Novel Polymorph of GaSe

2D GaSe is a semiconductor belonging to the group of post-transition metal chalcogenides with great potential for advanced optoelectronic applications. The weak interlayer interaction in multilayer 2D materials allows the formation of several polymorphs. Here, the first structural observation of a new GaSe polymorph is reported, characterized by a distinct atomic configuration with a centrosymmetric monolayer (D-3d point group). The atomic structure of this new GaSe polymorph is determined by aberration-corrected scanning transmission electron microscopy. Density-functional theory calculations verify the structural stability of this polymorph. Furthermore, the band structure and Raman intensities are calculated, predicting slight differences to the currently known polymorphs. In addition, the occurrence of layer rotations, interlayer relative orientations, as well as translation shear faults is discussed. The experimental confirmation of the new GaSe polymorph indicates the importance of investigating changes in the crystal structure, which can further impact the properties of this family of compoundsThis article has received support from the project Nanotechnology Based Functional Solutions (NORTE-01-0145-FEDER-000019), supported by Norte Portugal Regional Operational Programme (NORTE2020), under the PORTUGAL 2020 Partnership Agreement, through the European Regional Development Fund (ERDF). Additional support by National Funds through the Portuguese Foundation for Science and Technology (FCT) in the framework of the project "LA2D" -PTDC/FIS-NAN/3668/2014 is acknowledged. This work was supported by FCT, through IDMEC, under LAETA, project UIDB/50022/2020. A. M.-S. thanks the Marie-Curie-COFUND program Nano TRAIN for Growth II (Grant Agreement 713640) and the Ramon y Cajal programme (grant RYC2018-024024-I, MINECO, Spain). This work was carried out in part through the use of the INL Advanced Electron Microscopy, Imaging, and Spectroscopy Facility. The computations were performed on the Tirant III cluster of the Servei d'Informatica of the University of Valencia (project vlc82) and on Mare Nostrum cluster of the Barcelona Supercomputing Center (project FI-2020-2-033 and FI-2020-3-0021)

Strain-modulated optical response in 2D MoSe2 made by Na-assisted CVD on glass

Extended investigations on 2D transition metal dichalcogenides (TMDCs) have opened sound possibilities to apply these materials in several technological fields such as sensing. To this end, fully reproducible methods for the wafer-scale production of crystalline and uniform 2D TMDCs are in demand. In this work, atomically thin MoSe2 was grown by atmospheric-pressure chemical vapor deposition using the Na-assisted process with Se powder and Mo foil precursors on a glass substrate. The samples were extensively characterized via Raman and photoluminescence spectroscopy, atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy. The MoSe2 samples consist of submillimeter, monolayer single-crystals with 2H phase configuration. Being monolayer and crystalline, the samples exhibit well-defined and intense photoluminescence. CVD-grown 2D MoSe2 was integrated into a device with strain-tunable optical properties and tested. Under tensile strain (in the range of 0.2%–0.4%), the spectral emission responded to an in-plane strain with marked peak shifts toward lower energies for increasing levels of strain (∼3 and ∼2 nm shift for the main PL component at 0.2% and 0.4%, respectively), indicating a reduction of the bandgap.We acknowledge the financial support of the project “GEMIS—Graphene-enhanced Electro Magnetic Interference Shielding” with Reference No. POCI-01-0247-FEDER-045939, co-funded by COMPETE 2020—Operational Programme for Competitiveness and Internationalization and FCT—Science and Technology Foundation, under the Portugal 2020 Partnership Agreement, through the European Regional Development Fund. This work was supported by FCT, through IDMEC-Mechanical Engineering Institute, under LAETA-Associate Laboratory of Energy, Transports and Aeronautics, Project No. UIDB/50022/2020 and via the Strategic Funding UIDB/04650/2020. We thank Dr. S. Sadewasser and Mr. B. Baumgartner for their assistance in preliminary experiments

Combining Deep Learning and Compressed SensingMethods for the 3D Characterization of Ultra-ThinEpitaxial Layers Grown on Controlled-Shape Nano-Oxides

Using a nanostructured platform (a controlled-shape nano-oxide) and conventional wet impregnation techniques, powder-type materials have been prepared in which atomically thin surface layers are deposited under very mild conditions. More importantly, an advanced methodology, combining energy dispersive X-ray spectroscopy-scanning transmission electron tomography (STEM-EDX ET) and deep learning denoising techniques, has been developed for the 3D compositional characterization of these unique nanosystems. The complex case of LaOx-coated CeO2 nanocubes is illustrated. For these, aberration corrected 2D STEM-EDX evidence that ceria nanocubes become covered with a 2–4 atom-thick layer of a La, Ce-mixed oxide with spatially varying composition. However, STEM-EDX ET reveals that this layer distributes unevenly, patching most of the available nanocube surface. The large flexibility and spread availability of the involved synthetic techniques enables, using the tools here developed, a wide exploration of the wealth of questions and applications of these intriguing, atomically thin, surface oxide phases10 página

Design and Fabrication of TiO₂/Lignocellulosic Carbon Materials:Relevance of Low-temperature Sonocrystallization to Photocatalysts Performance

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Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices

Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.Comment: 16 Pages, 5 figures. Supplementary Information included in the end (+10 pages, +10 Figures, + 2 Tables). Partially presented at 21st ICMBE - September 202

A modular design approach to polymer-coated ZnO nanocrystals

Summary: Hybrid materials based on inorganic nanocrystals with organic polymers feature peculiar and fascinating properties and various applications. However, there is still a need for simple synthesis procedures that provide precise control over the polymer/nanocrystal microstructure of these materials. Herein, a novel organometallic approach to polymer-coated ZnO nanocrystals was developed. The presented method merges the initial ring-opening polymerization of ϵ-caprolactone mediated by an organozinc alkoxide initiator and an air-promoted transformation of the resulting macromolecular organozinc species. This one-pot procedure results in quantum-sized ZnO crystals with a core diameter of ca 3 nm coated by poly(ϵ-caprolactone) covalently bonded to the surface. Overall, the ability to create well-defined hybrid composites should provide a unique ability to access various nanosystems

Diatom phenotypic plasticity: Olifantiella gorandiana epizoic on 'G5-Manahere' (Society Archipelago, South Pacific), a case study

International audienceFirst described from the Mascarenes (Rodrigues Island, Indian Ocean), Olifantiella gorandiana Riaux-Gobin was later observed from several other oceanic basins. We here examine the morphology of this taxon from a scraping of a juvenile green turtle Chelonia mydas Linnaeus, named ‘G5-Manahere’, from Moorea Island (Society Archipelago, South Pacific). In this sample, a great range of morphologies, not previously described for the species, were encountered, demonstrating a high degree of polymorphism with regard to valve shape and also stria pattern. These morphological differences appear to be associated with size, as smaller cells become more rounded. The fine structure (e.g., stria density and pattern) may also be associated with changes in shape. These specimens may all belong to the same and unique taxon: Olifantiella gorandiana. This high degree of polymorphism is described, and put into the context of the constraining epizoic conditions. This study permits furthers the description of the fine structure of O. gorandiana, using focused ion beam (FIB) and scanning electron microscopy (SEM) techniques

Dust Monitors in JET with ITER-like Wall for Diagnosis of Mobilized Particles and Co-Deposited Layers

Silicon plates were installed above the inner and outer divertor of the JET with the ITER-like wall (ILW) after the second and third ILW campaigns to monitor dust generation and deposition with the aim to determine the morphology and content of individual particles and co-deposits, including deuterium content. Particular interest was in metal-based particles: Be, W, steel, Cu. Ex-situ examination after two ILW campaigns was performed by a set of microscopy and ion beam methods including micro-beam nuclear reaction analysis and particle-induced X-ray emission. Different categories of Be-rich particles were found: co-deposits peeled-off from plasma-facing components (PFC), complex multi-element spherical objects, and solid metal splashes and regular spherical droplets. The fuel content on the two latter categories was at the level of 1 × 1016 at/cm−2 indicating that Be melting and splashing occurred in the very last phase of the second experimental campaign. The splashes adhere firmly to the substrate thus not posing risk of Be dust mobilisation. No tungsten droplets were detected. The only W-containing particles were fragments of tungsten coatings from the divertor tiles