Third-Harmonic and intermodulation distortion in bulk acoustic-wave resonators

This article discusses on the measured third-order intermodulation (IMD3) products and third harmonics (H3) appearing in a set of six different solidly mounted resonators (SMR) and bulk acoustic-wave (BAW) resonators with different shapes and stack configurations. The discussion is supported by a comprehensive nonlinear distributed circuit model that considers the nonlinear effects potentially occurring in any layer of the resonator stack. The aluminum-nitride (AlN) and silicon-dioxide (SiO2) layers are identified as the most significant contributors to the IMD3 and H3. The frequency profile of the third-order spurious signals also reveals that, in temperature-compensated resonators, where the SiO2 layers are usually thicker, the remixing effects from the second-order nonlinear terms are the major contributors to the IMD3 and H3. These second-order terms are those that explain the second-harmonic (H2) generation, whose measurements are also reported in this article. Unique values of the nonlinear material constants can explain all the measurements despite the resonators have different shapes, resonance frequencies, and stack configurations.Peer ReviewedPostprint (author's final draft

Critical interculturality, socio-linguistic theory and equity. The extraordinary story of a young offender

En este artículo se analiza cómo las personas que nacen y se educan en contextos desfavorecidos se socializan en una cultura y unos códigos que limitan sus posibilidades de desarrollo. Para profundizar sobre dicha cuestión consideramos un fragmento de la historia de vida de Samir Almasi1, un menor infractor que se convirtió en educador de menores tras cumplir un proceso de reforma juvenil. Una de las claves para que se produjese aquel extraordinario cambio fue que durante su infancia había adquirido una cultura que le permitía desenvolverse adecuadamente en cualquier entorno, no sólo en su contexto de origen. Aquella situación resultaba llamativa, porque la mayoría de sus compañeros en el centro de internamiento de menores infractores, no pudieron evolucionar tan favorablemente como él porque manejaban unos lenguajes de interacción, sobre todo comportamentales, muy alejados de los demandados por la sociedad. Hacemos una analogía de esa situación utilizando los códigos restringidos de la teoría socio-lingüística de Bernstein. Los resultados muestran que las personas que han experimentado una socialización limitante sufren una situación determinista que dificulta su emancipación fuera de su ambiente primario. Desde una perspectiva crítica intercultural se reivindica la de-construcción de las causas que generan esa situación y garantizar el desarrollo cultural de todas las personas, fundamentalmente, quienes proceden de entornos deprimidos culturalmente, en pos de una verdadera igualdad de oportunidades y de una sociedad inclusiva; ello debe ser una de las pretensiones de la educación obligatoria y públicaThis article discusses how people raised in disadvantaged contexts are socialized by specific cultural codes that limit their development. To illustrate it, a fragment of Samir Almasi's life history is presented. He was a minor offender who became an educator after a process of juvenile justice reform. One of the fundamental key related to this extraordinary change was the fact that during his childhood he had acquired a culture that allowed him to function adequately in any social environment, not only in his context of origin. Most of his colleagues in the centre of internment of juvenile offenders could not react and develop alike because they were socialized in specific languages of interaction, and behaviour not accepted by the majoritarian society. We make an analogy of that situation using the “restricted codes” notion from Bernstein's socio-linguistic theory. The results show that people who has experienced a culturally limited socialization makes emancipation unreachable outside of their primary environment. From a critical intercultural perspective, we argue that it is necessary to analyse the determinant factors of this unequal situation. Likewise, we argue for the acquisition of a minimum culture for all people, fundamentally, those from culturally depressed environments, in pursuit of a true equal opportunities and an inclusive society. The public education must be a guarantee of this cultural righ

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped

Far infrared photoconductivity in a silicon based material: vanadium supersaturated silicon

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory

Experimental verification of intermediate band formation on titanium-implanted silicon

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current

Intermediate band solar cells. The transition metal supersaturated Silicon approach

Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency

The intermediate band approach in the third solar cell generation context

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application

Concealed by darkness: interactions between predatory bats and nocturnally migrating songbirds illuminated by DNA sequencing

Recently, several species of aerial-hawking bats have been found to prey on migrating songbirds, but details on this behaviour and its relevance for bird migration are still unclear. We sequenced avian DNA in feather-containing scats of the bird-feeding bat Nyctalus lasiopterus from Spain collected during bird migration seasons. We found very high prey diversity, with 31 bird species from eight families of Passeriformes, almost all of which were nocturnally flying sub-Saharan migrants. Moreover, species using tree hollows or nest boxes in the study area during migration periods were not present in the bats’ diet, indicating that birds are solely captured on the wing during night-time passage. Additional to a generalist feeding strategy, we found that bats selected medium-sized bird species, thereby assumingly optimizing their energetic cost-benefit balance and injury risk. Surprisingly, bats preyed upon birds half their own body mass. This shows that the 5% prey to predator body mass ratio traditionally assumed for aerial hunting bats does not apply to this hunting strategy or even underestimates these animals’ behavioural and mechanical abilities. Considering the bats’ generalist feeding strategy and their large prey size range, we suggest that nocturnal bat predation may have influenced the evolution of bird migration strategies and behaviour.Peer Reviewe