RD-VIO: Robust Visual-Inertial Odometry for Mobile Augmented Reality in Dynamic Environments

It is typically challenging for visual or visual-inertial odometry systems to handle the problems of dynamic scenes and pure rotation. In this work, we design a novel visual-inertial odometry (VIO) system called RD-VIO to handle both of these two problems. Firstly, we propose an IMU-PARSAC algorithm which can robustly detect and match keypoints in a two-stage process. In the first state, landmarks are matched with new keypoints using visual and IMU measurements. We collect statistical information from the matching and then guide the intra-keypoint matching in the second stage. Secondly, to handle the problem of pure rotation, we detect the motion type and adapt the deferred-triangulation technique during the data-association process. We make the pure-rotational frames into the special subframes. When solving the visual-inertial bundle adjustment, they provide additional constraints to the pure-rotational motion. We evaluate the proposed VIO system on public datasets. Experiments show the proposed RD-VIO has obvious advantages over other methods in dynamic environments

Nanoscale friction on MoS2/graphene heterostructures

Stacked hetero-structures of two-dimensional materials allow for a design of interactions with corresponding electronic and mechanical properties. We report structure, work function, and frictional properties of 1 to 4 layers of MoS2 grown by chemical vapor deposition on epitaxial graphene on SiC(0001). Experiments were performed by atomic force microscopy in ultra-high vacuum. Friction is dominated by adhesion which is mediated by a deformation of the layers to adapt the shape of the tip apex. Friction decreases with increasing number of MoS2 layers as the bending rigidity leads to less deformation. The dependence of friction on applied load and bias voltage can be attributed to variations in the atomic potential corrugation of the interface, which is enhanced by both load and applied bias. Minimal friction is obtained when work function differences are compensated

2D van der waals heterojunction of organic and inorganic monolayers for high responsivity phototransistors

Van der Waals (vdW) heterostructures composing of organic molecules with inorganic 2D crystals open the door to fabricate various promising hybrid devices. Here, a fully ordered organic self‐assembled monolayer (SAM) to construct hybrid organic–inorganic vdW heterojunction phototransistors for highly sensitive light detection is used. The heterojunctions, formed by layering MoS 2 monolayer crystals onto organic [12‐(benzo[b]benzo[4,5]thieno[2,3‐d]thiophen‐2‐yl)dodecyl)]phosphonic acid SAM, are characterized by Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy. Remarkably, this vdW heterojunction transistor exhibits a superior photoresponsivity of 475 A W −1 and enhanced external quantum efficiency of 1.45 × 10 5 %, as well as an extremely low dark photocurrent in the pA range. This work demonstrates that hybridizing SAM with 2D materials can be a promising strategy for fabricating diversified optoelectronic devices with unique properties

High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric

Abstract Trap states of the semiconductor/gate dielectric interface give rise to a pronounced subthreshold behavior in field‐effect transistors (FETs) diminishing and masking intrinsic properties of 2D materials. To reduce the well‐known detrimental effect of SiO 2 surface traps, this work spin‐coated an ultrathin (≈5 nm) cyclic olefin copolymer (COC) layer onto the oxide and this hydrophobic layer acts as a surface passivator. The chemical resistance of COC allows to fabricate monolayer MoS 2 FETs on SiO 2 by standard cleanroom processes. This way, the interface trap density is lowered and stabilized almost fivefold, to around 5 × 10 11 cm −2 eV −1 , which enables low‐voltage FETs even on 300 nm thick SiO 2 . In addition to this superior electrical performance, the photoresponsivity of the MoS 2 devices on passivated oxide is also enhanced by four orders of magnitude compared to nonpassivated MoS 2 FETs. Under these conditions, negative photoconductivity and a photoresponsivity of 3 × 10 7 A W −1 is observed which is a new highest value for MoS 2 . These findings indicate that the ultrathin COC passivation of the gate dielectric enables to probe exciting properties of the atomically thin 2D semiconductor, rather than interface trap dominated effects.High‐performance monolayer MoS 2 ‐based electronic and optoelectronic devices are fabricated on SiO 2 gate dielectric passivated with cyclic olefin copolymer. The passivation eliminates the interaction with interface trap states which are detrimental for the electronic and optoelectronic performance of the devices. imag

Charge-state-enhanced ion sputtering of metallic gold nanoislands

Experimental results on the charge-state-dependent sputtering of metallic gold nanoislands are presented. Irradiations with slow highly charged ions of metallic targets were previously considered to show no charge state dependent effects on ion-induced material modification, since these materials possess enough free electrons to dissipate the deposited potential energy before electron-phonon coupling can set in. By reducing the size of the target material down to the nanometer regime and thus enabling a geometric energy confinement, a possibility is demonstrated to erode metallic surfaces by charge state related effects in contrast to regular kinetic sputtering

Spin-valley coupling and spin-relaxation anisotropy in all-CVD Graphene- MoS2 van der Waals heterostructure

Two-dimensional (2D) van der Waals (vdW) heterostructures fabricated by combining 2D materials with unique properties into one ultimate unit can offer a plethora of fundamental phenomena and practical applications. Recently, proximity-induced quantum and spintronic effects have been realized in heterostructures of graphene (Gr) with 2D semiconductors and their twisted systems. However, these studies are so far limited to exfoliated flake-based devices, limiting their potential for scalable practical applications. Here, we report spin-valley coupling and spin-relaxation anisotropy in Gr-MoS2 heterostructure devices prepared from scalable chemical vapor-deposited (CVD) 2D materials. Spin precession and dynamics measurements reveal an enhanced spin-orbit coupling strength in the Gr-MoS2 heterostructure in comparison with pristine Gr at room temperature. Consequently, large spin-relaxation anisotropy is observed in the heterostructure, providing a method for spin filtering due to spin-valley coupling. These findings open a scalable platform for all-CVD 2D vdW heterostructures design and their device applications

1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis

Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p–n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe2-WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self-powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH Gmb