Electrostatic charging artefacts in Lorentz electron tomography of MFM tip stray fields

Using the technique of differential phase contrast (DPC) Lorentz electron microscopy, the magnetic stray field distribution from magnetic force microscopy (MFM) tips can be calculated in a plane in front of the tip using tomographic reconstruction techniques. Electrostatic charging of the tip during DPC imaging can significantly distort these field reconstructions. Using a simple point charge model, this paper illustrates the effect of electrostatic charging of the sample on the accuracy of tomographic field reconstructions. A procedure for separating electrostatic and magnetic effects is described, and is demonstrated using experimental tomographic data obtained from a modified MFM tip

Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19

We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropy to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials

High quality GaMnAs films grown with As dimers

We demonstrate that GaMnAs films grown with As2 have excellent structural, electrical and magnetic properties, comparable or better than similar films grown with As4. Using As2, a Curie temperature of 112K has been achieved, which is slightly higher than the best reported to date. More significantly, films showing metallic conduction have been obtained over a much wider range of Mn concentrations (from 1.5% to 8%) than has been reported for films grown with As4. The improved properties of the films grown with As2 are related to the lower concentration of antisite defects at the low growth temperatures employed.Comment: 8 pages, accepted for publication in J. Crystal Growt

Optical spin-transfer-torque-driven domain-wall motion in a ferromagnetic semiconductor

We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor,GaMnAsP. Two main contributions are identified. First, photocarrier spin exerts a spin-transfer torque on the magnetization via the exchange interaction. The direction of the domain-wall motion can be controlled using the helicity of the laser. Second, the domain wall is attracted to the hot spot generated by the focused laser. Unlike magnetic-field-driven domain-wall depinning, these mechanisms directly drive domain-wall motion, providing an optical tweezerlike ability to position and locally probe domain walls

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.Comment: 9 pages, 3 figure

Solar-Cycle Characteristics Examined in Separate Hemispheres: Phase, Gnevyshev Gap, and Length of Minimum

Research results from solar-dynamo models show the northern and southern hemispheres may evolve separately throughout the solar cycle. The observed phase lag between the hemispheres provides information regarding the strength of hemispheric coupling. Using hemispheric sunspot-area and sunspot-number data from Cycles 12 - 23, we determine how out of phase the separate hemispheres are during the rising, maximum, and declining period of each solar cycle. Hemispheric phase differences range from 0 - 11, 0 - 14, and 2 - 19 months for the rising, maximum, and declining periods, respectively. The phases appear randomly distributed between zero months (in phase) and half of the rise (or decline) time of the solar cycle. An analysis of the Gnevyshev gap is conducted to determine if the double-peak is caused by the averaging of two hemispheres that are out of phase. We confirm previous findings that the Gnevyshev gap is a phenomenon that occurs in the separate hemispheres and is not due to a superposition of sunspot indices from hemispheres slightly out of phase. Cross hemispheric coupling could be strongest at solar minimum, when there are large quantities of magnetic flux at the Equator. We search for a correlation between the hemispheric phase difference near the end of the solar cycle and the length of solar-cycle minimum, but found none. Because magnetic flux diffusion across the Equator is a mechanism by which the hemispheres couple, we measured the magnetic flux crossing the Equator by examining magnetograms for Solar Cycles 21 - 23. We find, on average, a surplus of northern hemisphere magnetic flux crossing during the mid-declining phase of each solar cycle. However, we find no correlation between magnitude of magnetic flux crossing the Equator, length of solar minima, and phase lag between the hemispheres.Comment: 15 pages, 7 figure

Imaging current-induced switching of antiferromagnetic domains in CuMnAs

The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using X-ray Magnetic Linear Dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated, with both showing reproducible switching in response to orthogonally applied current pulses. However, the behavior is inhomogeneous at the submicron level, highlighting the complex nature of the switching process in multi-domain antiferromagnetic films

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an optical analog of ferromagnetic resonancewhere the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data, we determined the magnetic anisotropy fields, the spin stiffness, and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular-to-plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material.We also show that the apparent magnetization precession damping is stronger for the n=1 spinwave resonance mode than for the n=0 uniform magnetization precession mode