Highly efficient multilayer organic pure-blue-light emitting diodes with substituted carbazoles compounds in the emitting layer

Bright blue organic light-emitting diodes (OLEDs) based on 1,4,5,8,N-pentamethylcarbazole (PMC) and on dimer of N-ethylcarbazole (N,N'-diethyl-3,3'-bicarbazyl) (DEC) as emitting layers or as dopants in a 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl (DPVBi) matrix are described. Pure blue-light with the C.I.E. coordinates x = 0.153 y = 0.100, electroluminescence efficiency \eta_{EL} of 0.4 cd/A, external quantum efficiency \eta_{ext.} of 0.6% and luminance L of 236 cd/m2 (at 60 mA/cm2) were obtained with PMC as an emitter and the 2,9-dimethyl-4,7-diphenyl-1,10-phenantroline (BCP) as a hole-blocking material in five-layer emitting devices. The highest efficiencies \eta_{EL.} of 4.7 cd/A, and \eta_{ext} = 3.3% were obtained with a four-layer structure and a DPVBi DEC-doped active layer (CIE coordinates x = 0.158, y=0.169, \lambda_{peak} = 456 nm). The \eta_{ext.} value is one the highest reported at this wavelength for blue OLEDs and is related to an internal quantum efficiency up to 20%

All solution-processed organic photocathodes with increased efficiency and stability via the tuning of the hole-extracting layer †

International audiencePhotoelectrodes based on solution-processed organic semiconductors are emerging as low-cost alternatives to crystalline semiconductors and platinum. In this work, the performance and stability of P3HT:PCBM\MoS 3-based photocathodes are considerably improved by changing the hole-extracting layer (HEL). Oxides such as reduced graphene oxide, nickel oxide or molybdenum oxide are deposited via solution processes. With MoO x , a photocurrent density of 2 mA cm À2 during 1 h is obtained with the processing temperature lower than 150 C – thus compatible with flexible substrates. Furthermore, we show that the performances are directly correlated with the work function of the HEL material, and the comparison with solid-state solar cells shows that efficient HELs are not the same for the two types of devices

Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers

One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiNx) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~100°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximumion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiNx single layers, a minimum WVTR of 5 × 10−4 g/(m2 day), measured at room temperature, was found for a maximum ion energy of ~30 eV. This minimum WVTR value was reduced to 7 × 10−5 g/(m2 day) for a stack of five SiNx single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy.The authors are grateful to Dr. R. Cortes (PMC, Ecole Polytechnique) for XRR analysis, to Dr. P. Chapon (HORIBA Jobin Yvon) for GD-OES analysis and Dr. J. Leroy (CEA Saclay) for XPS analysis. This work was partly supported by the PICS (FrenchPortuguese) project No. 5336. One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support

The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layers

In this work we produce and study silicon nitride (SiNx) thin films deposited by Hot Wire Chemical Vapor Depo- sition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on poly- ethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiNx double-layers and on the equivalent double-layer stack where an Ar-plasma surface treatment was performed on the first SiNx layer. The Ar-plasma treatment may under certain conditions influences the structure of the interface between the two subsequent layers and thus the barrier properties of the whole system. We focus our attention on the effect of plasma treatment time on the final barrier properties. We assess the encapsulation barrier properties of these layers, using the calcium degradation test where changes in the electrical conductance of encapsulated Ca sensors are monitored with time. The water vapor transmission rate (WVTR) is found to be ~3 × 10−3 g/m2·day for stacked SiNx double-layer with 8 min Ar plasma surface treatment.FCT - CNRS PICS (French–Portuguese no: 5336) projectDirection des Relations Extérieures, Ecole Polytechniqu

Red-emitting fluorescent Organic Light emitting Diodes with low sensitivity to self-quenching

International audienceConcentration quenching is a major impediment to efficient organic light-emitting devices. We herein report on Organic Light-Emitting Diodes (OLEDs) based on a fluorescent amorphous red-emitting starbust triarylamine molecule (4-di(4'-tert-butylbiphenyl-4-yl)amino-4'-dicyanovinylbenzene, named FVIN), exhibiting a very small sensitivity to concentration quenching. OLEDs are fabricated with various doping levels of FVIN into Alq3, and show a remarkably stable external quantum efficiency of 1.5% for doping rates ranging from 5% up to 40%, which strongly relaxes the technological constraints on the doping accuracy. An efficiency of 1% is obtained for a pure undoped active region, along with deep red emission (x=0.6; y=0.35 CIE coordinates). A comparison of FVIN with the archetypal DCM dye is presented in an identical multilayer OLED structure

Doped and non-doped organic light-emitting diodes based on a yellow carbazole emitter into a blue-emitting matrix

A new carbazole derivative with a 3,3'-bicarbazyl core 6,6'-substituted by dicyanovinylene groups (6,6'-bis(1-(2,2'-dicyano)vinyl)-N,N'-dioctyl-3,3'-bicarbazyl; named (OcCz2CN)2, was synthesized by carbonyl-methylene Knovenagel condensation, characterized and used as a component of multilayer organic light-emitting diodes (OLEDs). Due to its -donor-acceptor type structure, (OcCz2CN)2 was found to emit a yellow light at max=590 nm (with the CIE coordinates x=0.51; y = 0.47) and was used either as a dopant or as an ultra-thin layer in a blue-emitting matrix of 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl (DPVBi). DPVBi (OcCz2CN)2-doped structure exhibited, at doping ratio of 1.5 weight %, a yellowish-green light with the CIE coordinates (x = 0.31; y = 0.51), an electroluminescence efficiency EL=1.3 cd/A, an external quantum efficiency ext= 0.4 % and a luminance L= 127 cd/m2 (at 10 mA/cm2) whereas for non-doped devices utilizing the carbazolic fluorophore as a thin neat layer, a warm white with CIE coordinates (x = 0.40; y= 0.43), EL= 2.0 cd/A, ext= 0.7 %, L = 197 cd/m2 (at 10 mA/cm2) and a color rendering index (CRI) of 74, were obtained. Electroluminescence performances of both the doped and non-doped devices were compared with those obtained with 5,6,11,12-tetraphenylnaphtacene (rubrene) taken as a reference of highly efficient yellow emitter

MICROMEGAS chambers for hadronic calorimetry at a future linear collider

Prototypes of MICROMEGAS chambers, using bulk technology and analog readout, with 1x1cm2 readout segmentation have been built and tested. Measurements in Ar/iC4H10 (95/5) and Ar/CO2 (80/20) are reported. The dependency of the prototypes gas gain versus pressure, gas temperature and amplification gap thickness variations has been measured with an 55Fe source and a method for temperature and pressure correction of data is presented. A stack of four chambers has been tested in 200GeV/c and 7GeV/c muon and pion beams respectively. Measurements of response uniformity, detection efficiency and hit multiplicity are reported. A bulk MICROMEGAS prototype with embedded digital readout electronics has been assembled and tested. The chamber layout and first results are presented