Coulomb interaction and ferroelectric instability of BaTiO3

Using first-principles calculations, the phonon frequencies at the $\Gamma$ point and the dielectric tensor are determined and analysed for the cubic and rhombohedral phases of BaTiO$_{3}$. The dipole-dipole interaction is then separated \`a la Cochran from the remaining short-range forces, in order to investigate their respective influence on lattice dynamics. This analysis highlights the delicate balance of forces leading to an unstable phonon in the cubic phase and demonstrates the extreme sensitivity of this close compensation to minute effective charge changes. Within our decomposition, the stabilization of the unstable mode in the rhombohedral phase or under isotropic pressure has a different origin.Comment: 9 pages, 4 tables, 1 figur

Ab initio phonon dispersion curves and interatomic force constants of barium titanate

The phonon dispersion curves of cubic BaTiO_3 have been computed within a first-principles approach and the results compared to the experimental data. The curves obtained are very similar to those reported for KNbO_3 by Yu and Krakauer [Phys. Rev. Lett. 74, 4067 (1995)]. They reveal that correlated atomic displacements along chains are at the origin of the ferroelectric instability. A simplified model illustrates that spontaneous collective displacements will occur when a dozen of aligned atoms are coupled. The longitudinal interatomic force constant between nearest neighbour Ti and O atoms is relatively weak in comparison to that between Ti atoms in adjacent cells. The small coupling between Ti and O displacements seems however necessary to reproduce a ferroelectric instability.Comment: 12 pages, 4 figure

Giant direct magnetoelectric effect in strained multiferroic heterostructures

The direct magnetoelectric (ME) effect mediated by lattice strains induced in a ferroelectric film by a ferromagnetic substrate is evaluated using first-principles-based calculations. To that end, the strain sensitivity of ferroelectric polarization and the film permittivity are calculated as a function of the in-plane biaxial strain for Pb(Zr0.52Ti0.48)O3 films under various depolarizing fields. It is found that the ME voltage coefficient varies nonmonotonically with this strain and may reach giant values exceeding 100 Vcm-1 Oe-1 over a strain range that can be controlled through the electrical boundary conditions.Comment: Accepted as a Rapid Communication by Phys.Rev.B (http://prb.aps.org/

Interfacial Magnetoelectric Coupling in Tri-component Superlattices

Using first-principles density functional theory, we investigate the interfacial magnetoelectric coupling in a tri-component superlattice composed of a ferromagnetic metal (FM), ferroelectric (FE), and normal metal (NM). Using Fe/FE/Pt as a model system, we show that a net and cumulative interfacial magnetization is induced in the FM metal near the FM/FE interface. A carefully analysis of the magnetic moments in Fe reveals that the interfacial magnetization is a consequence of a complex interplay of interfacial charge transfer, chemical bonding, and spin dependent electrostatic screening. The last effect is linear in the FE polarization, is switchable upon its reversal, and yields a substantial interfacial magnetoelectric coupling.Comment: 5 pages, 6 figure

Electron localization : band-by-band decomposition, and application to oxides

Using a plane wave pseudopotential approach to density functional theory we investigate the electron localization length in various oxides. For this purpose, we first set up a theory of the band-by-band decomposition of this quantity, more complex than the decomposition of the spontaneous polarization (a related concept), because of the interband coupling. We show its interpretation in terms of Wannier functions and clarify the effect of the pseudopotential approximation. We treat the case of different oxides: BaO, $\alpha$-PbO, BaTiO$_3$ and PbTiO$_3$. We also investigate the variation of the localization tensor during the ferroelectric phase transitions of BaTiO$_3$ as well as its relationship with the Born effective charges

Strong influence of the complex bandstructure on the tunneling electroresistance: A combined model and ab-initio study

The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic model for the electrostatic potential which is caused by the ferroelectric polarization. The TER ratio is investigated in dependence on the intrinsic polarization, the chemical potential, and the screening properties of the electrodes. A change of sign in the TER ratio is obtained for both barrier materials in dependence on the chemical potential. The inverse imaginary Fermi velocity describes the microscopic origin of this effect; it qualitatively reflects the variation and the sign reversal of the TER. The quantity of the imaginary Fermi velocity allows to obtain detailed information on the transport properties of FTJs by analyzing the complex bandstructure of the barrier material.Comment: quality of figures reduce

Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles

Based on recent advances in first-principles theory, we develop a general model of the band offset at metal/ferroelectric interfaces. We show that, depending on the polarization of the film, a pathological regime might occur where the metallic carriers populate the energy bands of the insulator, making it metallic. As the most common approximations of density functional theory are affected by a systematic underestimation of the fundamental band gap of insulators, this scenario is likely to be an artifact of the simulation. We provide a number of rigorous criteria, together with extensive practical examples, to systematically identify this problematic situation in the calculated electronic and structural properties of ferroelectric systems. We discuss our findings in the context of earlier literature studies, where the issues described in this work have often been overlooked. We also discuss formal analogies to the physics of polarity compensation at LaAlO3/SrTiO3 interfaces, and suggest promising avenues for future research.Comment: 29 pages, 23 figure