Cryogenic Characterization of Commercial SiC Power MOSFETs

The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 20 K with both positive and negative changes in behaviour.</p

Exploring smart grid possibilities: a complex systems modelling approach

Smart grid research has tended to be compartmentalised, with notable contributions from economics, electrical engineering and science and technology studies. However, there is an acknowledged and growing need for an integrated systems approach to the evaluation of smart grid initiatives. The capacity to simulate and explore smart grid possibilities on various scales is key to such an integrated approach but existing models – even if multidisciplinary – tend to have a limited focus. This paper describes an innovative and flexible framework that has been developed to facilitate the simulation of various smart grid scenarios and the interconnected social, technical and economic networks from a complex systems perspective. The architecture is described and related to realised examples of its use, both to model the electricity system as it is today and to model futures that have been envisioned in the literature. Potential future applications of the framework are explored, along with its utility as an analytic and decision support tool for smart grid stakeholders

Full coherent control of nuclear spins in an optically pumped single quantum dot

Highly polarized nuclear spins within a semiconductor quantum dot (QD) induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin or up to a few hundred mT for the hole spin. Recently this has been recognized as a resource for intrinsic control of QD-based spin quantum bits. However, only static long-lived Overhauser fields could be used. Here we demonstrate fast redirection on the microsecond time-scale of Overhauser fields of the order of 0.5 T experienced by a single electron spin in an optically pumped GaAs quantum dot. This has been achieved using full coherent control of an ensemble of 10^3-10^4 optically polarized nuclear spins by sequences of short radio-frequency (rf) pulses. These results open the way to a new class of experiments using rf techniques to achieve highly-correlated nuclear spins in quantum dots, such as adiabatic demagnetization in the rotating frame leading to sub-micro K nuclear spin temperatures, rapid adiabatic passage, and spin squeezing

Auxetic piezoelectric effect in heterostructures

Inherent symmetry breaking at the interface has been fundamental to a myriad of physical effects and functionalities, such as efficient spin–charge interconversion, exotic magnetic structures and an emergent bulk photovoltaic effect. It has recently been demonstrated that interface asymmetry can induce sizable piezoelectric effects in heterostructures, even those consisting of centrosymmetric semiconductors, which provides flexibility to develop and optimize electromechanical coupling phenomena. Here, by targeted engineering of the interface symmetry, we achieve piezoelectric phenomena behaving as the electrical analogue of the negative Poisson’s ratio. This effect, termed the auxetic piezoelectric effect, exhibits the same sign for the longitudinal (d33) and transverse (d31, d32) piezoelectric coefficients, enabling a simultaneous contraction or expansion in all directions under an external electrical stimulus. The signs of the transverse coefficients can be further tuned via in-plane symmetry anisotropy. The effects exist in a wide range of material systems and exhibit substantial coefficients, indicating potential implications for all-semiconductor actuator, sensor and filter applications

Thermal characterization of direct wafer bonded Si-on-SiC

Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations to characterize the thermal properties of direct bonded Si-on-4H–SiC samples, utilizing a hydrophobic and hydrophilic bonding process. In both instances, the interface has good thermal properties resulting in TBReff values of 6 + 4/−2 m2 K GW−1 (hydrophobic) and 9 + 3/−2 m2 K GW−1 (hydrophilic). Two-dimensional finite element simulations for an equivalent MOSFET showed the significant thermal benefit of using Si-on-SiC over SOI. In these simulations, a MOSFET with a 200 nm thick, 42 μm wide Si drift region was recreated on a SOI structure (2 μm buried oxide) and on the Si-on-SiC material characterized here. At 5 W mm−1 power dissipation, the Si-on-SiC was shown to result in a &gt;60% decrease in temperature rise compared to the SOI structure

Influence of Guideline Operationalization on Youth Activity Prevalence in the International Children's Accelerometry Database

Introduction The United Kingdom and World Health Organization recently changed their youth physical activity (PA) guidelines from 60 min of moderate- to vigorous-intensity PA (MVPA) every day, to an average of 60 min of MVPA per day, over a week. The changes are based on expert opinion due to insufficient evidence comparing health outcomes associated with different guideline definitions. This study used the International Children’s Accelerometry Database to compare approaches to calculating youth PA compliance and associations with health indicators. Methods Cross-sectional accelerometer data (n = 21,612, 5–18 yr) were used to examine compliance with four guideline definitions: daily method (DM; ≥60 min MVPA every day), average method (AM; average of ≥60 min MVPA per day), AM5 (AM compliance and ≥5 min of vigorous PA [VPA] on ≥3 d), and AM15 (AM compliance and ≥15 min VPA on ≥3 d). Associations between compliance and health indicators were examined for all definitions. Results Compliance varied from 5.3% (DM) to 29.9% (AM). Associations between compliance and health indicators were similar for AM, AM5, and AM15. For example, compliance with AM, AM5, and AM15 was associated with a lower BMI z-score (statistics are coefficient [95% CI]): AM (−0.28 [−0.33 to −0.23]), AM5 (−0.28 [−0.33 to −0.23], and AM15 (−0.30 [−0.35 to −0.25]). Associations between compliance and health indicators for DM were similar/weaker, possibly reflecting fewer DM-compliant participants with health data and lower variability in exposure/outcome data. Conclusions Youth completing 60 min of MVPA every day do not experience superior health benefits to youth completing an average of 60 min of MVPA per day. Guidelines should encourage youth to achieve an average of 60 min of MVPA per day. Different guideline definitions affect inactivity prevalence estimates; this must be considered when analyzing data and comparing studies.publishedVersionPaid open acces

The optimization of 3.3 kV 4H-SiC JBS diodes

The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the optimized termination region are used to form the P-regions in the JBS active area. The width and spacing of the P-regions are varied to optimize both the ON- and OFF-state of the device. All the diodes tested displayed high blocking voltages and ideal turn-on characteristics up to the rated current of 2 A. However, the leakage current and the Schottky barrier height (SBH) were found to scale with the ratio of Schottky to p + regions. Full Schottkys, without p + regions, and those with very wide Schottky regions had the lowest SBH (1.61 eV for Ni, 1.11 eV for Mo, and 0.87 eV for Ti) and the highest leakage. Those diodes with the lowest Schottky openings of 2 μm had the lowest OFF-state leakage, but they suffered severe pinching from the surrounding p + regions, increasing their SBH. The best performing JBS diodes were Ni and Mo devices with the narrowest pitch, with the p + implants/Schottky regions both 2 μm wide. These offered the best balanced device design, with excellent OFF-state performance, while the Schottky ratio guaranteed a relatively low forward voltage drop

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design

The commercial success of silicon carbide (SiC) diodes and MOSFETs for the automotive industry has led many in the field to begin developing ultra-high voltage (UHV) SiC insulated gate bipolar transistors (IGBTs), rated from 6 kV to 30 kV, for future grid conversion applications. Despite this early interest, there has been little work conducted on the optimal layout for the SiC IGBT, most early work seeking to overcome difficulties in fabricating the devices without a P+ substrate. In this paper, numerical TCAD simulations are used to examine the link between the carrier lifetime of SiC IGBTs and their short circuit capability. For the planar devices, simulations show that increasing carrier lifetime from 1 to 10 μs, has not only a profound effect reducing on-state losses, but also increases short circuit withstand time (SCWT) by 39%. Two retrograde p-well designs are also investigated, the optimal device for SCWT having a 100 nm channel region of 5×1016 cm-3, with this increasing to a peak value of 2×1018 cm-3, in a 700 nm region beneath the channel

3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics

3.3 kV Schottky barrier diodes and Junction Barrier Schottky diodes have been fabricated, employing a phosphorous pentoxide (P2O5) surface treatment prior to metal deposition in an attempt to further condition the power device’s interface. For SBD structures, the treatment consistently reduces the leakage current in molybdenum, tungsten and niobium SBDs, for the tungsten treatment by more than four orders of magnitude. X-ray photoelectron spectroscopy (XPS) analysis on the treated SBD interface revealed formation of a metal phosphate between P2O5 and the metal. When compared to an untreated sample, the P2O5 treatment has increased the valence band to fermi level offset by 0.2 eV to 3.25 eV, indicating that the treatment results in a degenerately n-doped SiC surface. When applied to fully optimised 3.3 kV JBS power structures utilizing a hybrid JTE design, P2O5 treatments improved blocking capabilities across the entire dataset by as much as 1,000

Ventilation of the Arctic Ocean: Mean ages and inventories of anthropogenic CO2 and CFC-11

The Arctic Ocean constitutes a large body of water that is still relatively poorly surveyed because of logistical difficulties, although the importance of the Arctic Ocean for global circulation and climate is widely recognized. For instance, the concentration and inventory of anthropogenic CO2 (C ant) in the Arctic Ocean are not properly known despite its relatively large volume of well-ventilated waters. In this work, we have synthesized available transient tracer measurements (e.g., CFCs and SF6) made during more than two decades by the authors. The tracer data are used to estimate the ventilation of the Arctic Ocean, to infer deep-water pathways, and to estimate the Arctic Ocean inventory of C ant. For these calculations, we used the transit time distribution (TTD) concept that makes tracer measurements collected over several decades comparable with each other. The bottom water in the Arctic Ocean has CFC values close to the detection limit, with somewhat higher values in the Eurasian Basin. The ventilation time for the intermediate water column is shorter in the Eurasian Basin (∼200 years) than in the Canadian Basin (∼300 years). We calculate the Arctic Ocean C ant inventory range to be 2.5 to 3.3 Pg-C, normalized to 2005, i.e., ∼2% of the global ocean C ant inventory despite being composed of only ∼1% of the global ocean volume. In a similar fashion, we use the TTD field to calculate the Arctic Ocean inventory of CFC-11 to be 26.2 ± 2.6 × 106 moles for year 1994, which is ∼5% of the global ocean CFC-11 inventor