808 research outputs found
Design guide for high pressure oxygen systems
A repository for critical and important detailed design data and information, hitherto unpublished, along with significant data on oxygen reactivity phenomena with metallic and nonmetallic materials in moderate to very high pressure environments is documented. This data and information provide a ready and easy to use reference for the guidance of designers of propulsion, power, and life support systems for use in space flight. The document is also applicable to designs for industrial and civilian uses of high pressure oxygen systems. The information presented herein are derived from data and design practices involving oxygen usage at pressures ranging from about 20 psia to 8000 psia equal with thermal conditions ranging from room temperatures up to 500 F
Decoherence of electron spin qubits in Si-based quantum computers
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor
impurity or quantum dot in SiGe heterostructures is investigated. The aim is to
evaluate the importance of decoherence from this mechanism in several important
solid-state quantum computer designs operating at low temperatures. We
calculate the relaxation rate as a function of [100] uniaxial strain,
temperature, magnetic field, and silicon/germanium content for Si:P bound
electrons. The quantum dot potential is much smoother, leading to smaller
splittings of the valley degeneracies. We have estimated these splittings in
order to obtain upper bounds for the relaxation rate. In general, we find that
the relaxation rate is strongly decreased by uniaxial compressive strain in a
SiGe-Si-SiGe quantum well, making this strain an important positive design
feature. Ge in high concentrations (particularly over 85%) increases the rate,
making Si-rich materials preferable. We conclude that SiGe bound electron
qubits must meet certain conditions to minimize decoherence but that
spin-phonon relaxation does not rule out the solid-state implementation of
error-tolerant quantum computing.Comment: 8 figures. To appear in PRB-July 2002. Revisions include: some
references added/corrected, several typos fixed, a few things clarified.
Nothing dramati
Candle soot-based super-amphiphobic coatings resist protein adsorption
Super nonfouling surfaces resist protein adhesion and have a broad field of possible applications in implant technology, drug delivery, blood compatible materials, biosensors, and marine coatings. A promising route toward nonfouling surfaces involves liquid repelling architectures. The authors here show that soot-templated super-amphiphobic (SAP) surfaces prepared from fluorinated candle soot structures are super nonfouling. When exposed to bovine serum albumin or blood serum, x-ray photoelectron spectroscopy and time of flight secondary ion mass spectrometry analysis showed that less than 2 ng/cm(2) of protein was adsorbed onto the SAP surfaces. Since a broad variety of substrate shapes can be coated by soot-templated SAP surfaces, those are a promising route toward biocompatible materials design
X-Band ESR Determination of Dzyaloshinsky-Moriya Interaction in 2D SrCu(BO) System
X-band ESR measurements on a single crystal of SrCu(BO) system in
a temperature range between 10 K and 580 K are presented. The temperature and
angular dependence of unusually broad ESR spectra can be explained by the
inclusion of antisymmetric Dzyaloshinsky-Moriya (DM) interaction, which yields
by far the largest contribution to the linewidth. However, the well-accepted
picture of only out-of-plane interdimer DM vectors is not sufficient for
explanation of the observed angular dependence. In order to account for the
experimental linewidth anisotropy we had to include sizable in-plane components
of interdimer as well as intradimer DM interaction in addition to the
out-of-plane interdimer one. The nearest-neighbor DM vectors lie perpendicular
to crystal anisotropy c-axis due to crystal symmetry. We also emphasize that
above the structural phase transition occurring at 395 K dynamical mechanism
should be present allowing for instantaneous DM interactions. Moreover, the
linewidth at an arbitrary temperature can be divided into two contributions;
namely, the first part arising from spin dynamics governed by the spin
Hamiltonian of the system and the second part due to significant spin-phonon
coupling. The nature of the latter mechanism is attributed to phonon-modulation
of the antisymmetric interaction, which is responsible for the observed linear
increase of the linewidth at high temperatures.Comment: 17 pages, 4 figures, submitted to PR
Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition
We report the low temperature carrier transport properties of a series of
nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples
very close to the critical concentration N_c for the metal-insulator
transition. The concentration of the sample closest to N_c is 1.0004N_c and it
is unambiguously shown that the critical conductivity exponent is 0.5.
Properties of insulating samples are discussed in the context of Efros and
Shklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio
Dopant-induced crossover from 1D to 3D charge transport in conjugated polymers
The interplay between inter- and intra-chain charge transport in bulk
polythiophene in the hopping regime has been clarified by studying the
conductivity as a function of frequency (up to 3 THz), temperature and doping
level. We present a model which quantitatively explains the observed crossover
from quasi-one-dimensional transport to three-dimensional hopping conduction
with increasing doping level. At high frequencies the conductivity is dominated
by charge transport on one-dimensional conducting chains.Comment: 4 pages, 2 figure
Stability of sub-surface oxygen at Rh(111)
Using density-functional theory (DFT) we investigate the incorporation of
oxygen directly below the Rh(111) surface. We show that oxygen incorporation
will only commence after nearly completion of a dense O adlayer (\theta_tot =
1.0 monolayer) with O in the fcc on-surface sites. The experimentally suggested
octahedral sub-surface site occupancy, inducing a site-switch of the on-surface
species from fcc to hcp sites, is indeed found to be a rather low energy
structure. Our results indicate that at even higher coverages oxygen
incorporation is followed by oxygen agglomeration in two-dimensional
sub-surface islands directly below the first metal layer. Inside these islands,
the metastable hcp/octahedral (on-surface/sub-surface) site combination will
undergo a barrierless displacement, introducing a stacking fault of the first
metal layer with respect to the underlying substrate and leading to a stable
fcc/tetrahedral site occupation. We suggest that these elementary steps,
namely, oxygen incorporation, aggregation into sub-surface islands and
destabilization of the metal surface may be more general and precede the
formation of a surface oxide at close-packed late transition metal surfaces.Comment: 9 pages including 9 figure files. Submitted to Phys. Rev. B. Related
publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm
Quantum control of hybrid nuclear-electronic qubits
Pulsed magnetic resonance is a wide-reaching technology allowing the quantum
state of electronic and nuclear spins to be controlled on the timescale of
nanoseconds and microseconds respectively. The time required to flip either
dilute electronic or nuclear spins is orders of magnitude shorter than their
decoherence times, leading to several schemes for quantum information
processing with spin qubits. We investigate instead the novel regime where the
eigenstates approximate 50:50 superpositions of the electronic and nuclear spin
states forming "hybrid nuclear-electronic" qubits. Here we demonstrate quantum
control of these states for the first time, using bismuth-doped silicon, in
just 32 ns: this is orders of magnitude faster than previous experiments where
pure nuclear states were used. The coherence times of our states are five
orders of magnitude longer, reaching 4 ms, and are limited by the
naturally-occurring 29Si nuclear spin impurities. There is quantitative
agreement between our experiments and no-free-parameter analytical theory for
the resonance positions, as well as their relative intensities and relative
Rabi oscillation frequencies. In experiments where the slow manipulation of
some of the qubits is the rate limiting step, quantum computations would
benefit from faster operation in the hybrid regime.Comment: 20 pages, 8 figures, new data and simulation
Materials with Colossal Dielectric Constant: Do They Exist?
Experimental evidence is provided that colossal dielectric constants, epsilon
>= 1000, sometimes reported to exist in a broad temperature range, can often be
explained by Maxwell-Wagner type contributions of depletion layers at the
interface between sample and contacts, or at grain boundaries. We demonstrate
this on a variety of different materials. We speculate that the largest
intrinsic dielectric constant observed so far in non-ferroelectric materials is
of order 100.Comment: 3 figure
Crystal Field and Dzyaloshinsky-Moriya Interaction in orbitally ordered La_{0.95}Sr_{0.05}MnO_3: An ESR Study
We present a comprehensive analysis of Dzyaloshinsky-Moriya interaction and
crystal-field parameters using the angular dependence of the paramagnetic
resonance shift and linewidth in single crystals of La_{0.95}Sr_{0.05}MnO_3
within the orthorhombic Jahn-Teller distorted phase. The Dzyaloshinsky-Moriya
interaction (~ 1K) results from the tilting of the MnO_6 octahedra against each
other. The crystal-field parameters D and E are found to be of comparable
magnitude (~ 1K) with D ~= -E. This indicates a strong mixing of the |3z^2-r^2>
and |x^2-y^2> states for the real orbital configuration.Comment: 12 pages, 6 figure
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