Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport

A non-equilibrium Green's function method is applied to model high-field quantum transport and electron-phonon resonances in semiconductor superlattices. The field-dependent density of states for elastic (impurity) scattering is found non-perturbatively in an approach which can be applied to both high and low electric fields. I-V curves, and specifically electron-phonon resonances, are calculated by treating the inelastic (LO phonon) scattering perturbatively. Calculations show how strong impurity scattering suppresses the electron-phonon resonance peaks in I-V curves, and their detailed sensitivity to the size, strength and concentration of impurities.Comment: 7 figures, 1 tabl

Coulomb dissociation of O-16 into He-4 and C-12

We measured the Coulomb dissociation of O-16 into He-4 and C-12 within the FAIR Phase-0 program at GSI Helmholtzzentrum fur Schwerionenforschung Darmstadt, Germany. From this we will extract the photon dissociation cross section O-16(alpha,gamma)C-12, which is the time reversed reaction to C-12(alpha,gamma)O-16. With this indirect method, we aim to improve on the accuracy of the experimental data at lower energies than measured so far. The expected low cross section for the Coulomb dissociation reaction and close magnetic rigidity of beam and fragments demand a high precision measurement. Hence, new detector systems were built and radical changes to the (RB)-B-3 setup were necessary to cope with the high-intensity O-16 beam. All tracking detectors were designed to let the unreacted O-16 ions pass, while detecting the C-12 and He-4

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the blue band infrared/barrier/p-type layer, and a “red channel” (RC) diode which has a pBn architecture, a p-type layer of a smaller bandgap for absorbing the red band infrared/barrier/n-type layer. Each has a unipolar barrier using a T2SL lattice matched to a GaSb substrate to impede the flow of majority carriers from the absorbing layer. Each channel in the DBIRD can be independently accessed with a low bias voltage as is preferable for high-speed thermal imaging. The device modeling of DBIRDs and simulation results of the current–voltage characteristics under dark and illuminated conditions are also presented. They predict that the dual-band operation of the DBIRD will produce low dark currents and 45–56% quantum efficiencies for the in-band photons in the BC with λc = 5.58 μm, and a nearly constant 32% in the RC with λc = 8.05 μm. The spectral quantum efficiency of the BC for 500 K blackbody radiation is approximately 50% over the range of λ = 3–4.7 μm, while that of the RC has a peak of 42% at 5.9 μm. The DBIRD may provide improved high-speed dual-band imaging in comparison with NBn dual-band detectors

InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability

High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, and quantum applications. This paper reports antimony-based separate absorption, charge, and multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is used for the multiplier region, and InGaAs is used as the absorber. The excess noise is comparable to that of silicon APDs; the k-value is more than one order of magnitude lower than that of APDs that use InP or InAlAs for the gain region. The external quantum efficiency without an anti-reflection coating at 1550 nm is 57%. The gradient of the temperature coefficient of avalanche breakdown voltage is 6.7 mV/K/μm, which is less than one-sixth that of InP APDs, presenting the potential to reduce the cost and complexity of receiver circuits. Semi-insulating InP substrates make high-speed operation practical for widely reported AlxIn1−xAsySb1−y-based APDs

Electro-Optical Characterization of MWIR InAsSb Detectors

InAs1-xSbx material with an alloy composition of the absorber layer adjusted to achieve 200K cutoff wavelengths in the 5 μm range has been grown. Compound-barrier (CB) detectors were fabricated and tested for optical response and Jdark-Vd measurements were acquired as a function of temperature. Based on absorption coefficient information in the literature and spectral response measurements of the midwave infrared (MWIR) nCBn detectors, an absorption coefficient formula α(Ε, x, T) is proposed. Since the presently suggested absorption coefficient is based on limited data, additional measurements of material and detectors with different x values and as a function of temperature should refine the absorption coefficient, providing a more accurate parametrization. Material electronic structures were computed using a k•p formalism. From the band structure, dark current density (Jdark) as a function of bias (Vd) and temperature (T) were calculated and matched to Jdark-Vd at fixed T and Jdark-T at constant Vd curves. There is a good match between simulation and data over a wide range of bias, but discrepancies that are not presently understood exist near zero bias