Joined optical and thermal characterization of a III-nitride semiconductor membrane by micro-photoluminescence spectroscopy and Raman thermometry

We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($\mu$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $\kappa$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different contributions to thermal transport given by, e.g., excitons, charge carriers, and heat carrying phonons. Further complication is given by the fact that this membrane is made from direct bandgap semiconductors, designed to emit light based on an In$_{x}$Ga$_{1-x}$N ($x=0.15$) quantum well embedded in GaN. To meet these challenges, we designed a novel experimental setup that enables the necessary optical and thermal characterizations in parallel. We perform micro-Raman thermometry, either based on a heating laser that acts as a probe laser (1-laser Raman thermometry), or based on two lasers, providing the heating and the temperature probe separately (2-laser Raman thermometry). For the latter technique, we obtain temperature maps over tens of micrometers with a spatial resolution less than $1\,\mu\text{m}$, yielding $\kappa\,=\,95^{+11}_{-7}\,\frac{\text{W}}{\text{m}\cdot \text{K}}$ for the $\textit{c}$-plane of our $\approx\,250\text{-nm}$-thick membrane at around room temperature, which compares well to our $\textit{ab initio}$ calculations applied to a simplified structure. Based on these calculations, we explain the particular relevance of the temperature probe volume, as quasi-ballistic transport of heat-carrying phonons occurs on length scales beyond the penetration depths of the heating laser and even its focus spot radius. The present work represents a significant step towards non-invasive, highly spatially resolved, and still quantitative thermometry performed on a photonic membrane.Comment: 28 pages, 14 figures, and Supplemental Materia

Nitric Oxide Induces Cell Death by Regulating Anti-Apoptotic BCL-2 Family Members

Nitric oxide (NO) activates the intrinsic apoptotic pathway to induce cell death. However, the mechanism by which this pathway is activated in cells exposed to NO is not known. Here we report that BAX and BAK are activated by NO and that cytochrome c is released from the mitochondria. Cells deficient in Bax and Bak or Caspase-9 are completely protected from NO-induced cell death. The individual loss of the BH3-only proteins, Bim, Bid, Puma, Bad or Noxa, or Bid knockdown in Bim−/−/Puma−/− MEFs, does not prevent NO-induced cell death. Our data show that the anti-apoptotic protein MCL-1 undergoes ASK1-JNK1 mediated degradation upon exposure to NO, and that cells deficient in either Ask1 or Jnk1 are protected against NO-induced cell death. NO can inhibit the mitochondrial electron transport chain resulting in an increase in superoxide generation and peroxynitrite formation. However, scavengers of ROS or peroxynitrite do not prevent NO-induced cell death. Collectively, these data indicate that NO degrades MCL-1 through the ASK1-JNK1 axis to induce BAX/BAK-dependent cell death

How to verify the precision of density-functional-theory implementations via reproducible and universal workflows

In the past decades many density-functional theory methods and codes adopting periodic boundary conditions have been developed and are now extensively used in condensed matter physics and materials science research. Only in 2016, however, their precision (i.e., to which extent properties computed with different codes agree among each other) was systematically assessed on elemental crystals: a first crucial step to evaluate the reliability of such computations. We discuss here general recommendations for verification studies aiming at further testing precision and transferability of density-functional-theory computational approaches and codes. We illustrate such recommendations using a greatly expanded protocol covering the whole periodic table from Z=1 to 96 and characterizing 10 prototypical cubic compounds for each element: 4 unaries and 6 oxides, spanning a wide range of coordination numbers and oxidation states. The primary outcome is a reference dataset of 960 equations of state cross-checked between two all-electron codes, then used to verify and improve nine pseudopotential-based approaches. Such effort is facilitated by deploying AiiDA common workflows that perform automatic input parameter selection, provide identical input/output interfaces across codes, and ensure full reproducibility. Finally, we discuss the extent to which the current results for total energies can be reused for different goals (e.g., obtaining formation energies).Comment: Main text: 23 pages, 4 figures. Supplementary: 68 page

Visible spectrum quantum light sources based on InxGa1–xN/GaN Quantum Dots

We present a method for designing quantum light sources, emitting in the visible band, using wurtzite InxGa1−xN quantum dots (QDs) in a GaN matrix. This system is significantly more versatile than previously proposed arsenide- and phosphide-based QDs, having a tuning range exceeding 1 eV. The quantum mechanical configuration interaction method, capturing the fermionic nature of electrons and associated quantum effects explicitly, is used to find shapes and compositions of dots to maximize the excitonic dipole matrix element and optimize the biexciton binding energy. These results provide QD morphologies tailored for either bright single-photon emission or entangledphoton- pair emission at any given wavelength in the visible spectrum

Thermal Transport in c-plane GaN Membranes Characterized by Raman Thermometry

Excess heat often limits the lifetime or stability of semiconductor devices, like laser strcutures, e.g. by affecting the refractive index or defect formation. It is therefore vital to understand how thermal energy is dissipated from the active region. In this contribution, we analyze the in-plane thermal transport in GaN-based membranes which can be applied in UV-visible light emission. The temperature of the material is probed by the shift and width of Raman modes under heating with a UV laser. This method allows for a contactless characterization without the need for additional processing steps often needed for alternative thermometry. We find, that the thermal conductivity, κ, is significantly reduced compared to bulk GaN due to the finite thickness of the analyzed membranes. Phonon scattering due to roughness and porosity of the membrane is found to further reduce κ. Studying in-plane thermal transport lays the foundation for subsequent thermal studies on entire device structures; exploiting a subtle balance of in- and cross-plane thermal transport which could improve device designs

60 GHz Pulsradar zur Detektion von Hochspannungsleitungen Schlussbericht

With 39 figs.SIGLEDEGerman