Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)

The substitutional series of Heusler compounds NiTi1−xMxSn (where M=Sc,V and 0<x≤0.2) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and compared to the measurements. Hard x-ray photoelectron spectroscopy was carried out and the results are compared to the calculated electronic structure. Pure NiTiSn exhibits massive “in gap” states containing about 0.1 electrons per cell. The comparison of calculations, x-ray diffraction, and photoemission reveals that Ti atoms swapped into the vacant site are responsible for these states. The carrier concentration and temperature dependence of electrical conductivity, Seebeck coefficient, and thermal conductivity were investigated in the range from 10 to 300 K. The experimentally determined electronic structure and transport measurements agree well with the calculations. The sign of the Seebeck coefficient changes from negative for V to positive for Sc substitution. The high n-type and low p-type power factors are explained by differences in the chemical-disorder scattering-induced electric resistivity. Major differences appear because p-type doping (Sc) creates holes in the triply degenerate valence band at Γ whereas n-type doping (V) fills electrons in the single conduction band above the indirect gap at X what is typical for all semiconducting transition-metal-based Heusler compounds with C1b structure

Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5_{0.5}Hf0.5_{0.5}Sn thin films by hard x-ray photoelectron spectroscopy

The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {\it "in-gap"} states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials

Magnetic dichroism in angular-resolved hard X-ray photoelectron spectroscopy from buried layers

This work reports the measurement of magnetic dichroism in angular-resolved photoemission from in-plane magnetized buried thin films. The high bulk sensitivity of hard X-ray photoelectron spectroscopy (HAXPES) in combination with circularly polarized radiation enables the investigation of the magnetic properties of buried layers. HAXPES experiments with an excitation energy of 8 keV were performed on exchange-biased magnetic layers covered by thin oxide films. Two types of structures were investigated with the IrMn exchange-biasing layer either above or below the ferromagnetic layer: one with a CoFe layer on top and another with a Co$_2$FeAl layer buried beneath the IrMn layer. A pronounced magnetic dichroism is found in the Co and Fe $2p$ states of both materials. The localization of the magnetic moments at the Fe site conditioning the peculiar characteristics of the Co$_2$FeAl Heusler compound, predicted to be a half-metallic ferromagnet, is revealed from the magnetic dichroism detected in the Fe $2p$ states

Electronic and crystallographic structure, hard x-ray photoemission, and mechanical and transport properties of the half-metallic Heusler compound Co2MnGe

This work reports on the electronic and crystalline structure and the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co2MnGe. The crystalline structure was examined in detail by extended x-ray absorption fine-structure spectroscopy and anomalous x-ray diffraction. The compound exhibits a well-ordered L21 structure as is typical for Heusler compounds with 2:1:1 stoichiometry. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab initio calculations. Transport measurements and hard x-ray photoelectron spectroscopy were performed to explain the electronic structure of the compound. The obtained valence band spectra exhibit small energy shifts that are the result of the photoexcitation process, whereas electron-electron correlation in the ground state is negligible. The vibration and mechanical properties of the compound were calculated. The observed hardness values are consistent to a covalent-like bonding of Co2MnGe

Structure determination of thin CoFe films by anomalous x-ray diffraction

This work reports on the investigation of structure-property relationships in thin CoFe films grown on MgO. Because of the very similar scattering factors of Fe and Co, it is not possible to distinguish the random A2 (W-type) structure from the ordered B2 (CsCl-type) structure with commonly used x-ray sources. Synchrotron radiation based anomalous x-ray diffraction overcomes this problem. It is shown that as grown thin films and 300 K post annealed films exhibit the A2 structure with a random distribution of Co and Fe. In contrast, films annealed at 400 K adopt the ordered B2 structure.Web of Science1127art. no. 07490

Electronic and crystallographic structure, hard x-ray photoemission, and mechanical and transport properties of the half-metallic Heusler compound Co2MnGe

This work reports on the electronic and crystalline structure and the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co2MnGe. The crystalline structure was examined in detail by extended x-ray absorption fine-structure spectroscopy and anomalous x-ray diffraction. The compound exhibits a well-ordered L21 structure as is typical for Heusler compounds with 2:1:1 stoichiometry. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab initio calculations. Transport measurements and hard x-ray photoelectron spectroscopy were performed to explain the electronic structure of the compound. The obtained valence band spectra exhibit small energy shifts that are the result of the photoexcitation process, whereas electron-electron correlation in the ground state is negligible. The vibration and mechanical properties of the compound were calculated. The observed hardness values are consistent to a covalent-like bonding of Co2MnGe