Silicon crystal as a low work function collector

Abstract

A test vehicle with a low work function collector which can be incorporated in a thermionic converter was constructed from standard vacuum components including an ultrahigh vacuum ion pump. The collector assembly was fabricated by diffusion bonding a (100) oriented silicon single crystal to a molybdenum block. The silicon surface was treated with cesium and oxygen to produce an NEA-type condition and the results were tested by photoemission and work function measurements. An n-type silicon collector was successfully activated to a work function of 1.0 eV, which was verified by photoemission spectral yield measurements. The stability test of an activated surface at elevated temperatures was conducted in the range from room temperature to 619 K, which was slightly lower than the designed collector temperature of 700 K. The work function measurements clearly demonstrated that the behavior of cesium replenishment on the activated Si surface was similar in nature to that of a metallic surface; that is, the loss of cesium by thermal desorption could be compensated by maintaining an adequate vapor pressure of cesium