Rasor-Warner curve, show a behavior similar to that of metal electrode except that the minimum work function was much lower with silicon than with metals

Silicon crystal as a low work function collector

A test vehicle with a low work function collector which can be incorporated in a thermionic converter was constructed from standard vacuum components including an ultrahigh vacuum ion pump. The collector assembly was fabricated by diffusion bonding a (100) oriented silicon single crystal to a molybdenum block. The silicon surface was treated with cesium and oxygen to produce an NEA-type condition and the results were tested by photoemission and work function measurements. An n-type silicon collector was successfully activated to a work function of 1.0 eV, which was verified by photoemission spectral yield measurements. The stability test of an activated surface at elevated temperatures was conducted in the range from room temperature to 619 K, which was slightly lower than the designed collector temperature of 700 K. The work function measurements clearly demonstrated that the behavior of cesium replenishment on the activated Si surface was similar in nature to that of a metallic surface; that is, the loss of cesium by thermal desorption could be compensated by maintaining an adequate vapor pressure of cesium

Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory

The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an electrostatic analysis, we analyze the electromechanical switching operation of a mechanically bistable NEM floating gate by applying gate voltage. We show that switching voltage can be reduced to less than 10V by reducing the zero-bias displacement of the floating gate and optimizing the cavity structure to improve mechanical symmetry. We also analyze the electrical readout property of the NEM memory devices by combining the electromechanical simulation with a drift-diffusion analysis We demonstrate that the mechanically bistable states of the floating gate can be detected via the changes in drain current with an ON/OFF current ratio of about 3 x 10 (C) 2009 The Japan Society of Applied Physic

Distribution of Microscopic Energy Flux in Equilibrium State

The distribution function P(j) of the microscopic energy flux, j, in equilibrium state is studied. It is observed that P(j) has a broad peak in small j regime and a stretched-exponential decay for large j. The peak structure originates in a potential advection term and energy transfer term between the particles. The stretched exponential tail comes from the momentum energy advection term.Comment: 5 pages, 2 figure

Electronic Structure of Charge- and Spin-controlled Sr_{1-(x+y)}La_{x+y}Ti_{1-x}Cr_{x}O_{3}

We present the electronic structure of Sr_{1-(x+y)}La_{x+y}Ti_{1-x}Cr_{x}O_{3} investigated by high-resolution photoemission spectroscopy. In the vicinity of Fermi level, it was found that the electronic structure were composed of a Cr 3d local state with the t_{2g}^{3} configuration and a Ti 3d itinerant state. The energy levels of these Cr and Ti 3d states are well interpreted by the difference of the charge-transfer energy of both ions. The spectral weight of the Cr 3d state is completely proportional to the spin concentration x irrespective of the carrier concentration y, indicating that the spin density can be controlled by x as desired. In contrast, the spectral weight of the Ti 3d state is not proportional to y, depending on the amount of Cr doping.Comment: 4 pages, 3 figures. Accepted for publication in Phys. Rev. Let

Curved Space (Matrix) Membranes

Hamiltonian formulations of M-branes moving in curved backgrounds are given