Proof of the cases p≤7p \leq 7 of the Lieb-Seiringer formulation of the Bessis-Moussa-Villani conjecture

It is shown that the polynomial $\lambda(t) = {\rm Tr}[(A + tB)^p]$ has nonnegative coefficients when $p \leq 7$ and A and B are any two complex positive semidefinite $n \times n$ matrices with arbitrary $n$. This proofs a general nontrivial case of the Lieb-Seiringer formulation of the Bessis-Moussa-Villani conjecture which is a long standing problem in theoretical physics.Comment: 5 pages; typos corrected; accepted for publication in Journal of Statistical Physic

Transient terahertz spectroscopy of excitons and unbound carriers in quasi two-dimensional electron-hole gases

We report a comprehensive experimental study and detailed model analysis of the terahertz dielectric response and density kinetics of excitons and unbound electron-hole pairs in GaAs quantum wells. A compact expression is given, in absolute units, for the complex-valued terahertz dielectric function of intra-excitonic transitions between the 1s and higher-energy exciton and continuum levels. It closely describes the terahertz spectra of resonantly generated excitons. Exciton ionization and formation are further explored, where the terahertz response exhibits both intra-excitonic and Drude features. Utilizing a two-component dielectric function, we derive the underlying exciton and unbound pair densities. In the ionized state, excellent agreement is found with the Saha thermodynamic equilibrium, which provides experimental verification of the two-component analysis and density scaling. During exciton formation, in turn, the pair kinetics is quantitatively described by a Saha equilibrium that follows the carrier cooling dynamics. The terahertz-derived kinetics is, moreover, consistent with time-resolved luminescence measured for comparison. Our study establishes a basis for tracking pair densities via transient terahertz spectroscopy of photoexcited quasi-two-dimensional electron-hole gases.Comment: 14 pages, 8 figures, final versio

Electron spin orientation under in-plane optical excitation in GaAs quantum wells

We study the optical orientation of electron spins in GaAs/AlGaAs quantum wells for excitation in the growth direction and for in-plane excitation. Time- and polarization-resolved photoluminescence excitation measurements show, for resonant excitation of the heavy-hole conduction band transition, a negligible degree of electron spin polarization for in-plane excitation and nearly 100% for excitation in the growth direction. For resonant excitation of the light-hole conduction band transition, the excited electron spin polarization has the same (opposite) direction for in-plane excitation (in the growth direction) as for excitation into the continuum. The experimental results are well explained by an accurate multiband theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling.Comment: 10 pages, 4 figures, final versio

Ultrafast pump-probe dynamics in ZnSe-based semiconductor quantum-wells

Pump-probe experiments are used as a controllable way to investigate the properties of photoexcited semiconductors, in particular, the absorption saturation. We present an experiment-theory comparison for ZnSe quantum wells, investigating the energy renormalization and bleaching of the excitonic resonances. Experiments were performed with spin-selective excitation and above-bandgap pumping. The model, based on the semiconductor Bloch equations in the screened Hartree-Fock approximation, takes various scattering processes into account phenomenologically. Comparing numerical results with available experimental data, we explain the experimental results and find that the electron spin-flip occurs on a time scale of 30 ps.Comment: 10 pages, 9 figures. Key words: nonlinear and ultrafast optics, modeling of femtosecond pump-probe experiments, electron spin-flip tim

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor

We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.Comment: Revtex, 4 pages, 3 figures (eps), Definition of spin pilarization changed to standard definition in GMR, some straight forward algebra removed. To appear as PRB Rap. Comm. August 15t

Rashba precession in quantum wires with interaction

Rashba precession of spins moving along a one-dimensional quantum channel is calculated, accounting for Coulomb interactions. The Tomonaga--Luttinger model is formulated in the presence of spin-orbit scattering and solved by Bosonization. Increasing interaction strength at decreasing carrier density is found to {\sl enhance} spin precession and the nominal Rashba parameter due to the decreasing spin velocity compared with the Fermi velocity. This result can elucidate the observed pronounced changes of the spin splitting on applied gate voltages which are estimated to influence the interface electric field in heterostructures only little.Comment: now replaced by published versio

Spin-polarized transport and Andreev reflection in semiconductor/superconductor hybrid structures

We show that spin-polarized electron transmission across semiconductor/superconductor (Sm/S) hybrid structures depends sensitively on the degree of spin polarization as well as the strengths of potential and spin-flip scattering at the interface. We demonstrate that increasing the Fermi velocity mismatch in the Sm and S regions can lead to enhanced junction transparency in the presence of spin polarization. We find that the Andreev reflection amplitude at the superconducting gap energy is a robust measure of the spin polarization magnitude, being independent of the strengths of potential and spin-flip scattering and the Fermi velocity of the superconductor.Comment: 4 pages, 2 figure

Eliminating Error in the Chemical Abundance Scale for Extragalactic HII Regions

In an attempt to remove the systematic errors which have plagued the calibration of the HII region abundance sequence, we have theoretically modeled the extragalactic HII region sequence. We then used the theoretical spectra so generated in a double blind experiment to recover the chemical abundances using both the classical electron temperature + ionization correction factor technique, and the technique which depends on the use of strong emission lines (SELs) in the nebular spectrum to estimate the abundance of oxygen. We find a number of systematic trends, and we provide correction formulae which should remove systematic errors in the electron temperature + ionization correction factor technique. We also provide a critical evaluation of the various semi-empirical SEL techniques. Finally, we offer a scheme which should help to eliminate systematic errors in the SEL-derived chemical abundance scale for extragalactic HII regions.Comment: 24 pages, 9 Tables, 13 figures, accepted for publication in MNRAS. Updated considering minor changes during the final edition process and some few missing reference

Photo-Induced Spin Dynamics in Semiconductor Quantum Wells

We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (PPL) with and without magnetic field is studied. ThePPLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,PPLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field