The effect of protons on the performance of swept-charge devices

This is the pre-print version of the final paper published in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. The published article is available from the link below. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. Copyright @ 2009 Elsevier B.V.The e2v technologies CCD54, or swept-charge device (SCD) has been extensively radiation tested for use in the Chandrayaan-1 X-ray Spectrometer (C1XS) instrument, to be launched as a part of the Indian Space Research Organisation (ISRO) Chandrayaan-1 payload in 2008. The principle use of the SCD is in X-ray fluorescence (XRF) applications, the device providing a relatively large collecting area of 1.1 cm2, and achieving near Fano-limited spectroscopy at −15 °C, a temperature that is easily obtained using a thermoelectric cooler (TEC). This paper describes the structure and operation of the SCD and details the methodology and results obtained from two proton irradiation studies carried out in 2006 and 2008, respectively to quantify the effects of proton irradiation on the operational characteristics of the device. The analysis concentrates on the degradation of the measured FWHM of various elemental lines and quantifies the effects of proton fluence on the observed X-ray fluorescence spectra from mineralogical target samples

Radiation Damage Analysis of the Swept Charge Device for the C1XS Instrument

Since the dawn of the space age the ability to capture images from orbit and deep space missions has proved invaluable. Interference caused by the Earth’s atmosphere is bypassed, thus allowing for the detailed observation of distant and faint objects that would be hard to detect using ground based observatories. However, this method introduces a number of new problems, these include placing the spacecraft into a viable and suitable orbit, pointing stability, data retrieval, power consumption, and problems associated with the vacuum of space, micrometeoroids, orbital debris, and the thermal and radiation environment. The focus of this thesis is concerned with ensuring high energy resolution from the swept charge devices (SCDs), essentially a non-pixellated version of the charge coupled device (CCD), for use in the Chandrayaan-1 X-ray Spectrometer (C1XS). C1XS, launched onboard Chandrayaan-1, was designed to detect the X-ray fluorescence, caused by solar flares, from the lunar surface. To ensure the instrument was a success a radiation damage study was performed, making recommendations on device operating conditions, instrument design and the future development of the SCD. A full device characterisation and the assistance provided to the C1XS science teamare also discussed

Proton damage comparison of an e2v technologies n-channel and p-channel CCD204

Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimized using a trap pumping technique to identify the optimal operating conditions at 153 K

Radiation damage analysis of the swept charge device for the C1XS instrument

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis is concerned with ensuring high energy resolution from the swept charge device (SCD) CCD54, essentially a non-pixellated version of the charge coupled device (CCD), for use in the Chandrayaan-1 X-ray Spectrometer (C1XS). Of particular interest is the effect on performance due to the radiation damage, caused by protons, the CCD54s used in C1XS will receive during the transfer to the Moon and during the two years in lunar orbit. Chapter 2 reviews the atomic structure, the formation and detection of X-rays, and the operation of a CCD. Chapter 3 discusses the space radiation environment and the damaging effects it has on CCDs, for example increasing dark current and charge transfer inefficiency. Chapter 4 presents the basic laboratory equipment and procedure used during the experimental work, and details the initial optimisation and characterisation, the pre-flight characterisation of devices available for use in C1XS, the measurement of the depletion depth, and quantum efficiency of the CCD54. Chapter 5 details the results of the initial proton irradiation study, intended to demonstrate the ability of the CCD54 to provide excellent scientific data over the two years at the Moon. Chapter 6 describes a second irradiation study covering a more detailed investigation of the damage effects, investigating dark current, trap energy levels, and charge transfer inefficiency. Chapter 7 describes work conducted to assist the C1XS science team in the development of an X-ray fluorescence model, to be used with X-ray spectra provided by the X-ray solar monitor and the spectra detected by C1XS, to provide elemental abundance information of the lunar surface. It also presents the initial C1XS results from the Moon, and a brief comparison of the CCD54 with other semiconductor X-ray fluorescence detectors. Chapter 8 describes the final conclusions and recommendations for further work, including a study of the radiation damage effects during the two years at the Moon and the future development of SCD detectors for use in space

Evolution of proton-induced defects in a cryogenically irradiated p-channel CCD

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. This is attributed to the properties of the dominant charge-trapping defect species in p-channel silicon relative to the operating conditions of the CCD. However, precise knowledge of defect parameters is required in order to correct for any induced CTI. The method of single trap-pumping allows us to analyse the defect parameters to a degree of accuracy that cannot be achieved with other common defect analysis techniques such as deep-level transient spectroscopy (DLTS). We have analysed using this method the defect distribution in an e2v p-channel CCD204 irradiated with protons at cryogenic temperature (153K). The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases. The evolution of the defect distribution over time and through each anneal phase provides insight into defect interactions and mobility post-irradiation. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation testing

Importance of charge capture in interphase regions during readout of charge-coupled devices

The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

Optimisation of device clocking schemes to minimise the effects of radiation damage in charge-coupled devices

The European Space Agency Euclid mission aims to answer the question of how the universe originated through the mapping of the dark Universe. One method to investigate this geometry is to measure subtle changes in ellipticity using image sensors such as the charge-coupled device (CCD). However, the radiation environment in space plays a major part in the performance of CCD-based camera systems. When placed in space, a CCD becomes damaged by the radiation environment, and this can lead to a "smearing" of the charge, acting to change the ellipticity, and therefore, one must be able to separate the changes in ellipticity caused by radiation damage from those the mission aims to measure. To this end, the radiation-damage-induced shape changes require an in-depth investigation such that optimized operation can be achieved. A Monte Carlo simulation is being used to predict this impact, backed by experimental data from a detector formerly baselined for the mission. During the experimental study, an investigation was undertaken into the serial readout of the CCD to demonstrate an approach toward performance optimization through a consideration of the trap species involved. A change in the clocking scheme was found to result in a factor of 3 reduction in charge transfer inefficiency

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

The displacement damage hardness that can be achieved using p-channel charge-coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 protons cm-2. The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV / krad, determined by the reduction in full well capacity

Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing

Modelling charge transfer in a radiation damaged charge coupled device for Euclid

As electrons are transferred through a radiation damaged Charge Coupled Device (CCD), they may encounter traps in the silicon in which they will be captured and subsequently released. This capture and release of electrons can lead to a 'smearing' of the image. The dynamics of the trapping process can be described through the use of Shockley-Read-Hall theory, in which exponential time constants are used to determine the probability of capture and release. If subjected to a hostile radiation environment, such as in space where the dominant charged particle is the proton, these incident protons can cause displacement damage within the CCD and lead to the formation of stable trap sites. As the trap density increases, the trapping and release of signal electrons can have a major impact on the Charge Transfer Efficiency (CTE) to the detriment of device performance. As the science goals for missions become ever more demanding, such as those for the ESA Euclid and Gaia missions, the problem of radiation damage must be overcome. In order to gain a deeper understanding of the trapping process and the impact on device performance, a Monte Carlo simulation has been developed to model the transfer of charge in a radiation damaged CCD. This study investigates the various difficulties encountered when developing such a model: the incorporation of appropriate clocking mechanisms, the use of suitable trap parameters and their degeneracy, and the development of methods to model the charge storage geometry within a pixel through the use of three-dimensional Silvaco simulations