Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy

We demonstrate a technique to monitor the defect density in capped quantum dot (QD) structures by performing an atomic force microscopy (AFM) of the final surface. Using this method we are able to correlate their density with the optical properties of the dot structures grown at different temperatures. Parallel transmission electron microscopy analysis shows that the AFM features are directly correlated with the density of stacking faults that originate from abnormally large dots. The technique is rapid and noninvasive making it an ideal diagnostic tool for optimizing the parameters of practical QD-based devices. (C) 2010 American Institute of Physics. (doi:10.1063/1.3514237

Coulomb effect inhibiting spontaneous emission in charged quantum dot

We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum well in a tunnel injection scheme by means of time-resolved photoluminescence. Under high-power excitation we observe a redshift in the QD emission of the order of 20 meV. The optical transition intensity shows a complex evolution, where an initial plateau phase is followed by an increase in intensity before a single-exponential decay. We attribute this behavior to the Coulomb interactions between the carriers in a charged QD and corroborate the experimental results with both a rate equation model and self-consistent eight-band k.p calculations. (C) 2010 American Institute of Physics. (doi:10.1063/1.3484143

Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation

Optical properties of GaAs/InGaAs/GaAs nanopillars (NPs) grown on GaAs (111)B were investigated. Employment of a mask-etching technique allowed for an accurate control over the geometry of NP arrays in terms of both their diameter and separation. This work describes both the steady-state and time-resolved photoluminescence of these structures as a function of the ensemble geometry, composition of the insert, and various shell compounds. The effects of the NP geometry on a parasitic radiative recombination channel, originating from an overgrown lateral sidewall layer, are discussed. Optical characterization reveals a profound influence of the core-shell lattice mismatch on the carrier lifetime and emission quenching at room temperature. When the latticematching conditions are satisfied, an efficient emission from the NP arrays at room temperature and below the band-gap of silicon is observed, clearly highlighting their potential application as emitters in optical interconnects integrated with silicon platforms

Complex emission dynamics of type-II GaSb/GaAs quantum dots

Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies. (C) 2009 American Institute of Physics. (10.1063/1.3202419

Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431

Pluggable single-mode fiber-array-to-pic coupling using micro-lenses

Single-mode optical coupling between fiber and photonic integrated circuit (PIC) requires precision alignment and bonding, and significantly adds to the cost of photonic packaging. This article describes how a pair of micro-lens arrays-one on the Si-PIC and the other on the fiber-array-can be used to achieve fiber-to-PIC grating-coupling with an insertion-loss of 1.7 dB (i.e., a coupling efficiency of 68%) at 1300 nm, and a 1 dB alignment tolerance of +/- 30 mu m. Such relaxed tolerances allow for a "pluggable" connector to have a make-break insertion-loss reproducibility of 0.2 dB (one standard deviation)

Doped colloidal InAs nanocrystals in the single ionized dopant limit

We investigate the electronic properties of individual n-type (Cu) doped and p-type (Ag) doped InAs colloidal nanocrystals (NCs) in the 2–8 nm size range from their charge transfers toward a highly oriented pyrolytic graphite (HOPG) substrate, using ultrahigh vacuum Kelvin probe force microscopy (KPFM) with elementary charge sensitivity at 300 K. The NC active dopant concentration is measured as ND = 8 × 1020 cm–3 and NA > 5 × 1020 cm–3 for n- and p-type doping, respectively. The electrostatic equilibrium between the NC and the HOPG reference substrate is investigated and reveals an enhancement of the Fermi-level mismatch between the NCs and the HOPG substrate at reduced NC sizes, both for n- and p-type doping. It also shows, for n-type doped NCs with smallest sizes (∼2 nm), the existence of a full depletion regime, in which smallest NCs contain single ionized dopants. Results are compared with self-consistent tight-binding calculations of the electronic structure of InAs NCs, including hydrogenoid impurities and the presence of a host substrate, in the case of n-type doped NCs. The observed enhancement of the NC–HOPG Fermi-level mismatch can be understood by considering a size-dependent electrostatic contribution attributed to dipolar effects at the NC–ligand interface. The estimated surface dipole density equals a few Debye/nm2 and is increased at smallest NC sizes, which follows the enhancement of ligand densities at small NC sizes previously reported for metallic or semiconducting NCs. The results put forward the role played by the NC–ligand interface electrostatics for electronic applications

3D-printed facet-attached microlenses for advanced photonic system assembly

Wafer-level mass production of photonic integrated circuits (PIC) has become a technological mainstay in the field of optics and photonics, enabling many novel and disrupting a wide range of existing applications. However, scalable photonic packaging and system assembly still represents a major challenge that often hinders commercial adoption of PIC-based solutions. Specifically, chip-to-chip and fiber-to-chip connections often rely on so-called active alignment techniques, where the coupling efficiency is continuously measured and optimized during the assembly process. This unavoidably leads to technically complex assembly processes and high cost, thereby eliminating most of the inherent scalability advantages of PIC-based solutions. In this paper, we demonstrate that 3D-printed facet-attached microlenses (FaML) can overcome this problem by opening an attractive path towards highly scalable photonic system assembly, relying entirely on passive assembly techniques based on industry-standard machine vision and/or simple mechanical stops. FaML can be printed with high precision to the facets of optical components using multi-photon lithography, thereby offering the possibility to shape the emitted beams by freely designed refractive or reflective surfaces. Specifically, the emitted beams can be collimated to a comparatively large diameter that is independent of the device-specific mode fields, thereby relaxing both axial and lateral alignment tolerances. Moreover, the FaML concept allows to insert discrete optical elements such as optical isolators into the free-space beam paths between PIC facets. We show the viability and the versatility of the scheme in a series of selected experiments of high technical relevance, comprising pluggable fiber-chip interfaces, the combination of PIC with discrete micro-optical elements such as polarization beam splitters, as well as coupling with ultra-low back-reflection based on non-planar beam paths that only comprise tilted optical surfaces. Based on our results, we believe that the FaML concept opens an attractive path towards novel PIC-based system architectures that combine the distinct advantages of different photonic integration platforms

Electrowetting controlled non-volatile integrated optical switch

We present the proof of concept of the first non-volatile bistable fiber optic switch combining integrated optics and electrowetting-actuated microfluidics. Design and realization of both EWOD and photonic layer are presented and successful switching of a 2×4 network is demonstrated

Coupling strategies for silicon photonics integrated chips

Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of silicon photonics is its ability to provide extremely small optical components, whose typical dimensions are an order of magnitude smaller than those of optical fiber devices. This dimension difference makes the design of fiber-to-chip interfaces challenging and, over the years, has stimulated considerable technical and research efforts in the field. Fiber-to-silicon photonic chip interfaces can be broadly divided into two principle categories: in-plane and out-of-plane couplers. Devices falling into the first category typically offer relatively high coupling efficiency, broad coupling bandwidth (in wavelength), and low polarization dependence but require relatively complex fabrication and assembly procedures that are not directly compatible with wafer-scale testing. Conversely, out-of-plane coupling devices offer lower efficiency, narrower bandwidth, and are usually polarization dependent. However, they are often more compatible with high-volume fabrication and packaging processes and allow for on-wafer access to any part of the optical circuit. In this paper, we review the current state-of-the-art of optical couplers for photonic integrated circuits, aiming to give to the reader a comprehensive and broad view of the field, identifying advantages and disadvantages of each solution. As fiber-to-chip couplers are inherently related to packaging technologies and the co-design of optical packages has become essential, we also review the main solutions currently used to package and assemble optical fibers with silicon-photonic integrated circuits