Ankara : Department of Physics and the Institute of Engineering and Science of Bilkent University, 1996.Thesis (Master's) -- Bilkent University, 1996.Includes bibliographical references leaves 60-65.III ( liis lİK'.sis, cl('aii and <‘|)i-grovvn Si(üü 1 )(2 x I) suriacc's ai(' aııalysc'd by
Scanning 'I'nnnc'ling Micioscopy (S'l'M). 'I'lu' S'l'lM and IMlra High Vacuum
SysicMii (UH V) in which thc' microscope is installed, are dc'scrihed. A brief history
of the studic's on the' rc'coristruction and ruudamental leaturc's of the Si(OOl)
surface is also given, f'irst, the sample and tip |)rc'paration technicpies were
optimized. Sample prc'paration method, which inclndc;s both e.v situ chemical
and in situ heating clc'aning procedures, was found not to give routinely the
clc'an and atomically flat surfaces, because of the criticality of the' temperature
values used during heat treatments. The monoatomic steps, dimcM' rows, delects
such as missing dimer and dimer groups, were observed on clc'aii Si(OOl) surfaces.
Double height step formation due to contamination was also detc'cted on a few
sa.m|)l('s. Buckling of dimers which is bcdievcxl to bc' due mainly to either the
high dc'fect density or tip-surface interaction, was observeebon one sample. Si
and Ce were grown epita.xially on the silicon substrate, with 0.1 I ML and 0.2 ML
coverages, respectively. 'Flie Si growth on Si(OOl) was found to occur as island lomiation because of the low substrate teruperature (~ .’lOO °('). Strong shape
anisotropy and diilusional anistropy in the grovvtii have been observed. On tlie
otiu'r hand, th(‘ large coverage of Ce on Si(OOl) at a relativ('ly high substrate
t('m|)('ra.tui(' ( ~ hOO °('), ar(' r('sult('d in step How growth ratlu'r than individual
island rormatioii on the t('irac('s.Özer, H ÖzgürM.S
