The invasion of tobacco mosaic virus RNA induces endoplasmic reticulum stress-related autophagy in HeLa cells

The ability of human cells to defend against viruses originating from distant species has long been ignored. Owing to the pressure of natural evolution and human exploration, some of these viruses may be able to invade human beings. If their ‘fresh’ host had no defences, the viruses could cause a serious pandemic, as seen with HIV, SARS (severe acute respiratory syndrome) and avian influenza virus that originated from chimpanzees, the common palm civet and birds, respectively. It is unknown whether the human immune system could tolerate invasion with a plant virus. To model such an alien virus invasion, we chose TMV (tobacco mosaic virus) and used human epithelial carcinoma cells (HeLa cells) as its ‘fresh’ host. We established a reliable system for transfecting TMV-RNA into HeLa cells and found that TMV-RNA triggered autophagy in HeLa cells as shown by the appearance of autophagic vacuoles, the conversion of LC3-I (light chain protein 3-I) to LC3-II, the up-regulated expression of Beclin1 and the accumulation of TMV protein on autophagosomal membranes. We observed suspected TMV virions in HeLa cells by TEM (transmission electron microscopy). Furthermore, we found that TMV-RNA was translated into CP (coat protein) in the ER (endoplasmic reticulum) and that TMV-positive RNA translocated from the cytoplasm to the nucleolus. Finally, we detected greatly increased expression of GRP78 (78 kDa glucose-regulated protein), a typical marker of ERS (ER stress) and found that the formation of autophagosomes was closely related to the expanded ER membrane. Taken together, our data indicate that HeLa cells used ERS and ERS-related autophagy to defend against TMV-RNA

A Review on Rolling Bearing Fault Signal Detection Methods Based on Different Sensors

As a precision mechanical component to reduce friction between components, the rolling bearing is widely used in many fields because of its slight friction loss, strong bearing capacity, high precision, low power consumption, and high mechanical efficiency. This paper reviews several excellent kinds of study and their relevance to the fault detection of rolling bearings. We summarize the fault location, sensor types, bearing fault types, and fault signal analysis of rolling bearings. The fault signal types are divided into one-dimensional and two-dimensional images, which account for 40.14% and 31.69%, respectively, and their classification is clarified and discussed. We counted the proportions of various methods in the references cited in this paper. Among them, the method of one-dimensional signal detection with external sensors accounted for 3.52%, the method of one-dimensional signal detection with internal sensors accounted for 36.62%, and the method of two-dimensional signal detection with external sensors accounted for 19.72%. The method of two-dimensional signal detection with internal sensors accounted for 11.97%. Among these methods, the highest detection rate is 100%, and the lowest detection rate is more than 70%. The similarities between the different methods are compared. The research results summarized in this paper show that with the progress of the times, a variety of new and better research methods have emerged, which have sped up the detection and diagnosis of rolling bearing faults. For example, the technology using artificial intelligence is still developing rapidly, such as artificial neural networks, convolutional neural networks, and machine learning. Although there are still defects, such methods can quickly discover a fault and its cause, enrich the database, and accumulate experience. More and more advanced techniques are applied in this field, and the detection method has better robustness and superiority

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean square (RMS) roughness less than 0.2 nm were obtained on the epitaxial layer surface. The LMRs’ length is tens of millimeters, and the width is sub-millimeters. The step-flow growth induced by threading screw dislocations (TSDs) was observed on the epitaxial layer surface by atomic force microscopy (AFM), together with the double bi-atomic step-flow growth induced by the step bunch, which was the cause of LMRs. Furthermore, the growth mechanism was investigated by wet etching. The etching pits were found to be associated with 3C-SiC and their effect on the growth rate of epitaxial layers was further explored

Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor

We report the latest results of the3C-SiC layer growth on Si(100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system with a rotating susceptor that was designed to support up to three50 mm-diameter wafers.3C-SiC film properties of the intra-wafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity(σ/mean) of～3.40% and～5.37% have been achieved in the3×50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than4% and4.24%, respectively.?2011 Chinese Institute of Electronics

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean square (RMS) roughness less than 0.2 nm were obtained on the epitaxial layer surface. The LMRs’ length is tens of millimeters, and the width is sub-millimeters. The step-flow growth induced by threading screw dislocations (TSDs) was observed on the epitaxial layer surface by atomic force microscopy (AFM), together with the double bi-atomic step-flow growth induced by the step bunch, which was the cause of LMRs. Furthermore, the growth mechanism was investigated by wet etching. The etching pits were found to be associated with 3C-SiC and their effect on the growth rate of epitaxial layers was further explored

Icariin Ameliorates Lower Back Pain in Rats via Suppressing the Secretion of Cytokine-Induced Neutrophil Chemoatractant-1

Purpose. To investigate whether icariin (ICA), a well-known medicine extracted from the stem and leaf of Epimedium brevicornum Maxim, had analgesic effect on lower back pain (LBP) in rats. Methods. In a puncture-induced LBP rat model, the severity of LBP was quantified using the paw/foot withdrawal threshold method after intragastric administration of ICA at a dosage of 50 mg/kg/d or 100 mg/kg/d. The pain-related peptides of substance P (SP) and calcitonin gene-related peptide (CGRP) were also measured in intervertebral disc (IVD) tissue using RT-PCR after ICA treatment. In addition, the expression of cytokine-induced neutrophil chemoattractant-1 (CINC-1) in IVD was quantified using RT-PCR and ELISA examination. Results. ICA treatment resulted in a significant amelioration of mechanical allodynia in a dose-response manner, and the analgesic effect could last for two weeks even during the washout period. More importantly, the mechanism of analgesic pharmacological effect in ICA was to suppress the upregulated CINC-1, the homolog of IL-8 in rats, which is a crucial proalgesic factor contributing to LBP, in IVDs. Conclusion. ICA is a novel herbal extract to relieve LBP, and it may be a promising alternative pain killer in the future

Design and fabrication of ultra-wideband power amplifier based on GaN HEMT

The research of an ultra-broadband power amplifier based on TGF2023-2-02 GaN HEMT which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. The transistor of GaN HEMT is modeled and a frequency compensation and multi-side impedance matching approach are adopted for broadband impedance matching of amplifier. And a fan shaped micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 37 dBm output power with minimum small signal gain of 9.8 dB over 3–8 GHz. The saturated output power is 38.3 dBm under DC bias of Vds = 28 V, Vgs = ?2.75 V at the frequency of 5 GHz