Plasmonic backcontact grating for P3HT:PCBM organic solar cells enabling strong optical absorption increased in all polarizations

Cataloged from PDF version of article.In P3HT:PCBM based organic solar cells we propose and demonstrate numerically plasmonic backcontact grating architectures for strong optical absorption enhanced in both transverse-magnetic and transverse-electric polarizations. Even when the active material is partially replaced by the metallic grating (without increasing the active layer film thickness), we show computationally that the light absorption in thin-film P3HT:PCBM is increased by a maximum factor of similar to 21% considering both polarizations under AM1.5G solar radiation and over a half-maximum incidence angle of 45 degrees (where the enhancement drops to its half) compared to the same cell without a grating. This backcontact grating outperforms the typical plasmonic grating placed in PEDOT:PSS layer. (C)2011 Optical Society of America

Volumetric plasmonic resonator architecture for thin-film solar cells

Cataloged from PDF version of article.We propose and demonstrate a design concept of volumetric plasmonic resonators that relies on the idea of incorporating coupled layers of plasmonic structures embedded into a solar cell in enhanced optical absorption for surface-normal and off-axis angle configurations, beyond the enhancement limit of individual plasmonic layers. For a proof-of-concept demonstration in a thin-film organic solar cell that uses absorbing materials of copper phthalocyanine/perylene tetracarboxylic bisbenzimidazole, we couple two silver grating layers such that the field localization is further extended within the volume of active layers. Our computational results show a maximum optical absorption enhancement level of similar to 67% under air mass 1.5 global illumination considering both polarizations. (C) 2011 American Institute of Physics

Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Cataloged from PDF version of article.Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 107 cm−2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal–semiconductor–metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI

Superhydrophobic and Omnidirectional Antifreflective Surfaces from Nanostructured Ormosil Colloids

Cataloged from PDF version of article.A large-area superhydrophobic and omnidirectional antireflective nanostructured organically modified silica coating has been designed and prepared. The coating mimics the self-cleaning property of superhydrophobic lotus leaves and omnidirectional broad band antireflectivity of moth compound eyes, simultaneously. Water contact and sliding angles of the coating are around 160 and 10, respectively. Coating improves the transmittance of the glass substrate around 4%, when coated on a single side of a glass, in visible and near-infrared region at normal incidence angles. At oblique incidence angles (up to 60) improvement in transmission reaches to around 8%. In addition, coatings are mechanically stable against impact of water droplets from considerable heights. We believe that our inexpensive and durable multifunctional coatings are suitable for stepping out of the laboratory to practical outdoor applications

Amyloid-like peptide nanofiber templated titania nanostructures as dye sensitized solar cell anodic materials

Cataloged from PDF version of article.One-dimensional titania nanostructures can serve as a support for light absorbing molecules and result in an improvement in the short circuit current (Jsc) and open circuit voltage (Voc) as a nanostructured and high-surface-area material in dye-sensitized solar cells. Here, self-assembled amyloid-like peptide nanofibers were exploited as an organic template for the growth of one-dimensional titania nanostructures. Nanostructured titania layers were utilized as anodic materials in dye sensitized solar cells (DSSCs). The photovoltaic performance of the DSSC devices was assessed and an enhancement in the overall cell performance compared to unstructured titania was observed. © 2013 The Royal Society of Chemistry

Enhanced photoresponse of conformal TiO2/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition

Cataloged from PDF version of article.In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor nanorod (NR) arrays offer enhanced photoresponse compared to conventional planar thin-film counterparts. Silver (Ag) metallic NR arrays were deposited on Ag-film/Si templates by utilizing GLAD. Subsequently, titanium dioxide (TiO2) was deposited conformally on Ag NRs via ALD. Scanning electron microscopy studies confirmed the successful formation of vertically aligned Ag NRs deposited via GLAD and conformal deposition of TiO2 on Ag NRs via ALD. Following the growth of TiO2 on Ag NRs, aluminum metallic top contacts were formed to complete the fabrication of NR-based Schottky photodiodes. Nanostructured devices exhibited a photo response enhancement factor of 1.49 × 102 under a reverse bias of 3 V. © 2014 American Vacuum Societ

Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

Cataloged from PDF version of article.We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9-25.3, 5.45-34.8, 3.24-36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region. © 2012 Springer Science+Business Media B.V

Raman Enhancement on a Broadband Meta-Surface

Cataloged from PDF version of article.Plasmonic metamaterials allow confinement of light to deep subwavelength dimensions, while allowing for the tailoring of dispersion and electromagnetic mode density to enhance specific photonic properties. Optical resonances of plasmonic molecules have been extensively investigated; however, benefits of strong coupling of dimers have been overlooked. Here, we construct a plasmonic meta-surface through coupling of diatomic plasmonic molecules which contain a heavy and light meta-atom. Presence and coupling of two distinct types of localized modes in the plasmonic molecule allow formation and engineering of a rich band structure in a seemingly simple and common geometry, resulting in a broadband and quasi-omni-directional meta-surface. Surface-enhanced Raman scattering benefits from the simultaneous presence of plasmonic resonances at the excitation and scattering frequencies, and by proper design of the band structure to satisfy this condition, highly repeatable and spatially uniform Raman enhancement is demonstrated. On the basis of calculations of the field enhancement distribution within a unit cell, spatial uniformity of the enhancement at the nanoscale is discussed. Raman scattering constitutes an example of nonlinear optical processes, where the wavelength conversion during scattering may be viewed as a photonic transition between the bands of the meta-material

Structural and microstructural phase evolution during mechano-synthesis of nanocrystalline/amorphous CyAlMn alloy powders

Cataloged from PDF version of article.The formation mechanism of Cu-11.5Al-4Mn alloys by mechanical alloying (MA) of pure elemental powders was investigated. During milling, the powder sampling was conducted at predetermined intervals from 1 h to 96 h. The quantitative phase analyses were done by X-ray diffraction and the particles size and morphology were studied by scanning electron microscopy. Furthermore, the microstructure investigation and phase identification were done by transmission electron microscopy. Concerning the results, the nanocrystalline Cu solid solution were formed at short milling times and, by milling evolution, the austenite-to-martensite (2H) phase transformation occurred. Moreover, the formation of considerable amount of amorphous phase and its partial transformation to crystalline phases during the milling process were revealed. It was also found that, by milling development, the powder morphology changes from lamellar to semi-spherical and their size initially increases, then reduces and afterward re-increases. (C) 2013 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserve

Low temperature atomic layer deposited ZnO photo thin film transistors

Cataloged from PDF version of article.ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society