Signatures of a magnetic-field-induced Lifshitz transition in the ultra-quantum limit of the topological semimetal ZrTe5

The quantum limit (QL) of an electron liquid, realised at strong magnetic fields, has long been proposed to host a wealth of strongly correlated states of matter. Electronic states in the QL are, for example, quasi-one dimensional (1D), which implies perfectly nested Fermi surfaces prone to instabilities. Whereas the QL typically requires unreachably strong magnetic fields, the topological semimetal ZrTe5 has been shown to reach the QL at fields of only a few Tesla. Here, we characterize the QL of ZrTe5 at fields up to 64 T by a combination of electrical-transport and ultrasound measurements. We find that the Zeeman effect in ZrTe5 enables an efficient tuning of the 1D Landau band structure with magnetic field. This results in a Lifshitz transition to a 1D Weyl regime in which perfect charge neutrality can be achieved. Since no instability-driven phase transitions destabilise the 1D electron liquid for the investigated field strengths and temperatures, our analysis establishes ZrTe5 as a thoroughly understood platform for potentially inducing more exotic interaction-driven phases at lower temperatures

Unconventional Hall response in the quantum limit of HfTe5

Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit

Observation of a three-dimensional fractional Hall response in HfTe5

Interacting electrons in two dimensions can bind magnetic flux lines to form composite quasiparticles with fractional electric charge, manifesting themselves in the fractional quantum Hall effect (FQHE). Although the FQHE has also been predicted to occur in three dimensions, it has not yet been experimentally observed. Here, we report the observation of fractional plateaus in the Hall conductivity of the bulk semimetal HfTe5 at magnetic fields beyond the quantum limit. The plateaus are accompanied by Shubnikov-de Haas minima of the longitudinal electrical resistivity. The height of the Hall plateaus is given by twice the Fermi wave vector in the direction of the applied magnetic field and scales with integer and particular fractional multiples of the conductance quantum. Our findings are consistent with strong electron-electron interactions, stabilizing a fractionalized variant of the Hall effect in three dimensions.Comment: 35 pages with 17 figure

Giant quantum oscillations in thermal transport in low-density metals via electron absorption of phonons

Oscillations of conductance observed in strong magnetic fields are a striking manifestation of the quantum dynamics of charge carriers in solids. The large charge carrier density in typical metals sets the scale of oscillations in both electrical and thermal conductivity, which characterize the Fermi surface. In semimetals, thermal transport at low-charge carrier density is expected to be phonon dominated, yet several experiments observe giant quantum oscillations in thermal transport. This raises the question of whether there is an overarching mechanism leading to sizable oscillations that survives in phonon-dominated semimetals. In this work, we show that such a mechanism exists. It relies on the peculiar phase-space allowed for phonon scattering by electrons when only a few Landau levels are filled. Our measurements on the Dirac semimetal ZrTe5 support this counter-intuitive mechanism through observation of pronounced thermal quantum oscillations, since they occur in similar magnitude and phase in directions parallel and transverse to the magnetic field. Our phase-space argument applies to all low-density semimetals, topological or not, including graphene and bismuth. Our work illustrates that phonon absorption can be leveraged to reveal degrees of freedom through their imprint on longitudinal thermal transport

Anomalous Shubnikov-de Haas effect and observation of the Bloch-Gr\"uneisen temperature in the Dirac semimetal ZrTe5

Appearance of quantum oscillations (QO) in both thermodynamic and transport properties of metals at low temperatures is the most striking experimental consequence of the existence of a Fermi surface (FS). The frequency of these oscillations and the temperature dependence of their amplitude provides essential information about the FS topology and fermionic quasiparticle properties. Here, we report the observation of an anomalous suppression of the QO amplitude seen in resistivity (Shubnikov de-Haas effect) at sub-kelvin temperatures in ZrTe5 samples with a single small FS sheet comprising less than 5% of the first Brillouin zone. By comparing these results with measurements of the magneto-acoustic QO and the recovery of the usual Lifshitz-Kosevich behavior of the Shubnikov de-Haas (SdH) effect in ZrTe$_5$ samples with a multi-sheet FS, we show that the suppression of the SdH effect originates from a decoupling of the electron liquid from the lattice. On crossing the so-called Bloch-Gr\"uneisen temperature, T$_BG$, electron-phonon scattering becomes strongly suppressed and in the absence of Umklapp scattering the electronic liquid regains Galilean invariance. In addition, we show, using a combination of zero-field electrical conductivity and ultrasonic-absorption measurements, that entering this regime leads to an abrupt increase of electronic viscosity

Tensile Deformation of Oriented Poly(ε-caprolactone) and Its Miscible Blends with Poly(vinyl methyl ether)

The structural evolution of micromolded poly(ε-caprolactone) (PCL) and its miscible blends with noncrystallizable poly(vinyl methyl ether) (PVME) at the nanoscale was investigated as a function of deformation ratio and blend composition using in situ synchrotron smallangle X-ray scattering (SAXS) and scanning SAXS techniques. It was found that the deformation mechanism of the oriented samples shows a general scheme for the process of tensile deformation: crystal block slips within the lamellae occur at small deformations followed by a stressinduced fragmentation and recrystallization process along the drawing direction at a critical strain where the average thickness of the crystalline lamellae remains essentially constant during stretching. The value of the critical strain depends on the amount of the amorphous component incorporated in the blends, which could be traced back to the lower modulus of the entangled amorphous phase and, therefore, the reduced network stress acting on the crystallites upon addition of PVME. When stretching beyond the critical strain the slippage of the fibrils (stacks of newly formed lamellae) past each other takes place resulting in a relaxation of stretched interlamellar amorphous chains. Because of deformation-induced introduction of the amorphous PVME into the interfibrillar regions in the highly oriented blends, the interactions between fibrils becomes stronger upon further deformation and thus impeding sliding of the fibrils to some extent leading finally to less contraction of the interlamellar amorphous layers compared to the pure PCLNational Natural Science Foundation of China (21204088 and 21134006). This work is within the framework of the RCUK/EPSRC Science Bridges China project of UK−China Advanced Materials Research Institute (AMRI)