Low work function silicon collector for thermionic converters

Abstract

To improve the efficiency of present thermionic converters, single crystal silicon was investigated as a low work function collector material. The experiments were conducted in a test vehicle which resembled an actual thermionic converter. Work function as low as 1.0eV was obtained with an n-type silicon. The stabilities of the activated surfaces at elevated temperatures were tested by raising the collector temperature up to 829 K. By increasing the Cs arrival rate, it was possible to restore the originally activated low work function of the surface at elevated surface temperatures. These results, plotted in the form of Rasor-Warner curve, show a behavior similar to that of metal electrode except that the minimum work function was much lower with silicon than with metals