Parallel single cell analysis on an integrated microfluidic platform for cell trapping, lysis and analysis

We report here a novel and easily scalable microfluidic platform for the parallel analysis of hundreds of individual cells, with controlled single cell trapping, followed by their lysis and subsequent retrieval of the cellular content for on-chip analysis. The device consists of a main channel and an array of shallow side channels connected to the main channel via trapping structures. Cells are individually captured in dam structures by application of a negative pressure from an outlet reservoir, lyzed on site and the cellular content controllably extracted and transported in the individual side channels for on-chip analysis.\u

The Level-0 Muon Trigger for the LHCb Experiment

A very compact architecture has been developed for the first level Muon Trigger of the LHCb experiment that processes 40 millions of proton-proton collisions per second. For each collision, it receives 3.2 kBytes of data and it finds straight tracks within a 1.2 microseconds latency. The trigger implementation is massively parallel, pipelined and fully synchronous with the LHC clock. It relies on 248 high density Field Programable Gate arrays and on the massive use of multigigabit serial link transceivers embedded inside FPGAs.Comment: 33 pages, 16 figures, submitted to NIM

Magnetic-field-induced charge redistribution in disordered graphene double quantum dots

We have studied the transport properties of a large graphene double quantum dot under the influence of a background disorder potential and a magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of the B field is investigated up to 10 T. Our results indicate that the charging energy of the quantum dot is reduced, and hence the effective size of the dot increases at a high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B fields, resulting in the charge delocalization and reduced charging energy observed experimentally.This work was financially supported by the European GRAND project (ICT/FET, Contract No. 215752) and EPSRC

InGaAs spin light emitting diodes measured in the Faraday and oblique Hanle geometries

InGaAs quantum well light emitting diodes (LED) with spin-injecting, epitaxial Fe contacts were fabricated using an in situ wafer transfer process where the semiconductor wafer was transferred under ultrahigh vacuum (UHV) conditions to a metals growth chamber to achieve a high quality interface between the two materials. The spin LED devices were measured optically with applied magnetic fields in either the Faraday or the oblique Hanle geometries in two experimental set-ups. Optical polarizations efficiencies of 4.5% in the Faraday geometry and 1.5% in the Hanle geometry are shown to be equivalent. The polarization efficiency of the electroluminescence is seen to decay as the temperature increases although the spin lifetime remains constant due to the influence of the D'yakonov–Perel' spin scattering mechanism in the quantum well.RM would like to acknowledge support from the EPSRC.This is the final version of the article. It first appeared from the Institute of Physics via https://doi.org/10.1088/0022-3727/49/16/16510