380 research outputs found

    A lattice gas model of II-VI(001) semiconductor surfaces

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    We introduce an anisotropic two-dimensional lattice gas model of metal terminated II-IV(001) seminconductor surfaces. Important properties of this class of materials are represented by effective NN and NNN interactions, which result in the competition of two vacancy structures on the surface. We demonstrate that the experimentally observed c(2x2)-(2x1) transition of the CdTe(001) surface can be understood as a phase transition in thermal equilbrium. The model is studied by means of transfer matrix and Monte Carlo techniques. The analysis shows that the small energy difference of the competing reconstructions determines to a large extent the nature of the different phases. Possible implications for further experimental research are discussed.Comment: 7 pages, 2 figure

    ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties

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    We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside the simplest configurations with atomic interdiffusion we consider also some configurations characterized by As depletion and cation vacancies, motivated by the recent successfull growth of ZnSe/GaAs pseudomorphic structures with minimum stacking fault density characterized by the presence of a defected (Zn,Ga)Se alloy in the interface region. We find that--under particular thermodynamic conditions--some defected configurations are favoured with respect to undefected ones with simple anion or cation mixing, and that the calculated band offsets for some defected structures are compatible with those measured. Although it is not possible to extract indications about the precise interface composition and vacancy concentration, our results support the experimental indication of (Zn,Ga)Se defected compounds in high-quality ZnSe/GaAs(001) heterojunctions with low native stacking fault density. The range of measured band offset suggests that different atoms at interfaces rearrange, with possible presence of vacancies, in such a way that not only local charges but also ionic dipoles are vanishing.Comment: 26 pages. 5 figures, revised version, in press (Physical Review B

    Micro-spectroscopy on silicon wafers and solar cells

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    Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance) of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes

    Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy

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    We present a zinc-blende lattice gas model of II-VI(001) surfaces, which is investigated by means of Kinetic Monte Carlo (KMC) simulations. Anisotropic effective interactions between surface metal atoms allow for the description of, e.g., the sublimation of CdTe(001), including the reconstruction of Cd-terminated surfaces and its dependence on the substrate temperature T. Our model also includes Te-dimerization and the potential presence of excess Te in a reservoir of weakly bound atoms at the surface. We study the self-regulation of atomic layer epitaxy (ALE) and demonstrate how the interplay of the reservoir occupation with the surface kinetics results in two different regimes: at high T the growth rate is limited to 0.5 layers per ALE cycle, whereas at low enough T each cycle adds a complete layer of CdTe. The transition between the two regimes occurs at a characteristic temperature and its dependence on external parameters is studied. Comparing the temperature dependence of the ALE growth rate in our model with experimental results for CdTe we find qualitative agreement.Comment: 9 pages (REVTeX), 8 figures (EPS). Content revised, references added, typos correcte

    Enhancement and suppression effects resulting from information structuring in sentences

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    Information structuring through the use of cleft sentences increases the processing efficiency of references to elements within the scope of focus. Furthermore, there is evidence that putting certain types of emphasis on individual words not only enhances their subsequent processing, but also protects these words from becoming suppressed in the wake of subsequent information, suggesting mechanisms of enhancement and suppression. In Experiment 1, we showed that clefted constructions facilitate the integration of subsequent sentences that make reference to elements within the scope of focus, and that they decrease the efficiency with reference to elements outside of the scope of focus. In Experiment 2, using an auditory text-change-detection paradigm, we showed that focus has similar effects on the strength of memory representations. These results add to the evidence for enhancement and suppression as mechanisms of sentence processing and clarify that the effects occur within sentences having a marked focus structure

    Direct and indirect aboutness topics

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    We propose a definition of aboutness topicality that not only encompasses individual denoting DPs, but also indefinites. We concentrate on the interpretative effects of marking indefinites as topics: they either receive widest scope in their clause, or they are interpreted in the restrictor of an overt or covert Q-adverb. We show that in the first case they are direct aboutness topics insofar as they are the subject of a predication expressed by the comment, while in the second case they are indirect aboutness topics: they define the subject of a higher-order predication — namely the set of situations that the respective Q-adverb quantifies over
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