Ageing and relaxation times in disordered insulators

We focus on the slow relaxations observed in the conductance of disordered insulators at low temperature (especially granular aluminum films). They manifest themselves as a temporal logarithmic decrease of the conductance after a quench from high temperatures and the concomitant appearance of a field effect anomaly centered on the gate voltage maintained. We are first interested in ageing effects, i.e. the age dependence of the dynamical properties of the system. We stress that the formation of a second field effect anomaly at a different gate voltage is not a "history free" logarithmic (lnt) process, but departs from lnt in a way which encodes the system's age. The apparent relaxation time distribution extracted from the observed relaxations is thus not "constant" but evolves with time. We discuss what defines the age of the system and what external perturbation out of equilibrium does or does not rejuvenate it. We further discuss the problem of relaxation times and comment on the commonly used "two dip" experimental protocol aimed at extracting "characteristic times" for the glassy systems (granular aluminum, doped indium oxide...). We show that it is inoperable for systems like granular Al and probably highly doped InOx where it provides a trivial value only determined by the experimental protocol. But in cases where different values are obtained like in lightly doped InOx or some ultra thin metal films, potentially interesting information can be obtained, possibly about the "short time" dynamics of the different systems. Present ideas about the effect of doping on the glassiness of disordered insulators may also have to be reconsidered.Comment: to appear in the proceedings of the 14th International Conference on Transport and Interactions in Disordered Systems (TIDS14

Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films

We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics

Paraconductivity of granular Al films at high reduced temperatures and magnetic fields

International audienceThe electrical conductivity induced near the superconducting transition by thermal fluctuations was measured in different granular aluminum films. The seemingly anomalous behavior at high reduced temperatures and magnetic fields is explained by taking into account a total-energy cutoff in the superconducting fluctuation spectrum in both the direct (Aslamazov-Larkin) and the indirect (anomalous Maki-Thompson) contributions to the fluctuation effects. The analysis allowed a reliable determination of the coherence length amplitudes, which resulted to be much larger (20-48 nm) than the grains size (5-10 nm). This suggests that the grains are strongly Josephson-coupled, while the T c value is still as high as twice the bulk value. These results could contribute to identifying the mechanisms enhancing T c in these materials

Manifestation of ageing in the low temperature conductance of disordered insulators

We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy state. It is the fact that the dynamical properties of a glass depend on its age, i.e. on the time elapsed since it was quench-cooled. We first critically analyse previous studies on disordered insulators and question their interpretation in terms of ageing. We then present new measurements on insulating granular aluminium thin films which demonstrate that the dynamics is indeed age dependent. We also show that the results of different relaxation protocols are related by a superposition principle. The implications of our findings for the mechanism of the conductance slow relaxations are then discussed

Electron glass effects in amorphous NbSi films

We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.Comment: Submission SciPos

Processing Succinct Matrices and Vectors

We study the complexity of algorithmic problems for matrices that are represented by multi-terminal decision diagrams (MTDD). These are a variant of ordered decision diagrams, where the terminal nodes are labeled with arbitrary elements of a semiring (instead of 0 and 1). A simple example shows that the product of two MTDD-represented matrices cannot be represented by an MTDD of polynomial size. To overcome this deficiency, we extended MTDDs to MTDD_+ by allowing componentwise symbolic addition of variables (of the same dimension) in rules. It is shown that accessing an entry, equality checking, matrix multiplication, and other basic matrix operations can be solved in polynomial time for MTDD_+-represented matrices. On the other hand, testing whether the determinant of a MTDD-represented matrix vanishes PSPACE$-complete, and the same problem is NP-complete for MTDD_+-represented diagonal matrices. Computing a specific entry in a product of MTDD-represented matrices is #P-complete.Comment: An extended abstract of this paper will appear in the Proceedings of CSR 201

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K<T<450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.660.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.14 page

Do drugs interact together in cardiovascular prevention? A meta-analysis of powerful or factorial randomized controlled trials.

To explore whether preventive cardiovascular drugs (antihypertensive, antiplatelet, lipid lowering and hypoglycemic agents) interact together in cardiovascular prevention. We searched PubMed®, Web of science™, Embase and Cochrane library for powerful randomized placebo-controlled trials (&gt;1000 patients). We explored whether drug effect on major vascular events changed according to cross-exposure to other drug classes or to cardiovascular risk factors (hypertension or type 2 diabetes), through a meta-analysis of relative odds ratio computed by trial subgroups. A significant interaction was suggested from confidence intervals of the ratio of odds ratios, when they excluded neutral value of 1. In total, 14 trials with 178,398 patients were included. No significant interaction was observed between co-prescribed drugs or between these medications and type 2 diabetes/hypertension status. Our meta-analysis is the first one to evaluate drug-drug and drug-hypertension/type 2 diabetes status interactions in terms of cardiovascular risks: we did not observe any significant interaction. This indirectly reinforces the rationale of using several contrasted mechanisms to address cardiovascular prevention; and allows the combination effect prediction by a simple multiplication of their odds ratios. The limited availability of data reported or obtained from authors is a strong argument in favor of data sharing