76 research outputs found

    STRUCTURES, PROPERTIES AND FUNCTIONALITIES OF MAGNETIC DOMAIN WALLS IN THIN FILMS, NANOWIRES AND ATOMIC CHAINS: MICROMAGNETIC AND AB INITIO STUDIES

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    Structures, properties and functionalities of magnetic domain walls in thin film, nanowires and atomic chains are studied by micromagnetic simulations and ab initio calculations in this dissertation. For magnetic domain walls in thin films, we computationally investigated the dynamics of one-dimensional domain wall line in ultrathin ferromagnetic film, and the exponent α = 1.24 ± 0.05 is obtained in the creep regime near depinning force, indicating the washboard potential model is supported by our simulations. Furthermore, the roughness, creep, depinning and flow of domain wall line with commonly existed substructures driven by magnetic field are also studied. Our simulation results demonstrate that substructures will decrease the roughness exponent ζ, increase the critical depinning force, and reduce the effective creep energy barrier. Current induced domain-wall substructure motion is also studied, which is found quite different from current induced domain wall motion. For magnetic domain walls in nanowires, field and current induced domain wall motion is studied, and some relevant spintronic devices are proposed based on micromagnetic simulations. Novel nanometer transverse-domain-wall-based logic elements, 360° domain wall generator and shift register are proposed. When spinpolarized current is applied, the critical current for domain wall depinning can be substantially reduced and conveniently tuned by controlling domain wall number in the pile-up at pinning site, in analogy to dislocation pile-up responsible for Hall-Petch effect in mechanical strength. Furthermore, threshold currents for domain wall depinning and transportation through circular geometry in planar nanowire induced by spin transfer torques and spin-orbit torques are theoretically calculated. In addition, magnetic vortex racetrack memory which combines both conceptions of magnetic vortex domain walls and racetrack is also proposed using micromagnetic simulations. For magnetic domain walls in Ni atomic chains, a truly magnetic domain wall structure and the single domain switching process are investigated by both ab initio studies and spin dynamics simulations. Spin moment softening effect caused by the hybridization effect between two spin channels is considered. The atomic domain wall as narrow as 4 atom-distance with slight spin moment softening effect indicates a relatively evident ballistic magnetoresistance effect, and the large EB indicates the strong stability of single domain state

    Active Disturbance Rejection Control of Thermal Power Unit Coordinated System based on Frequency Domain Analysis

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    For the multi-input and multi-output, strong-coupling nonlinear features of coordinated system for thermal power unit, it is difficult for traditional PID coordinated control scheme to meet the power grid demand which often participates in peak regulation and frequency modulation. In this paper, Inverse Nyquist array is employed to carry out frequency domain analysis of the plant model. Then Pseudo diagonalization is used to design the static decoupling compensation matrix of the system. Above on these, the linear active disturbance rejection controller of every channel in coordinated system can be designed repectively. Dynamic coupling and system unknown parts are observed by extended state observer of ADRC and is compensated to the system in time. The simulation tests show that the disturbance rejection results of the load and the main steam pressure for the coordinated control system under LADRC is better than that of PID control

    Origin of magnetism in γ-fesi\u3csub\u3e 2 \u3c/sub\u3e/si(111) nanostructures

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    Magnetism has recently been observed in nominally nonmagnetic iron disilicide in the form of epitaxial γ-FeSi2 nanostructures on Si(111) substrate. To explore the origin of the magnetism in γ-FeSi2/Si(111) nanostructures, we performed a systematic first-principles study based on density functional theory. Several possible factors, such as epitaxial strain, free surface, interface, and edge, were examined. The calculations show that among these factors, only the edge can lead to the magnetism in γ-FeSi2/Si(111) nanostructures. It is shown that magnetism exhibits a strong dependency on the local atomic structure of the edge. Furthermore, magnetism can be enhanced by creating multiple-step edges. In addition, the results also reveal that edge orientation can have a significant effect on magnetism. These findings, thus, provide insights into a strategy to tune the magnetic properties of γ-FeSi2/Si(111) nanostructures through controlling the structure, population, and orientation of the edges

    Lengthscale effects on exchange coupling in Co-Pt L10 + L12 nanochessboards

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    The Co-Pt nanochessboard is a quasi-periodic, nanocomposite tiling of L10 and L12 magnetic phases that offers a novel structure for the investigation of exchange coupling, relevant to permanent magnet applications. Periodicity of the tiling is controlled by the rate of cooling through the eutectoid isotherm, resulting in control over the L10-L12 exchange coupling. First order reversal curve analysis reveals a transition from partial coupling to nearly complete exchange-coupling in a Co40.2Pt59.8 nanochessboard structured alloy as the periodicity is reduced below the critical correlation length. Micromagnetic simulations give insights into how exchange coupling manifests in the tiling, and its impact on microscopic magnetization reversal mechanisms

    Structures, properties and functionalities of magnetic domain walls in thin films, nanowires and atomic chains: Micromagnetic and ab initio studies

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    Structures, properties and functionalities of magnetic domain walls in thin film, nanowires and atomic chains are studied by micromagnetic simulations and ab initio calculations in this dissertation. For magnetic domain walls in thin films, we computationally investigated the dynamics of one-dimensional domain wall line in ultrathin ferromagnetic film, and the exponent α = 1.24 +/- 0.05 is obtained in the creep regime near depinning force, indicating the washboard potential model is supported by our simulations. Furthermore, the roughness, creep, depinning and flow of domain wall line with commonly existed substructures driven by magnetic field are also studied. Our simulation results demonstrate that substructures will decrease the roughness exponent ζ, increase the critical depinning force, and reduce the effective creep energy barrier. Current induced domain-wall substructure motion is also studied, which is found quite different from current induced domain wall motion. For magnetic domain walls in nanowires, field and current induced domain wall motion is studied, and some relevant spintronic devices are proposed based on micromagnetic simulations. Novel nanometer transverse-domain-wall-based logic elements, 360° domain wall generator and shift register are proposed. When spin-polarized current is applied, the critical current for domain wall depinning can be substantially reduced and conveniently tuned by controlling domain wall number in the pile-up at pinning site, in analogy to dislocation pile-up responsible for Hall-Petch effect in mechanical strength. Furthermore, threshold currents for domain wall depinning and transportation through circular geometry in planar nanowire induced by spin transfer torques and spin-orbit torques are theoretically calculated. In addition, magnetic vortex racetrack memory which combines both conceptions of magnetic vortex domain walls and racetrack is also proposed using micromagnetic simulations. For magnetic domain walls in Ni atomic chains, a truly magnetic domain wall structure and the single domain switching process are investigated by both ab initio studies and spin dynamics simulations. Spin moment softening effect caused by the hybridization effect between two spin channels is considered. The atomic domain wall as narrow as 4 atom-distance with slight spin moment softening effect indicates a relatively evident ballistic magnetoresistance effect, and the large EB indicates the strong stability of single domain state

    An Agricultural Monitoring System Based on Wireless Sensor and Depth Learning Algorithm

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    The rise and development of the Internet of Things (IoT) have given birth to the frontier technology of the agricultural IoT, which marks the future trend in agriculture and the IoT. The agricultural IoT can be combined with Zigbee, a short-range wireless network technology for monitoring systems, to solve the excessively large planting area and other defects in agricultural production. Meanwhile, the modernization of planting and harvesting has set the stage for deep learning. Unlike the artificial neural network, the deep learning is an important intelligent algorithm, capable of solving many real-world problems. Therefore, this paper probes into the problems of modern automatic agriculture. First, the routing allocation technology and transmission mode were optimized to solve the energy consumption problem. Second, the classification model based on deep learning algorithm was put forward according to the application of the Wireless Sensor Network (WSN) in continuous monitoring of soil temperature and humidity. Despite the lack of upper soil humidity sensor in agriculture, the model can still classify the soil moisture of the nodes, and derive the main soil moisture content. Finally, a solution was presented based on agricultural ZigBee WSN technology. In addition to cheap cost and low power consumption, the solution has the functions of reminding and recognition due to the adoption of artificial intelligence algorithm. Suffice it to say that the solution is a successful attempt to integrate artificial intelligence and sensor technology into agricultural modernization

    An Agricultural Monitoring System Based on Wireless Sensor and Depth Learning Algorithm

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    Generation and storage of 360° domain walls in planar magnetic nanowires

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    360° domain walls in planar magnetic nanowires are studied by micromagnetic simulations. It is shown that a nanowire loop with a shape-isotropic wall generator at one end and a shape-anisotropic wall stopper at the other end functions like a data storage stack: 360° domain walls are generated and pushed into stack under rotating field before overflow while popped out and annihilated when field rotating direction is inverted until underflow. The stack capacity is determined by total nanowire loop length. This simple nanowire structure can be integrated into magnetic circuits as an operation unit for 360° domain wall generation and storage
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