Measuring carrier density in parallel conduction layers of quantum Hall systems

An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel conduction in the modulation-doped layer, this analysis quantitatively determines the charge density in the doping layer and can be used to estimate the mobility. To illustrate one application, experimental data show magnetic freeze-out of parallel conduction in a modulation doped heterojunction. As another example, the carrier density of a minimally populated second subband in a two-subband quantum well is determined. A simple formula is derived that can estimate the carrier density in a highly resistive parallel layer from a single Hall measurement of the total system.Comment: 7 pages, 7 figure

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure

Aluminum arsenide cleaved-edge overgrown quantum wires

We report conductance measurements in quantum wires made of aluminum arsenide, a heavy-mass, multi-valley one-dimensional (1D) system. Zero-bias conductance steps are observed as the electron density in the wire is lowered, with additional steps observable upon applying a finite dc bias. We attribute these steps to depopulation of successive 1D subbands. The quantum conductance is substantially reduced with respect to the anticipated value for a spin- and valley-degenerate 1D system. This reduction is consistent with disorder-induced, intra-wire backscattering which suppresses the transmission of 1D modes. Calculations are presented to demonstrate the role of strain in the 1D states of this cleaved-edge structure.Comment: Submitted to Applied Physics Letter

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

A doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow post-illumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring post-illumination annealing to T = 30 K to saturate the PPC. Dark and post-illumination doping efficiencies are reported.Comment: The values of binding energy changed from previous versions because of a better understanding for the dielectric permittivity. Also, the Gamma - X donor states are better explaine

Experiments on the Fermi to Tomonaga-Luttinger liquid transition in quasi-1D systems

We present experimental results on the tunneling into the edge of a two dimensional electron gas (2DEG) obtained with GaAs/AlGaAs cleaved edge overgrown structures. The electronic properties of the edge of these systems can be described by a one-dimensional chiral Tomonaga-Luttinger liquid when the filling factor of the 2DEG is very small. Here we focus on the region where the Tomonaga-Luttinger liquid breaks down to form a standard Fermi liquid close to $\nu=1$ and show that we recover a universal curve, which describes all existing data.Comment: 5 pages, localisation 2002, conference proceeding

Fermi liquid to Luttinger liquid transition at the edge of a two-dimensional electron gas

We present experimental results on the tunneling into the edge of a two dimensional electron gas (2DEG) obtained with a GaAs/AlGaAs cleaved edge overgrown structure in a strong perpendicular magnetic field. While the 2DEG exhibits typical fractional quantum Hall features of a very high mobility sample, we observe the onset of a non-linear current-voltage characteristic in the vicinity of nu=1. For filling factor nu<1 the system is consistent with a non-Fermi liquid behavior, such as a Luttinger liquid, whereas for nu>1 we observe an Ohmic tunneling resistance between the edge and a three dimensional contact, typical for a Fermi liquid. Hence, at the edge, there is a transition from a Luttinger liquid to a Fermi liquid. Finally, we show that the Luttinger liquid exponent at a given filling factor is not universal but depends on sample parameters.Comment: 4 pages, 4 figure

Tunnelling Spectroscopy of Localized States near the Quantum Hall Edge

In the paper we dscuss experimental results of M. Grayson et al. on tunneling $I$-$V$ characteristics of the quantum Hall edge. We suggest a two step tunneling mechanism involving localized electron states near the edge, which might account for discrepancy between the experimental data and the predictions of the chiral Luttinger liquid theory of the quantum Hall edge.Comment: 4 pages, revte

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation matrix is defined to transform from the conventional- cubic-cell basis to the quantum-well-transport basis whereby effective mass tensors, valley vectors, strain matrices, anisotropic strain ratios, and scattering vectors are all defined in their respective bases. The specific cases of (001)-, (110)-, and (111)-oriented aluminum arsenide (AlAs) quantum wells are examined, as is the unconventional (411) facet, which is of particular importance in AlAs literature. Calculations of electron confinement and strain in the (001), (110), and (411) facets determine the critical well width for crossover from double- to single-valley degeneracy in each system. The notation is generalized to include miscut angles, and can be adapted to other multi-valley systems. To help classify anisotropic inter-valley scattering events, a new primitive unit cell is defined in momentum space which allows one to distinguish purely in-plane inter-valley scattering events from those that requires an out-of-plane momentum scattering component.Comment: 17 pages, 4 figures, 2 table

Improving the Sensitivity of LISA

It has been shown in the past, that the six Doppler data streams obtained LISA configuration can be combined by appropriately delaying the data streams for cancelling the laser frequency noise. Raw laser noise is several orders of magnitude above the other noises and thus it is essential to bring it down to the level of shot, acceleration noises. A rigorous and systematic formalism using the techniques of computational commutative algebra was developed which generates all the data combinations cancelling the laser frequency noise. The relevant data combinations form a first module of syzygies. In this paper we use this formalism for optimisation of the LISA sensitivity by analysing the noise and signal covariance matrices. The signal covariance matrix, averaged over polarisations and directions, is calculated for binaries whose frequency changes at most adiabatically. We then present the extremal SNR curves for all the data combinations in the module. They correspond to the eigenvectors of the noise and signal covariance matrices. We construct LISA `network' SNR by combining the outputs of the eigenvectors which improves the LISA sensitivity substantially. The maximum SNR curve can yield an improvement upto 70 % over the Michelson, mainly at high frequencies, while the improvement using the network SNR ranges from 40 % to over 100 %. Finally, we describe a simple toy model, in which LISA rotates in a plane. In this analysis, we estimate the improvement in the LISA sensitivity, if one switches from one data combination to another as it rotates. Here the improvement in sensitivity, if one switches optimally over three cyclic data combinations of the eigenvector is about 55 % on an average over the LISA band-width. The corresponding SNR improvement is 60 %, if one maximises over the module.Comment: 16 pages, 10 figures, Submitted to Class. Quant. Gravit

Dynamics of Dissipative Quantum Hall Edges

We examine the influence of the edge electronic density profile and of dissipation on edge magnetoplasmons in the quantum Hall regime, in a semiclassical calculation. The equilibrium electron density on the edge, obtained using a Thomas-Fermi approach, has incompressible stripes produced by energy gaps responsible for the quantum Hall effect. We find that these stripes have an unobservably small effect on the edge magnetoplasmons. But dissipation, included phenomenologically in the local conductivity, proves to produce significant oscillations in the strength and speed of edge magnetoplasmons in the quantum Hall regime.Comment: 23 pages including 10 figure