This is the author accepted manuscript.Phase-change photonic memory devices, conventionally implemented as a thin layer of phase-change material deposited on the top of an integrated Si or SiN waveguide, have the flexibility to be applied in a widely diverse context, as a pure memory device, a logic gate, an arithmetic processing unit and for biologically inspired computing. In all such applications increasing the speed, and reducing the power consumption, of the phase-switching process is most desirable. In this work, therefore, we investigate, via simulation, a novel integrated photonic device architecture that exploits plasmonic effects to enhance the light-matter interaction. Our device comprises a dimer nanoantenna fabricated on top of a SiN waveguide and with a phase-change material deposited into the gap between the two nanoantenna halves. We observed very considerably increased device speeds and reduced energy requirements, of up to two orders of magnitude, when compared to the conventional structure.Engineering and Physical Sciences Research Council (EPSRC
