Monte Carlo study of Si(111) homoepitaxy

An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.Comment: 4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures

Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8x2) periodicity.Comment: 14 pages, 4 figures, 1 tabl

Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model

Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers hindering attachment of material to existing islands on the density and size distribution of islands in a model of homoepitaxial growth on Si(111)7x7 reconstructed surface. An unusual distribution of island sizes peaked around "magic" sizes and a steep dependence of the island density on the growth rate are observed. "Magic" islands (of a different shape as compared to those obtained during growth) are observed also during surface equilibration.Comment: 4 pages including 5 figures, REVTeX, submitted to Physical Review

Diffusion of hydrogen in crystalline silicon

The coefficient of diffusion of hydrogen in crystalline silicon is calculated using tight-binding molecular dynamics. Our results are in good quantitative agreement with an earlier study by Panzarini and Colombo [Phys. Rev. Lett. 73, 1636 (1994)]. However, while our calculations indicate that long jumps dominate over single hops at high temperatures, no abrupt change in the diffusion coefficient can be observed with decreasing temperature. The (classical) Arrhenius diffusion parameters, as a consequence, should extrapolate to low temperatures.Comment: 4 pages, including 5 postscript figures; submitted to Phys. Rev. B Brief Repor

Status and overview of development of the Silicon Pixel Detector for the PHENIX experiment at the BNL RHIC

We have developed a silicon pixel detector to enhance the physics capabilities of the PHENIX experiment. This detector, consisting of two layers of sensors, will be installed around the beam pipe at the collision point and covers a pseudo-rapidity of | \eta | < 1.2 and an azimuth angle of | \phi | ~ 2{\pi}. The detector uses 200 um thick silicon sensors and readout chips developed for the ALICE experiment. In order to meet the PHENIX DAQ readout requirements, it is necessary to read out 4 readout chips in parallel. The physics goals of PHENIX require that radiation thickness of the detector be minimized. To meet these criteria, the detector has been designed and developed. In this paper, we report the current status of the development, especially the development of the low-mass readout bus and the front-end readout electronics.Comment: 9 pages, 8 figures and 1 table in DOCX (Word 2007); PIXEL 2008 workshop proceedings, will be published in the Proceedings Section of JINST(Journal of Instrumentation

Changing shapes in the nanoworld

What are the mechanisms leading to the shape relaxation of three dimensional crystallites ? Kinetic Monte Carlo simulations of fcc clusters show that the usual theories of equilibration, via atomic surface diffusion driven by curvature, are verified only at high temperatures. Below the roughening temperature, the relaxation is much slower, kinetics being governed by the nucleation of a critical germ on a facet. We show that the energy barrier for this step linearly increases with the size of the crystallite, leading to an exponential dependence of the relaxation time.Comment: 4 pages, 5 figures. Accepted by Phys Rev Let

Sector logic implementation for the ATLAS endcap level-1 muon trigger

We present development of the Sector Logic for the ATLAS endcap Level-1 (LVL1) muon trigger. The muon tracks from the interaction point (IP) are bent by the magnetic fields induced by the ATLAS toroidal magnets. The Sector Logic reconstructs three dimensional muon tracks with six levels of transverse momentum (pT) by combining two sets (R-Z and φ-Z) of information from the Thin Gap Chamber (TGC) detectors. Then, it selects two highest pT tracks in each trigger sector. The Sector Logic module is designed in pipelined structure to achieve no-dead-time operation and shorter latency. Look-Up-Tables (LUTs) are used so that any pT threshold level can be set. To achieve these, we adopted SRAM embedded type FPGA devices. The design and its performance are given in this presentation