9 research outputs found

    Comprendre et maĂźtriser le passage de type I Ă  type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb

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    Les antimoniures sont des semi-conducteurs III-V prometteurs pour le dĂ©veloppement de dispositifs optoĂ©lectroniques puisqu'ils ont une grande mobilitĂ© d'Ă©lectrons, une large gamme spectrale d'Ă©mission ou de dĂ©tection et offrent la possibilitĂ© de former des hĂ©tĂ©rostructures confinĂ©es dont la recombinaison est de type I, II ou III. Bien qu'il existe plusieurs publications sur la fabrication de dispositifs utilisant un alliage d'In(x)Ga(1-x)As(y)Sb(1-y) qui Ă©met ou dĂ©tecte Ă  une certaine longueur d'onde, les dĂ©tails, Ă  savoir comment sont dĂ©terminĂ©s les compositions et surtout les alignements de bande, sont rarement explicites. TrĂšs peu d'Ă©tudes fondamentales sur l'incorporation d'indium et d'arsenic sous forme de tĂ©tramĂšres lors de l'Ă©pitaxie par jets molĂ©culaires existent, et les mĂ©thodes afin de dĂ©terminer l'alignement des bandes des binaires qui composent ces alliages donnent des rĂ©sultats variables. Un modĂšle a Ă©tĂ© construit et a permis de prĂ©dire l'alignement des bandes Ă©nergĂ©tiques des alliages d'In(x)Ga(1-x)As(y)Sb(1-y) avec celles du GaSb pour l'ensemble des compositions possibles. Ce modĂšle tient compte des effets thermiques, des contraintes Ă©lastiques et peut aussi inclure le confinement pour des puits quantiques. De cette maniĂšre, il est possible de prĂ©dire la transition de type de recombinaison en fonction de la composition. Il est aussi montrĂ© que l'indium sĂ©grĂšgue en surface lors de la croissance par Ă©pitaxie par jets molĂ©culaires d'In(x)Ga(1-x)Sb sur GaSb, ce qui avait dĂ©jĂ  Ă©tĂ© observĂ© pour ce type de matĂ©riau. Il est possible d'Ă©liminer le gradient de composition Ă  cette interface en mouillant la surface d'indium avant la croissance de l'alliage. L'Ă©paisseur d'indium en surface dĂ©pend de la tempĂ©rature et peut ĂȘtre Ă©valuĂ©e par un modĂšle simple simulant la sĂ©grĂ©gation. Dans le cas d'un puits quantique, il y aura une seconde interface GaSb sur In(x)Ga(1-x)Sb oĂč l'indium de surface ira s'incorporer. La croissance de quelques monocouches de GaSb Ă  basse tempĂ©rature immĂ©diatement aprĂšs la croissance de l'alliage permet d'incorporer rapidement ces atomes d'indium et de garder la seconde interface abrupte. Lorsque la composition d'indium ne change plus dans la couche, cette composition correspond au rapport de flux d'atomes d'indium sur celui des Ă©lĂ©ments III. L'arsenic, dont la source fournit principalement des tĂ©tramĂšres, ne s'incorpore pas de la mĂȘme maniĂšre. Les tĂ©tramĂšres occupent deux sites en surface et doivent interagir par paire afin de crĂ©er des dimĂšres d'arsenic. Ces derniers pourront alors ĂȘtre incorporĂ©s dans l'alliage. Un modĂšle de cinĂ©tique de surface a Ă©tĂ© Ă©laborĂ© afin de rendre compte de la diminution d'incorporation d'arsenic en augmentant le rapport V/III pour une composition nominale d'arsenic fixe dans l'In(x)Ga(1-x)As(y)Sb(1-y). Ce rĂ©sultat s'explique par le fait que les rĂ©actions de deuxiĂšme ordre dans la dĂ©composition des tĂ©tramĂšres d'arsenic ralentissent considĂ©rablement la rĂ©action d'incorporation et permettent Ă  l'antimoine d'occuper majoritairement la surface. Cette observation montre qu'il est prĂ©fĂ©rable d'utiliser une source de dimĂšres d'arsenic, plutĂŽt que de tĂ©tramĂšres, afin de mieux contrĂŽler la composition d'arsenic dans la couche. Des puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur GaSb ont Ă©tĂ© fabriquĂ©s et caractĂ©risĂ©s optiquement afin d'observer le passage de recombinaison de type I Ă  type II. Cependant, celui-ci n'a pas pu ĂȘtre observĂ© puisque les spectres Ă©taient dominĂ©s par un niveau Ă©nergĂ©tique dans le GaSb dont la source n'a pu ĂȘtre identifiĂ©e. Un problĂšme dans la source de gallium pourrait ĂȘtre Ă  l'origine de ce dĂ©faut et la rĂ©solution de ce problĂšme est essentielle Ă  la continuitĂ© de ces travaux.Antimonide-based semiconductors are promising in the development of optoelectronic devices considering that the high electron mobility, the possibility to emit or absorb light for a large number of wavelengths in the infrared region and the change in recombination type for confined heterostructure make them a prime subject of research. A good number of publications are aimed at developing devices based on In(x)Ga(1-x)As(y)Sb(1-y) alloys to emit or detect a specific wavelength without giving much information about the composition determination or the band alignment. There are only a few fundamental studies about the incorporation of indium and none about the incorporation of arsenic tetramers by molecular beam epitaxy. Also, the values of the band offsets between binary compounds forming the In(x)Ga(1-x)As(y)Sb(1-y) alloys diverge and the methods used to do so are sometimes arbitrary. A model was constructed and predicts the band alignment between In(x)Ga(1-x)As(y)Sb(1-y) alloys and GaSb for any values of x and y. This model considers thermal effects, strain and confinement for quantum wells. Therefore, it is possible to predict the type of recombination for any composition. Indium atoms tend to segregate on the surface while the growth of In(x)Ga(1-x)Sb on GaSb is taking place by molecular beam epitaxy. This behavior has already been seen before and the work presented here corroborates this observation. It is possible to build up a thin layer of indium on the surface prior to the growth of the alloy to avoid a change of composition in the layer. The thickness of this layer is dependent on the temperature of the substrate and can be evaluated with a simple model of segregation. In the case of a quantum well, there will be another interface where the indium floating on the surface will incorporate. To avoid the formation of a long gradient of composition at this interface, it is recommended to grow a few monolayers of GaSb at low temperature without a growth interruption. This way, the indium will incorporate rapidly and leave a sharp interface. The ratio between the indium beam equivalent pressure and the beam equivalent pressure of indium and gallium gives the nominal composition and is the same as the measured composition by XRD in the alloy. The incorporation of arsenic tetramers is not as straightforward in In(x)Ga(1-x)As(y)Sb(1-y) alloys and is shown to decrease when the V/III ratio is increased as measured by XRD. A simple kinetic model explained that this behavior is caused by antimony occupying a large fraction of the surface. The dissociation of tetramers into dimers is a reaction of second order and the tetramers occupy two sites on the surface and makes the incorporation a slower process. Therefore, the use of arsenic tetramers is not the best choice for a good control on the arsenic composition in the layer. In(x)Ga(1-x)As(y)Sb(1-y) quantum wells were grown on GaSb and were optically characterized to observe the transition of type I recombination to type II. This transition could not be corroborated because all the measurements showed an unknown transition related to the GaSb buffer layer. The origin of this optical signature could not be identified, but may be related to a contaminant in the gallium cell. Identifying the source of this problem and solving it will be essential to go further and observe the transition of type I to type II

    Étude des mĂ©canismes de capture et de fuite des excitons dans les boĂźtes quantiques d'InAs/InP

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    Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

    Carrier thermal escape in families of InAs/InP self-assembled quantum dots

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    We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs

    Loss of hepatic DEPTOR alters the metabolic transition to fasting

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    Objective The mechanistic target of rapamycin (mTOR) is a serine/threonine kinase that functions into distinct protein complexes (mTORC1 and mTORC2) that regulates growth and metabolism. DEP-domain containing mTOR-interacting protein (DEPTOR) is part of these complexes and is known to reduce their activity. Whether DEPTOR loss affects metabolism and organismal growth in vivo has never been tested. Methods We have generated a conditional transgenic mouse allowing the tissue-specific deletion of DEPTOR. This model was crossed with CMV-cre mice or Albumin-cre mice to generate either whole-body or liver-specific DEPTOR knockout (KO) mice. Results Whole-body DEPTOR KO mice are viable, fertile, normal in size, and do not display any gross physical and metabolic abnormalities. To circumvent possible compensatory mechanisms linked to the early and systemic loss of DEPTOR, we have deleted DEPTOR specifically in the liver, a tissue in which DEPTOR protein is expressed and affected in response to mTOR activation. Liver-specific DEPTOR null mice showed a reduction in circulating glucose upon fasting versus control mice. This effect was not associated with change in hepatic gluconeogenesis potential but was linked to a sustained reduction in circulating glucose during insulin tolerance tests. In addition to the reduction in glycemia, liver-specific DEPTOR KO mice had reduced hepatic glycogen content when fasted. We showed that loss of DEPTOR cell-autonomously increased oxidative metabolism in hepatocytes, an effect associated with increased cytochrome c expression but independent of changes in mitochondrial content or in the expression of genes controlling oxidative metabolism. We found that liver-specific DEPTOR KO mice showed sustained mTORC1 activation upon fasting, and that acute treatment with rapamycin was sufficient to normalize glycemia in these mice. Conclusion We propose a model in which hepatic DEPTOR accelerates the inhibition of mTORC1 during the transition to fasting to adjust metabolism to the nutritional status. Keywords: DEPTOR; mTOR; Liver; Glucose; Fastin

    Diversity of Perceptions on REDD+ Implementation at the Agriculture Frontier in Panama

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    Colonist farmers have been largely ignored to date in national consultations on reducing emissions from deforestation and forest degradation (REDD+). Yet, good practices suggest that understanding all relevant stakeholders’ perspectives, goals, and issues is a precondition for the development of successful environmental policies. The present research documents perceptions of the civil society and the government on the possibility of successfully implementing REDD+ activities with colonist farmers. The focus is on Eastern Panama. The perceptions on REDD+ vary greatly depending on the stakeholders’ origins. The government perceives REDD+ as a possibility for improving laws, increasing control over the national territory, and investing more resources for conservation and public institutions, whereas respondents from colonist backgrounds mostly insist on the potential economic benefits and/or the negative implications that could encompass REDD+. Noncolonist participants from regional, national, and international organizations instead try to balance concerns of communities and conservation objectives. Because one of our results highlighted the difficulty of colonist farmers in speaking as a united voice, we carried out a case study of a successful colonists association in order to identify the characteristics and practices found to facilitate communal organization

    Un inhibiteur de la pompe Ă  protons pour tous?

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    RĂ©sumĂ© Objectifs : Revoir la litterature scientiïŹque concernant les interactions potentielles entre les inhibiteurs de la pompe a protons et le clopidogrel, le fer, la vitamine B12 et le calcium ainsi que la relation entre cette classe de medicaments et le risque de developper de l’anemie, de l’osteoporose et une infection. Source des donnĂ©es et sĂ©lection des Ă©tudes : Une revue de la litterature medicale a ete effectuee sur PubMed (1995-2010). Les donnees presentees proviennent d’etudes cliniques, des revues de la litterature et des lignes directrices les plus recentes et pertinentes. Analyse des donnĂ©es : Meme si l’utilisation des inhibiteurs de la pompe a protons ne presente aucun danger et est largement repandue, plusieurs etudes recentes laissent entendre que cette classe de medicaments joue un role dans la baisse de l’efficacite de certains medicaments, qui serait causee par une interaction, et dans la survenue d’evenements majeurs entrainant de lourdes comorbidites. Les interactions et les evenements rapportes proviennent, pour la majorite, d’etudes a repartition non aleatoire, observationnelles et retrospectives. De plus, la plupart des resultats de ces etudes sont contradictoires, et les populations etudiees tres differentes les unes des autres. Conclusion : Malgre toutes ces donnees, nous ne pouvons pas affirmer avec certitude que les inhibiteurs de la pompe a protons soient responsables de ces interactions et de la survenue de ces evenements, etant donne la faible qualite des etudes actuellement disponibles. D’autres etudes prospectives, mecanistiques et, si possible, a repartition aleatoire et a double insu sont necessaires a l’etablissement de ces liens de causalite. Abstract Objectives: To review the literature regarding the potential interactions between proton pump inhibitors and clopidogrel, iron, vitamin B12, and calcium; and regarding the relationship between this class of drugs and the risk of developing anemia, osteoporosis, and an infection. Data and study selection: A review of the medical literature from 1995 to 2010 was done using Pub- Med. The data presented derive from clinical studies, literature reviews and from the most recent and relevant guidelines. Data analysis: Despite the widespread and safe use of proton pump inhibitors, many recent studies have implied that this class of drugs may cause drug interactions thereby diminishing the efficacy of certain drugs and also lead to major adverse events causing heavy comorbidities. Most interactions and reports of events were documented in non-randomized, observational, and retrospective studies. In addition, the results of most of these studies are contradictory and study populations are not uniform. Conclusion: Despite all of these data and given the low quality of available studies, we cannot affirm with certainty that proton pump inhibitors are responsible for these interactions and the occurrence of certain events. Other prospective, systematic, and, if possible, randomized and double-blind studies are necessary to establish causality. Key words: proton pump inhibitor, interaction, clopidogrel, iron, vitamin B12, calcium, infectio
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