Reconfigurable Phase-Change Metasurface Absorbers for Optoelectronics Device Applications

This thesis is concerned with the design and development of dynamically reconfigurable optical metasurfaces. This reconfigurability is achieved by integrating chalcogenide phase-change materials with plasmonic resonator structures of the metal-insulator-metal type. Switching the phase-change material between its amorphous and crystalline states results in dramatic changes in its optical properties, with consequent dramatic changes in the resonant behaviour of the plasmonic metasurface with which it is integrated. Moreover, such changes are non-volatile, reversible and potentially very fast, in the order of nanoseconds. The first part of the thesis is dedicated to the design, fabrication and characterisation of metasurface devices working at telecommunications wavelengths, specifically at wavelengths corresponding to the C-band (1530 to 1565 nm), and that act as a form of perfect absorber when the phase-change layer (in this case Ge2Sb2Te5) is amorphous but reflect strongly when switched to the crystalline state. Such behaviour can be used, for example, to provide a form of optical amplitude modulator. Fabricated devices not only showed very good performance, including a large modulation depth of ~77% and an extinction ratio of ~20 dB, but also incorporated a number of practicable design features often overlooked in the literature, including a means for protecting the phase-change layer from environmental oxidation and, importantly, an electrically-driven in-situ switching capability. In the second part of the thesis a method, based on eigenmode analysis and critical coupling theory, is developed to allow for the design and fabrication of perfect absorber type devices in a simple and efficient way, while at the same time maintaining design control over the key performance characteristics of resonant frequency, reflection coefficient at resonance and quality factor. Validation of this new method was carried out via the design and fabrication of a family of absorbers with a range of ‘on-demand’ quality factors, all operating at the same resonant frequency and able to be fabricated simply and simultaneously on the same chip. The final part of the thesis is concerned with the design and development of a switchable phase-change metamaterial type absorber working in the visible part of the spectrum and with non-volatile colour generating capability. With the phase-change layer, here GeTe, in the crystalline phase, the absorber can be tuned to selectively absorb the red, green and blue spectral bands, so generating vivid cyan, magenta and yellow pixels. When the phase-change layer is switched into the amorphous phase, the resonant absorption is suppressed and a flat, pseudo-white reflectance results. This potentially opens up a route to the development of non-volatile, phase-change metamaterial colour displays and colour electronic signage.Engineering and Physical Sciences Research Council (EPSRC

A plasmonic route towards the energy scaling of on-chip integrated all-photonic phase-change memories

This is the author accepted manuscript.Phase-change photonic memory devices, conventionally implemented as a thin layer of phase-change material deposited on the top of an integrated Si or SiN waveguide, have the flexibility to be applied in a widely diverse context, as a pure memory device, a logic gate, an arithmetic processing unit and for biologically inspired computing. In all such applications increasing the speed, and reducing the power consumption, of the phase-switching process is most desirable. In this work, therefore, we investigate, via simulation, a novel integrated photonic device architecture that exploits plasmonic effects to enhance the light-matter interaction. Our device comprises a dimer nanoantenna fabricated on top of a SiN waveguide and with a phase-change material deposited into the gap between the two nanoantenna halves. We observed very considerably increased device speeds and reduced energy requirements, of up to two orders of magnitude, when compared to the conventional structure.Engineering and Physical Sciences Research Council (EPSRC

Plasmonically-enhanced all-optical integrated phase-change memory

This is the final version. Available on open access from the Optical Society of America via the DOI in this record.Integrated phase-change photonic memory devices offer a novel route to non-volatile storage and computing that can be carried out entirely in the optical domain, obviating the necessity for time and energy consuming opto-electrical conversions. Such memory devices generally consist of integrated waveguide structures onto which are fabricated small phase-change memory cells. Switching these cells between their amorphous and crystalline states modifies significantly the optical transmission through the waveguide, so providing memory, and computing, functionality. To carry out such switching, optical pulses are sent down the waveguide, coupling to the phase-change cell, heating it up, and so switching it between states. While great strides have been made in the development of integrated phase-change photonic devices in recent years, there is always a pressing need for faster switching times, lower energy consumption and a smaller device footprint. In this work, therefore, we propose the use of plasmonic enhancement of the light-matter interaction between the propagating waveguide mode and the phase-change cell as a means to faster, smaller and more energy-efficient devices. In particular, we propose a form of plasmonic dimer nanoantenna of significantly sub-micron size that, in simulations, offers significant improvements in switching speeds and energies. Write/erase speeds in the range 2 to 20 ns and write/erase energies in the range 2 to 15 pJ were predicted, representing improvements of one to two orders of magnitude when compared to conventional device architectures.Engineering and Physical Sciences Research Council (EPSRC

Simple technique for determining the refractive index of phase-change materials using near-infrared reflectometry

This is the final version. Available on open access from the Optical Society via the DOI in this recordPhase-change materials, such as the well-known ternary alloy Ge2Sb2Te5, are essential to many types of photonic devices, from re-writeable optical disk memories to more recent developments such as phase-change displays, reconfigurable optical metasurfaces, and integrated phase-change photonic devices and systems. The successful design and development of such applications and devices requires accurate knowledge of the complex refractive index of the phase-change material being used. To this end, it is common practice to rely on published experimental refractive index data. However, published values can vary quite significantly for notionally the same composition, no doubt due to variations in fabrication/deposition processes. Rather than rely on published data, a more reliable approach to index determination is to measure the properties of as-fabricated films, and this is usually carried out using specialized and dedicated ellipsometric equipment. In this paper, we propose a simple and effective alternative to ellipsometry, based on spectroscopic reflectance measurements of Fabry–Perot phase-change nanocavities. We describe this alternative approach in detail, apply it to measurement of the complex index of the archetypal phase-change materials Ge2Sb2Te5 and GeTe, and compare the results to those obtained using conventional ellipsometry, where we find good agreement.Engineering and Physical Sciences Research Council (EPSRC)European Union Horizon 2020Science and Technology Facilities Council (STFC

Sub-wavelength plasmonic-enhanced phase-change memory

This is the author accepted manuscript. The final version is available from the Society of Photo-optical Instrumentation Engineers via the DOI in this record The Ge2Sb2Te5 phase-change alloy (GST) is known for its dramatic complex refractive index (and electrical) contrast between its amorphous and crystalline phases. Switching between such phases is also non-volatile and can be achieved on the nanosecond timescale. The combination of GST with the widespread SiN integrated optical waveguide platform led to the proposal of the all-optical integrated phase-change memory, which exploits the interaction of the guided mode evanescent field with a thin layer of GST on the waveguide top surface. The relative simplicity of the architecture allows for its flexible application for data storage, logic gating, arithmetic and neuromorphic computing. Read operation relies on the transmitted signal optical attenuation, due to the GST extinction coefficient. Write/erase operations are performed via the same optical path, with a higher power ad-hoc pulsing scheme, which locally increases the temperature and triggers either the melt-quench process (write) or recrystallization (erase), encoding the information into the GST crystal fraction. Here we investigate the physical mechanisms involved in the write/erase and read processes via computational methods, with the view to explore novel architecture concepts that improve memory speed, energy efficiency and density. We show the achievements of the development of a 3D simulation framework, performing self-consistent calculations for wavepropagation, heat diffusion and phase-transition processes. We illustrate a viable memory optimization route, which adopts sub-wavelength plasmonic dimer nanoantenna structures to harvest the optical energy and maximize light-matter interaction. We calculate both a speed and energy efficiency improvement of around one order of magnitude, with respect to the conventional (non-plasmonic) device architecture.European CommissionEngineering and Physical Sciences Research Council (EPSRC)Deutsche Forschungsgemeinschaf

Detection of kinase domain mutations in BCR::ABL1 leukemia by ultra-deep sequencing of genomic DNA

The screening of the BCR::ABL1 kinase domain (KD) mutation has become a routine analysis in case of warning/failure for chronic myeloid leukemia (CML) and B-cell precursor acute lymphoblastic leukemia (ALL) Philadelphia (Ph)-positive patients. In this study, we present a novel DNA-based next-generation sequencing (NGS) methodology for KD ABL1 mutation detection and monitoring with a 1.0E−4 sensitivity. This approach was validated with a well-stablished RNA-based nested NGS method. The correlation of both techniques for the quantification of ABL1 mutations was high (Pearson r = 0.858, p < 0.001), offering DNA-DeepNGS a sensitivity of 92% and specificity of 82%. The clinical impact was studied in a cohort of 129 patients (n = 67 for CML and n = 62 for B-ALL patients). A total of 162 samples (n = 86 CML and n = 76 B-ALL) were studied. Of them, 27 out of 86 harbored mutations (6 in warning and 21 in failure) for CML, and 13 out of 76 (2 diagnostic and 11 relapse samples) did in B-ALL patients. In addition, in four cases were detected mutation despite BCR::ABL1 < 1%. In conclusion, we were able to detect KD ABL1 mutations with a 1.0E−4 sensitivity by NGS using DNA as starting material even in patients with low levels of disease.Tis project was funded in part by CRIS CANCER FOUNDATION

Constraints on the χ_(c1) versus χ_(c2) polarizations in proton-proton collisions at √s = 8 TeV

The polarizations of promptly produced χ_(c1) and χ_(c2) mesons are studied using data collected by the CMS experiment at the LHC, in proton-proton collisions at √s=8  TeV. The χ_c states are reconstructed via their radiative decays χ_c → J/ψγ, with the photons being measured through conversions to e⁺e⁻, which allows the two states to be well resolved. The polarizations are measured in the helicity frame, through the analysis of the χ_(c2) to χ_(c1) yield ratio as a function of the polar or azimuthal angle of the positive muon emitted in the J/ψ → μ⁺μ⁻ decay, in three bins of J/ψ transverse momentum. While no differences are seen between the two states in terms of azimuthal decay angle distributions, they are observed to have significantly different polar anisotropies. The measurement favors a scenario where at least one of the two states is strongly polarized along the helicity quantization axis, in agreement with nonrelativistic quantum chromodynamics predictions. This is the first measurement of significantly polarized quarkonia produced at high transverse momentum