9,838 research outputs found

    Statistics of heat exchange between two resistors

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    We study energy flow between two resistors coupled by an arbitrary linear and lossless electric circuit. We show that the fluctuations of energy transferred between the resistors are determined by random scattering of photons on an effective barrier with frequency dependent transmission probability τ(ω)\tau(\omega). We express the latter in terms of the circuit parameters. Our results are valid in both quantum and classical regimes and for non-equilibrium electron distribution functions in the resistors.Comment: 7 pages, 4 figures. Published version. New figures added, discussion extende

    Effect of Nyquist Noise on the Nyquist Dephasing Rate in 2d Electron Systems

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    We measure the effect of externally applied broadband Nyquist noise on the intrinsic Nyquist dephasing rate of electrons in a two-dimensional electron gas at low temperatures. Within the measurement error, the phase coherence time is unaffected by the externally applied Nyquist noise, including applied noise temperatures of up to 300 K. The amplitude of the applied Nyquist noise from 100 MHz to 10 GHz is quantitatively determined in the same experiment using a microwave network analyzer.Comment: 5 pages, 4 figures. Author affiliation clarified; acknowledgements modified. Replacement reason clarifie

    Aharonov-Bohm ring with fluctuating flux

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    We consider a non-interacting system of electrons on a clean one-channel Aharonov-Bohm ring which is threaded by a fluctuating magnetic flux. The flux derives from a Caldeira-Leggett bath of harmonic oscillators. We address the influence of the bath on the following properties: one- and two-particle Green's functions, dephasing, persistent current and visibility of the Aharonov-Bohm effect in cotunneling transport through the ring. For the bath spectra considered here (including Nyquist noise of an external coil), we find no dephasing in the linear transport regime at zero temperature. PACS numbers: 73.23.-b, 73.23.Hk, 73.23.Ra, 03.65.YzComment: 17 pages, 8 figures. To be published in PRB. New version contains minor corrections and additional discussion suggested by referee. A simple introduction to the basics of dephasing can be found at http://iff.physik.unibas.ch/~florian/dephasing/dephasing.htm

    Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

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    Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance Rqh/e225.8R_{\rm q}\equiv h/e^2\approx 25.8 kΩ\Omega) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 kΩ\Omega. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, V1/2V_{1/2}, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, ΔV1/2\Delta V_{1/2}, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, ΔG\Delta G. The constant of proportionality is a function of the ratio of the junction and quantum resistances, R/RqR/R_{\rm q}, and it is a pure strong tunneling effect.Comment: LaTeX file + five postscript figure

    Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

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    We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 kΩ\Omega)1^{-1}. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

    Electron transport through interacting quantum dots

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    We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the interaction correction to the current depends logarithmically on temperature and voltage. We identify two different logarithmic regimes with the crossover between them occurring at energies of order of the inverse dwell time of electrons in the dot. We also analyze the frequency-dependent shot noise in chaotic quantum dots and elucidate its direct relation to interaction effects in mesoscopic electron transport.Comment: 21 pages, 4 figures. References added, discussion slightly extende

    Disorder-induced pseudodiffusive transport in graphene nanoribbons.

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    We study the transition from ballistic to diffusive and localized transport in graphene nanoribbons in the presence of binary disorder, which can be generated by chemical adsorbates or substitutional doping. We show that the interplay between the induced average doping (arising from the nonzero average of the disorder) and impurity scattering modifies the traditional picture of phase-coherent transport. Close to the Dirac point, intrinsic evanescent modes produced by the impurities dominate transport at short lengths giving rise to a regime analogous to pseudodiffusive transport in clean graphene, but without the requirement of heavily doped contacts. This intrinsic pseudodiffusive regime precedes the traditional ballistic, diffusive, and localized regimes. The last two regimes exhibit a strongly modified effective number of propagating modes and a mean free path which becomes anomalously large close to the Dirac point

    Dephasing at Low Temperatures

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    We discuss the significance and the calculation of dephasing at low temperatures. The particle is moving diffusively due to a static disorder configuration, while the interference between classical paths is suppressed due to the interaction with a dynamical environment. At high temperatures we may use the `white noise approximation' (WNA), while at low temperatures we distinguish the contribution of `zero point fluctuations' (ZPF) from the `thermal noise contribution' (TNC). We study the limitations of the above semiclassical approach and suggest the required modifications. In particular we find that the ZPF contribution becomes irrelevant for thermal motion.Comment: 4 pages, 1 figure, clearer presentatio

    Weak localization, Aharonov-Bohm oscillations and decoherence in arrays of quantum dots

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    Combining scattering matrix theory with non-linear σ\sigma-model and Keldysh technique we develop a unified theoretical approach enabling one to non-perturbatively study the effect of electron-electron interactions on weak localization and Aharonov-Bohm oscillations in arbitrary arrays of quantum dots. Our model embraces (i) weakly disordered conductors (ii) strongly disordered conductors and (iii) metallic quantum dots. In all these cases at T0T \to 0 the electron decoherence time is found to saturate to a finite value determined by the universal formula which agrees quantitatively with numerous experimental results. Our analysis provides overwhelming evidence in favor of electron-electron interactions as a universal mechanism for zero temperature electron decoherence in disordered conductors.Comment: 19 pages, 13 figures, invited paper, published in a special issue of Fiz. Nizk. Temp. (Kharkov) dedicated to Prof. Igor Kuli

    Interaction-Induced Quantum Dephasing in Mesoscopic Rings

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    Combining nonperturbative techniques with Monte Carlo simulations we demonstrate that quantum coherence effects for a particle on a ring are suppressed beyond a finite length LϕL_{\phi} even at zero temperature if the particle is coupled to a diffusive electron gas by means of long range Coulomb interaction. This length is consistent with LϕL_{\phi} derived from weak-localization-type of analysis.Comment: 4 revtex pages, 2 figure
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