Atomic scale investigation of clean and epi-grown Si(001) surfaces using scanning tunneling microscopy

Ankara : Department of Physics and the Institute of Engineering and Science of Bilkent University, 1996.Thesis (Master's) -- Bilkent University, 1996.Includes bibliographical references leaves 60-65.III ( liis lİK'.sis, cl('aii and <‘|)i-grovvn Si(üü 1 )(2 x I) suriacc's ai(' aııalysc'd by Scanning 'I'nnnc'ling Micioscopy (S'l'M). 'I'lu' S'l'lM and IMlra High Vacuum SysicMii (UH V) in which thc' microscope is installed, are dc'scrihed. A brief history of the studic's on the' rc'coristruction and ruudamental leaturc's of the Si(OOl) surface is also given, f'irst, the sample and tip |)rc'paration technicpies were optimized. Sample prc'paration method, which inclndc;s both e.v situ chemical and in situ heating clc'aning procedures, was found not to give routinely the clc'an and atomically flat surfaces, because of the criticality of the' temperature values used during heat treatments. The monoatomic steps, dimcM' rows, delects such as missing dimer and dimer groups, were observed on clc'aii Si(OOl) surfaces. Double height step formation due to contamination was also detc'cted on a few sa.m|)l('s. Buckling of dimers which is bcdievcxl to bc' due mainly to either the high dc'fect density or tip-surface interaction, was observeebon one sample. Si and Ce were grown epita.xially on the silicon substrate, with 0.1 I ML and 0.2 ML coverages, respectively. 'Flie Si growth on Si(OOl) was found to occur as island lomiation because of the low substrate teruperature (~ .’lOO °('). Strong shape anisotropy and diilusional anistropy in the grovvtii have been observed. On tlie otiu'r hand, th(‘ large coverage of Ce on Si(OOl) at a relativ('ly high substrate t('m|)('ra.tui(' ( ~ hOO °('), ar(' r('sult('d in step How growth ratlu'r than individual island rormatioii on the t('irac('s.Özer, H ÖzgürM.S

Noncontact lateral-force gradient measurement on Si(111)-7×7 surface with small-amplitude off-resonance atomic force microscopy

In this work, the authors report on a quantitative investigation of lateral-force gradient and lateral force between a tungsten tip and Si(111)-(7×7) surface using combined noncontact lateral-force microscopy and scanning tunneling microscopy. Simultaneous lateral-force gradient and scanning tunneling microscopy images of single and multiatomic step are obtained. In our measurement, tunnel current is used as feedback. The lateral-stiffness contrast has been observed to be 2.5 N/m at a single atomic step, in contrast to 13 N/m at a multiatomic step on Si (111) surface. They also carried out a series of lateral stiffness-distance spectroscopy, which show a sharp increase in tip-surface interaction stiffness as the sample is approached toward the surface

Densification of polymer glass film under combined high pressure and shear flow revealed via scanning X-ray microscopy

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Energy dissipation in atomic force microscopy and atomic loss processes

Atomic scale dissipation is of great interest in nanomechanics and atomic manipulation. We present dissipation measurements with a linearized, ultrasmall amplitude atomic force microscope which is capable of measuring dissipation at chosen, fixed separations. We show that the dynamic dissipation in the noncontact regime is of the order of a few 10–100 meV per cycle. This dissipation is likely due to the motion of a bistable atomic defect in the tip-surface region. In the contact regime we observe dc hysteresis associated with nanoscale plasticity. We find the hysteretic energy loss to be 1 order of magnitude higher for a silicon surface than for copper

Direct measurement of molecular stiffness and damping in confined water layers

We present {\em direct} and {\em linear} measurements of the normal stiffness and damping of a confined, few molecule thick water layer. The measurements were obtained by use of a small amplitude (0.36 $\textrm{\AA}$), off-resonance Atomic Force Microscopy (AFM) technique. We measured stiffness and damping oscillations revealing up to 7 layers separated by 2.56 $\pm$ 0.20 $\textrm{\AA}$. Relaxation times could also be calculated and were found to indicate a significant slow-down of the dynamics of the system as the confining separation was reduced. We found that the dynamics of the system is determined not only by the interfacial pressure, but more significantly by solvation effects which depend on the exact separation of tip and surface. Thus ` solidification\rq seems to not be merely a result of pressure and confinement, but depends strongly on how commensurate the confining cavity is with the molecule size. We were able to model the results by starting from the simple assumption that the relaxation time depends linearly on the film stiffness.Comment: 7 pages, 6 figures, will be submitted to PR

Direct measurement of interatomic force gradients using an ultra-low-amplitude atomic force microscope

Interatomic force gradients between a W tip and a 7 × 7 reconstructed Si(111) surface were measured using an off-resonance, ultra-low-amplitude atomic force microscope (AFM) technique. The amplitudes used were less than 1 Å (peak-to-peak), which allowed direct measurement of the interaction force gradients as a function of separation. The force gradient curves are shown to consist of an attractive van der Waals part and short-range attractive and repulsive interactions. The van der Waals background can be subtracted, leaving a short-range interaction with an energy parameter of 1.9-3.4 eV and an interaction length-scale of 0.54-1.26 Å, characteristic of a single atomic bond. This correlates well with our observation of single-atom resolved force gradient images. In general, the interaction is reversible up to the zero intercept of the force gradient (inflection point of the energy). Beyond this point hysteresis tends to be observed and the onset of inelastic deformation can be clearly discerned. An analysis of the atomic scale contact gives reasonable values for the interfacial energy, yield strength, and the energy per atom needed to initiate plastic deformation

Distribution of shallow NV centers in diamond revealed by photoluminescence spectroscopy and nanomachining

We performed nanomachining combined with photoluminescence spectroscopy to understand the depth distribution of nitrogen-vacancy (NV) centers formed by low energy nitrogen ion irradiation of the diamond surface. NV− and NV0 fluorescence signals collected from the surface progressively machined by a diamond tip in an atomic force microscope (AFM) initially rise to a maximum at 5 nm depth before returning to background levels at 10 nm. This maximum corresponds to the defect depth distribution predicted by a SRIM simulation using a 2.5 keV implantation energy per nitrogen atom. Full extinguishing of implantation produced NV− and NV0 zero phonon line peaks occurred beyond 10 nm machining depth, coinciding with the end of easy surface material removal and onset of significant tip wear. The wear ratio of for NV active, ion irradiated diamond compared to the single-crystal diamond tip was surprisingly found to be 22:1. The reported results constitute the first integrated study of in-situ machining and wear characterization via optical properties of the diamond surface containing shallow formed NV centers. We discuss possible metrology applications for diamond tools used in precision manufacturing

Measurement of energy dissipation between tungsten tip and Si(1 0 0)-( 2 × 1 ) using sub-Ångström oscillation amplitude non-contact atomic force microscope

Energy dissipation plays an important role in non-contact atomic force microscopy (nc-AFM), atomic manipulation and friction. In this work, we studied atomic scale energy dissipation between a tungsten tip and Si(1 0 0)-(2×1) surface. Dissipation measurements are performed with a high sensitivity nc-AFM using sub-Ångström oscillation amplitudes below resonance. We observed an increase in the dissipation as the tip is approached closer to the surface, followed by an unexpected decrease as we pass the inflection point in the energy–distance curve. This dissipation is most probably due to transformation of the kinetic energy of the tip into phonons and heat

Ultra-small oscillation amplitude nc-AFM/STM imaging, force and dissipation spectroscopy of Si(100)(2 × 1)

Si(100)(2 × 1) surface is imaged using a new nc-AFM (non-contact atomic force microscopy)/STM with sub-Ångstrom oscillation amplitudes using stiff hand-made tungsten levers. Simultaneous force gradient and scanning tunneling microscopy images of individual dimers and atomic scale defects are obtained. We measured force-distance and dissipation-distance curves with different tips. Some of the tips show long-range force interactions, whereas some others resolve short-range interatomic force interactions. We observed that the tips showing short-range force interaction give atomic resolution in force gradient scans. This result suggests that short-range force interactions are responsible for atomic resolution in nc-AFM. We also observed an increase in the dissipation as the tip is approached closer to the surface, followed by an unexpected decrease as we pass the inflection point in the energy-distance curve. © 2002 Elsevier Science Ltd. All rights reserved

Investigation of CVD graphene as-grown on Cu foil using simultaneous scanning tunneling/atomic force microscopy

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) images of graphene reveal either a triangular or honeycomb pattern at the atomic scale depending on the imaging parameters. The triangular patterns at the atomic scale are particularly difficult to interpret, as the maxima in the images could be every other carbon atom in the six-fold hexagonal array or even a hollow site. Carbon sites exhibit an inequivalent electronic structure in HOPG or multilayer graphene due to the presence of a carbon atom or a hollow site underneath. In this work, we report small-amplitude, simultaneous STM/AFM imaging using a metallic (tungsten) tip, of the graphene surface as-grown by chemical vapor deposition (CVD) on Cu foils. Truly simultaneous operation is possible only with the use of small oscillation amplitudes. Under a typical STM imaging regime the force interaction is found to be repulsive. Force–distance spectroscopy revealed a maximum attractive force of about 7 nN between the tip and carbon/hollow sites. We obtained different contrast between force and STM topography images for atomic features. A honeycomb pattern showing all six carbon atoms is revealed in AFM images. In one contrast type, simultaneously acquired STM topography revealed hollow sites to be brighter. In another, a triangular array with maxima located in between the two carbon atoms was acquired in STM topography