Structural Control of the Horizontal Double Fixation of Oligothiophenes on Gold

Quaterthiophenes bearing one (1) or two (2) alkanethiol chains attached at the internal β-position of the outermost thiophene ring through a sulfide linkage have been synthesized. Cyclic voltammetric analysis of their electrochemical behavior in solution suggests that electrooxidation of the doubly substituted oligomer 2 leads to electrodeposition of a poly(disulfide) on the anode surface. Monolayers of 1 or 2 on gold surfaces have been investigated and characterized by cyclic voltammetry, ellipsometry, contact angle measurement, and X-ray photoelectron spectroscopy. The results of these investigations indicate that introduction of two thiol groups in the structure leads to double fixation of the oligothiophene chain with the main axis of the conjugated system oriented parallel to the surface. The effects of single versus double fixation of the quaterthiophene chain on the electrochemical properties and stability of the corresponding monolayers are discussed

Surface Functionalization by Monolayers of Immobilized Thiophene-based Linear pi-Conjugated Systems

Date du colloque&nbsp;: 10/2008</p

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction

In recent years there has been growing interest in the electronic properties of 'few layer' graphene films. Twisted layers, different stacking and register with the substrate result in remarkable unconventional couplings. These distinctive electronic behaviours have been attributed to structural differences, even if only a few structural determinations are available. Here we report the results of a structural study of bilayer graphene on the Si-terminated SiC(0001) surface, investigated using synchrotron radiation-based photoelectron diffraction and complemented by angle-resolved photoemission mapping of the electronic valence bands. Photoelectron diffraction angular distributions of the graphene C 1s component have been measured at different kinetic energies and compared with the results of multiple scattering simulations for model structures. The results confirm that bilayer graphene on SiC(0001) has a layer spacing of 3.48 Å and an AB (Bernal) stacking, with a distance between the C buffer layer and the first graphene layer of 3.24 Å. Our work generalises the use of a versatile and precise diffraction method capable to shed light on the structure of low-dimensional materials

En reconstruction mammaire : intérêt du dépistage du portage de Staphylococcus aureus dans la prévention de l’infection du site opératoire

National audienceThe incidence of prosthesis infections after breast reconstruction is of the order of 4% to 13% according to the literature. In surgical patients, Staphylococcus aureus (S. aureus) is the bacterial species most often responsible for surgical site infections. In cardiac surgery, screening for carriage of S. aureus and preoperative decontamination are carried out routinely before prosthetic surgery. We retrospectively reviewed data from patients at our institution between January 2011 and December 2013. Our series showed that the prosthesis infection rates were in the range of 5.92% in 2008 with an ISO rate of S. aureus 3.61%. Routine screening for prosthetic reconstructions was performed to assess the impact of preoperative decontamination patients in carriers of S. aureus. This screening was done in 381 patients: 17.8% of patients were carriers of S. aureus ; 11 patients have an ISO (or an incidence rate of 2.88%) ; 5 patients have an ISO S. aureus (an incidence of S. aureus ISO 1.3%). The introduction of the screening process, allowed a drop of 5.92% ISO rate at 1.46% with a passage of S. aureus SSI rates of 3, 60% to 0.72%. In the near future, studies are needed to confirm these encouraging results, to demonstrate the efficacy of preoperative decontamination in carriers of S. aureus patients before laying prosthesis

Electropolymerized Self-Assembled Monolayers of a 3,4-Ethylenedioxythiophene-Thiophene Hybrid System

Self-assembled monolayers (SAMs) of a conjugated bithiophenic system connected to an alkanethiol chain have been deposited on gold surface. The electroactive bithiophenic system involves a 3,4-ethylenedioxythiophene (EDOT) unit and a thiophene ring on which an alkanethiol is attached at the internal β-position via a sulfide linkage. The analysis of the structure of the SAMs by IR spectroscopy, ellipsometry, contact angle measurement and X-ray photoelectron spectroscopy (XPS) provides consistent results indicating compact monolayers in which the alkyl linkers are arranged in an almost vertical fashion while the bithiophenic-conjugated systems are essentially parallel to the surface. Cyclic voltammetry shows that application of a few potential scans to SAMs immersed in a medium containing only a supporting electrolyte leads to the typical electropolymerization curves while the CV of the electrooxized monolayer exhibits a reversible cyclic voltammogram characteristic of a stable electroactive extended conjugated system. The characterization of the electropolymerized monolayers by IR spectroscopy, ellipsometry, contact angle measurement, and XPS indicates compact monolayers. The analysis of the current voltage characteristics of the monolayers by conducting AFM before and after electrooxidation shows that the enhancement of the effective conjugation resulting from electropolymerization leads to a significant increase of the transport properties

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x