Efficient computation of partial elements in the full-wave surface-peec method

The partial element equivalent circuit (PEEC) method provides an electromagnetic model of interconnections and packaging structures in terms of standard circuit elements. The surface-based PEEC (S-PEEC) formulation can reduce the number of unknowns compared to the standard volume-based PEEC (V-PEEC) method. This reduction is of particular use in the case of high-speed circuits and high-switching power electronics, where the bandwidth extends from low frequencies to the GHz range. In this article, the S-PEEC formulation is revised and cast in a matrix form. The main novelty is that the interaction integrals involving the curl of the magnetic and electric vector potentials are computed through the Taylor series expansion of the full-wave Green’s function, leading to analytical forms that are rigorously derived. Therefore, the numerical integration is avoided, with a consequent reduction of the computation time. The proposed formulas are studied in terms of the frequency, size of the mesh, and distance between the basis function domains. Three examples are presented, confirming the accuracy of the proposed method compared to the V-PEEC method and surface-based numerical methods from literature

Coulomb correlation effects in zinc monochalcogenides

Electronic structure and band characteristics for zinc monochalcogenides with zinc-blende- and wurtzite-type structures are studied by first-principles density-functional-theory calculations with different approximations. It is shown that the local-density approximation underestimates the band gap and energy splitting between the states at the top of the valence band, misplaces the energy levels of the Zn-3d states, and overestimates the crystal-field-splitting energy. Regardless of the structure type considered, the spin-orbit-coupling energy is found to be overestimated for ZnO and underestimated for ZnS with wurtzite-type structure, and more or less correct for ZnSe and ZnTe with zinc-blende-type structure. The order of the states at the top of the valence band is found to be anomalous for ZnO in both zinc-blende- and wurtzite-type structure, but is normal for the other zinc monochalcogenides considered. It is shown that the Zn-3d electrons and their interference with the O-2p electrons are responsible for the anomalous order. The typical errors in the calculated band gaps and related parameters for ZnO originate from strong Coulomb correlations, which are found to be highly significant for this compound. The LDA+U approach is by and large found to correct the strong correlation of the Zn-3d electrons, and thus to improve the agreement with the experimentally established location of the Zn-3d levels compared with that derived from pure LDA calculations

Electronic structure and band parameters for ZnX (X = O, S, Se, Te)

First-principles density-functional calculations have been performed for zinc monochalcogenides with zinc-blende- and wurtzite-type structures. It is shown that the local-density approximation underestimates the band gap, misplaces the energy levels of the Zn-3d states, and overestimates the crystal-field splitting energy. Without spinorbit coupling, the order of the states at the top of VB is found to be normal for all the ZnX phases considered. Upon inclusion of the spinorbit coupling in calculations, ZnO in zinc-blende- and wurtzite-type phases become anomalous. It is shown that the Zn-3d electrons are responsible for the anomalous order. The effective masses of electrons and holes have been calculated and found that holes are much anisotropic and heavier than the electrons in agreement with experimental findings. The typical errors in calculated band gaps and related parameters originate from strong Coulomb correlations, which are found to be highly significant in ZnO. The LDA+U approach is found to correct the strong correlation of the Zn-3d electrons, and thus improves the agreement with the experimentally established location of the Zn-3d levels. Consequently, it increases significantly the parameters underestimated in the pure LDA calculations.Comment: 7 pages, 3 figures, 2 tables, ICAM-ICMAT conference, 200

Distinctive subdomains in the resorbing surface of osteoclasts.

We employed a novel technique to inspect the substrate-apposed surface of activated osteoclasts, the cells that resorb bone, in the scanning electron microscope. The surface revealed unexpected complexity. At the periphery of the cells were circles and crescents of individual or confluent nodules. These corresponded to the podosomes and actin rings that form a 'sealing zone', encircling the resorptive hemivacuole into which protons and enzymes are secreted. Inside these rings and crescents the osteoclast surface was covered with strips and patches of membrane folds, which were flattened against the substrate surface and surrounded by fold-free membrane in which many orifices could be seen. Corresponding regions of folded and fold-free membrane were found by transmission electron microscopy in osteoclasts incubated on bone. We correlated these patterns with the distribution of several proteins crucial to resorption. The strips and patches of membrane folds corresponded in distribution to vacuolar H+-ATPase, and frequently co-localized with F-actin. Cathepsin K localized to F-actin-free foci towards the center of cells with circular actin rings, and at the retreating pole of cells with actin crescents. The chloride/proton antiporter ClC-7 formed a sharply-defined band immediately inside the actin ring, peripheral to vacuolar H+-ATPase. The sealing zone of osteoclasts is permeable to molecules with molecular mass up to 10,000. Therefore, ClC-7 might be distributed at the periphery of the resorptive hemivacuole in order to prevent protons from escaping laterally from the hemivacuole into the sealing zone, where they would dissolve the bone mineral. Since the activation of resorption is attributable to recognition of the αVβ3 ligands bound to bone mineral, such leakage would, by dissolving bone mineral, release the ligands and so terminate resorption. Therefore, ClC-7 might serve not only to provide the counter-ions that enable proton pumping, but also to facilitate resorption by acting as a 'functional sealing zone'

Theoretical study of As overlayers on InP(110) surface: optical properties

The reflectance anisotropy of the As/InP(110) surface is calculated by using an ab initio plane-wave pseudopotential method. We analyze different models of As coverage, ranging from non-reacted epitaxial layers to exchange-reacted geometries. Comparison with experimental data confirms that the annealed, highly ordered surface phase can be described by an InAs monolayer on the InP substrate (exchange reacted model), whereas the reflectance anisotropy of the as-grown, poorly ordered As/InP surface probably is dominated by disorder effects. (C) 1998 Elsevier Science B.V. All rights reserved

Ab initio calculation of the reflectance anisotropy of surfaces: The triangle method

We modify the analytic linear tetrahedron method to calculate the optical properties of surfaces. As st test case, the reflectance anisotropy of InP(110) is calculated within the density-functional theory in the local-density approximation. The convergence with respect to the number of k points and the choice of the triangles is extensively discussed. The resulting spectra are interpreted and compared with experimental results