Drought-associated changes in climate and their relevance for ecosystem experiments and models

Drought periods can have important impacts on plant productivity and ecosystem functioning, but climatic conditions other than the lack of precipitation during droughts have never been quantified and have therefore not been considered explicitly in both experimental and modeling studies. Here, we identify which climatic characteristics deviate from normal during droughts and how these deviations could affect plant responses. Analysis of 609 years of daily data from nine Western European meteorological stations reveals that droughts in the studied region are consistently associated with more sunshine (+45 %), increased mean (+1.6 °C) and maximum (+2.8 °C) air temperatures and vapour pressure deficits that were 51 % higher than under normal conditions. These deviations from normal increase significantly as droughts progress. Using the process-model ORCHIDEE, we simulated droughts consistent with the results of the dataset analysis and compared water and carbon exchange of three different vegetation types during such natural droughts and droughts in which only the precipitation was affected. The comparison revealed contrasting responses: carbon loss was higher under natural drought in grasslands, while increased carbon uptake was found especially in decidious forests. This difference was attributed to better access to water reserves in forest ecosystems which prevented drought stress. This demonstrates that the warmer and sunnier conditions naturally associated with droughts can either improve growth or aggravate drought-related stress, depending on water reserves. As the impacts of including or excluding climatic parameters that correlate with drought are substantial, we propose that both experimental and modeling efforts should take into account other environmental factors than merely precipitation

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

Strongly reduced bias dependence in spin-tunnel junctions obtained by ultraviolet light assisted oxidation

For future implementation of ferromagnetic tunnel junctions, we need a better understanding of the influence of the insulating barrier preparation method on the junction resistance, tunnel magnetoresistance (TMR), and its voltage bias dependence. In this letter, we focus on the bias dependence of junctions (Co-Al2O3-Ni80Fe20) prepared by ultraviolet light assisted in situ oxidation in an O-2 ambient. For an initial Al thickness of 1.3 nm, the resistance times area product of the junctions is 60 k Omega mu m(2), while showing up to 20% TMR at 5 mV bias. The decrease of TMR with bias voltage up to 1 V is remarkably small leading to V-1/2, for which half of the low-bias TMR remains, well over 0.6 V. (C) 2000 American Institute of Physics. [S0003-6951(00)02908-9]

The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs

Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information

Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−x_{1-x}Mnx_{x}As

The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing $x$ for $x\leq0.083$, exhibiting a direct correlation to the observed $T_c$. The optical technique reported here provides an unambiguous means of determining the hole density in this important new class of ``spintronic'' semiconductor materials.Comment: two-column format 5 pages, 4 figures, to appear in Physical Review

Evaluation of vacuum bonded GaAs/Si spin-valve transistors

In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%

Spin-dependent transport in metal/semiconductor tunnel junctions

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate spin-polarized carriers. A transport model is presented that takes account of carrier capture in the semiconductor surface states, and describes the semiconductor surface in terms of a spin-dependent energy distribution function. The so-called surface spin-splitting can be calculated from the balance of the polarized electron and hole flow in the semiconductor subsurface region, the polarized tunnelling current across the tunnel barrier between the magnetic material and the semiconductor surface, and the spin relaxation at the semiconductor surface. Measurements are presented of the circular-polarization-dependent photocurrent (the so-called helicity asymmetry) in thin-film tunnel junctions of Co/Al2O3/GaAs. In the absence of a tunnel barrier, the helicity asymmetry is caused by magneto-optical effects (magnetic circular dichroism). In the case where a tunnel barrier is present, the data cannot be explained by magneto-optical effects alone; the deviations provide evidence that spin-polarized tunnelling due to optical spin orientation occurs. In Co/τ-MnAl/AlAs/GaAs junctions no deviations from the magneto-optical effects are observed, most probably due to the weak spin polarization of τ-MnAl along the tunnelling direction; the latter is corroborated by bandstructure calculations. Finally, the application of photoexcited GaAs for spin-polarized tunnelling in a scanning tunnelling microscope is discussed.

Spatially resolved ultrafast precessional magnetization reversal

Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and transverse magnetic field pulses. Though the response is initially spatially uniform, dephasing occurs leading to nonuniformity and transient demagnetization. This nonuniformity comes in spite of a novel method for suppression of end domains in remanence. The results have implications for the reliability of ballistic precessional switching in magnetic devices.Comment: 17 pages (including 4 figures), submitted to Phys. Rev. Let

Spatial structure of Mn-Mn acceptor pairs in GaAs

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $\delta$-doped layers grown on differently oriented substrates.Comment: 4 pages, 4 figure

Tumour necrosis factor alpha increases melphalan concentration in tumour tissue after isolated limb perfusion

Several possible mechanisms for the synergistic anti-tumour effects between tumour necrosis factor alpha (TNF-α) and melphalan after isolated limb perfusion (ILP) have been presented. We found a significant sixfold increase in melphalan tumour tissue concentration after ILP when TNF-α was added to the perfusate, which provides a straightforward explanation for the observed synergism between melphalan and TNF-α in ILP. © 2000 Cancer Research Campaig