2,694 research outputs found

    Infrared light emission from atomic point contacts

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    Gold atomic point contacts are prototype systems to evidence ballistic electron transport. The typical dimension of the nanojunction being smaller than the electron-phonon interaction length, even at room temperature, electrons transfer their excess energy to the lattice only far from the contact. At the contact however, favored by huge current densities, electron-electron interactions result in a nano hot electron gas acting as a source of photons. Using a home built Mechanically Controlled Break Junction, it is reported here, for the first time, that this hot electron gas also radiates in the infrared range (0.2eV to 1.2eV). Moreover, in agreement with the pioneering work of Tomchuk, we show that this radiation is compatible with a blackbody like spectrum emitted from an electron gas at temperatures of several thousands of Kelvin given by (kB.Te)2=α.I.V(kB.Te)^2 = \alpha. I.V where α\alpha, II and VV are respectively a fitting parameter, the current flowing and the applied bias.Comment: 13 pages, 5 figure

    Estimating single molecule conductance from spontaneous evolution of a molecular contact

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    We present an original method to estimate the conductivity of a single molecule anchored to nanometric-sized metallic electrodes, using a Mechanically Controlled Break Junction (MCBJ) operated at room temperature in liquid. We record the conductance through the metal / molecules / metal nanocontact while keeping the metallic electrodes at a fixed distance. Taking advantage of thermal diffusion and electromigration, we let the contact naturally explore the more stable configurations around a chosen conductance value. The conductance of a single molecule is estimated from a statistical analysis of raw conductance and conductance standard deviation data for molecular contacts containing up to 14 molecules. The single molecule conductance values are interpreted as time-averaged conductance of an ensemble of conformers at thermal equilibrium.Comment: 25 pages, 6 figure

    Strain dependence of bonding and hybridization across the metal-insulator transition of VO2

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    Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly strong dependence on strain that is not predicted by band theory, emphasizing the relevance of the O ion to the physics of VO2

    Two types of all-optical magnetization switching mechanisms using femtosecond laser pulses

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    Magnetization manipulation in the absence of an external magnetic field is a topic of great interest, since many novel physical phenomena need to be understood and promising new applications can be imagined. Cutting-edge experiments have shown the capability to switch the magnetization of magnetic thin films using ultrashort polarized laser pulses. In 2007, it was first observed that the magnetization switching for GdFeCo alloy thin films was helicity-dependent and later helicity-independent switching was also demonstrated on the same material. Recently, all-optical switching has also been discovered for a much larger variety of magnetic materials (ferrimagnetic, ferromagnetic films and granular nanostructures), where the theoretical models explaining the switching in GdFeCo films do not appear to apply, thus questioning the uniqueness of the microscopic origin of all-optical switching. Here, we show that two different all-optical switching mechanisms can be distinguished; a "single pulse" switching and a "cumulative" switching process whose rich microscopic origin is discussed. We demonstrate that the latter is a two-step mechanism; a heat-driven demagnetization followed by a helicity-dependent remagnetization. This is achieved by an all-electrical and time-dependent investigation of the all-optical switching in ferrimagnetic and ferromagnetic Hall crosses via the anomalous Hall effect, enabling to probe the all-optical switching on different timescales.Comment: 1 page, LaTeX; classified reference number

    Entrainment rates and microphysics in POST stratocumulus

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    The article of record as published may be located at http://dx.doi.org/10.1002/jgrd.50878An aircraft field study (POST; Physics of Stratocumulus Top) was conducted off the central California coast in July and August 2008 to deal with the known difficulty of measuring entrainment rates in the radiatively important stratocumulus (Sc) prevalent in that area. The Center for Interdisciplinary Remotely-Piloted Aircraft Studies Twin Otter research aircraft flew 15 quasi-Lagrangian flights in unbroken Sc and carried a full complement of probes including three high-data-rate probes: ultrafast temperature probe, particulate volume monitor probe, and gust probe. The probes’ colocation near the nose of the Twin Otter permitted estimation of entrainment fluxes and rates with an in-cloud resolution of 1m. Results include the following: Application of the conditional sampling variation of classical mixed layer theory for calculating the entrainment rate into cloud top for POST flights is shown to be inadequate for most of the Sc. Estimated rates resemble previous results after theory is modified to take into account both entrainment and evaporation at cloud top given the strong wind shear and mixing at cloud top. Entrainment rates show a tendency to decrease for large shear values, and the largest rates are for the smallest temperature jumps across the inversion. Measurements indirectly suggest that entrained parcels are primarily cooled by infrared flux divergence rather than cooling from droplet evaporation, while detrainment at cloud top causes droplet evaporation and cooling in the entrainment interface layer above cloud top.NSF supported H. Gerber, G. Frick, and S. Malinowski (ATM-0735121, AGS-1020445), D. Khelif (ATM-0734323), and S. Krueger (ATM-0735118). The Office of Naval Research and the Naval Postgraduate School supported in part the deployment of the Twin Otter aircraft

    Spin relaxation of conduction electrons in bulk III-V semiconductors

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    Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both nn- and pp-type. Relative importance of each spin relaxation mechanism is compared and the diagrams showing the dominant mechanism are constructed as a function of temperature and impurity concentrations. Our approach is based upon theoretical calculation of the momentum relaxation rate and allows understanding of the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.Comment: an error in earlier version correcte

    Impurity and strain effects on the magnetotransport of La1.85Sr0.15Cu(1-y)Zn(y)O4 films

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    The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant term in the temperature dependence of cotangent theta but the strain affects both the slope and the constant term, while their ratio remains constant.OMR is decreased by zinc doping but is unaffected by strain. The ratio delta rho/(rho*tan^2 theta) is T-independent but decreases with impurity doping. These results put strong constraints on theories of the normal state of high- temperature superconductors

    About the maximal rank of 3-tensors over the real and the complex number field

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    High dimensional array data, tensor data, is becoming important in recent days. Then maximal rank of tensors is important in theory and applications. In this paper we consider the maximal rank of 3 tensors. It can be attacked from various viewpoints, however, we trace the method of Atkinson-Stephens(1979) and Atkinson-Lloyd(1980). They treated the problem in the complex field, and we will present various bounds over the real field by proving several lemmas and propositions, which is real counterparts of their results.Comment: 13 pages, no figure v2: correction and improvemen

    Anomalous f-electron Hall Effect in the Heavy-Fermion System CeTIn5_{5} (T = Co, Ir, or Rh)

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    The in-plane Hall coefficient RH(T)R_{H}(T) of CeRhIn5_{5}, CeIrIn5_{5}, and CeCoIn5_{5} and their respective non-magnetic lanthanum analogs are reported in fields to 90 kOe and at temperatures from 2 K to 325 K. RH(T)R_{H}(T) is negative, field-independent, and dominated by skew-scattering above \sim 50 K in the Ce compounds. RH(H0)R_{H}(H \to 0) becomes increasingly negative below 50 K and varies with temperature in a manner that is inconsistent with skew scattering. Field-dependent measurements show that the low-T anomaly is strongly suppressed when the applied field is increased to 90 kOe. Measurements on LaRhIn5_{5}, LaIrIn5_{5}, and LaCoIn5_{5} indicate that the same anomalous temperature dependence is present in the Hall coefficient of these non-magnetic analogs, albeit with a reduced amplitude and no field dependence. Hall angle (θH\theta_{H}) measurements find that the ratio ρxx/ρxy=cot(θH)\rho_{xx}/\rho_{xy}=\cot(\theta_{H}) varies as T2T^{2} below 20 K for all three Ce-115 compounds. The Hall angle of the La-115 compounds follow this T-dependence as well. These data suggest that the electronic-structure contribution dominates the Hall effect in the 115 compounds, with ff-electron and Kondo interactions acting to magnify the influence of the underlying complex band structure. This is in stark contrast to the situation in most 4f4f and 5f5f heavy-fermion compounds where the normal carrier contribution to the Hall effect provides only a small, T-independent background to RH.R_{H}.Comment: 23 pages and 8 figure
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