Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors

We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\rm th}$ = 10 mW ($\lambda_{\rm p}$ = 808 nm). The laser linewidth was found to be $\approx$3 GHz at $P_{\rm p}\approx$ 5 $P_{\rm th}$

Challenges in Open-air Microwave Quantum Communication and Sensing

Quantum communication is a holy grail to achieve secure communication among a set of partners, since it is provably unbreakable by physical laws. Quantum sensing employs quantum entanglement as an extra resource to determine parameters by either using less resources or attaining a precision unachievable in classical protocols. A paradigmatic example is the quantum radar, which allows one to detect an object without being detected oneself, by making use of the additional asset provided by quantum entanglement to reduce the intensity of the signal. In the optical regime, impressive technological advances have been reached in the last years, such as the first quantum communication between ground and satellites, as well as the first proof-of-principle experiments in quantum sensing. The development of microwave quantum technologies turned out, nonetheless, to be more challenging. Here, we will discuss the challenges regarding the use of microwaves for quantum communication and sensing. Based on this analysis, we propose a roadmap to achieve real-life applications in these fields.Comment: Long version of the article published in the Proceeding

Quantum dot photonic crystal lasers

Coupled cavity designs on two-dimensional square lattice photonic crystal slabs were used to demonstrate optically pumped indium arsenide quantum dot photonic crystal lasers at room temperature. Threshold pump powers of 120 and 370 μW were observed for coupled cavities including two and four defect cavities defined in optimised photonic crystals

Large size cryogenic turbine type flowmeter technology

Procurement, calibration, installation, and use of cryogenic turbine flowmeters for M-1 engin

Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor

Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.Board of Regents, University of Texas Syste

Critical Collapse in Einstein-Gauss-Bonnet Gravity in Five and Six Dimensions

Einstein-Gauss-Bonnet gravity (EGB) provides a natural higher dimensional and higher order curvature generalization of Einstein gravity. It contains a new, presumably microscopic, length scale that should affect short distance properties of the dynamics, such as Choptuik scaling. We present the results of a numerical analysis in generalized flat slice co-ordinates of self-gravitating massless scalar spherical collapse in five and six dimensional EGB gravity near the threshold of black hole formation. Remarkably, the behaviour is universal (i.e. independent of initial data) but qualitatively different in five and six dimensions. In five dimensions there is a minimum horizon radius, suggestive of a first order transition between black hole and dispersive initial data. In six dimensions no radius gap is evident. Instead, below the GB scale there is a change in the critical exponent and echoing period.Comment: 21 pages, 39 figures, a couple of references and two new figures adde

Development of an Economic Decision Support for the Application of Additive Manufacture in Aerospace

Additive Manufacturing offers a high potential in aerospace industry due to its freedom of design and the ability to manufacture complex and lightweight parts. The low number of units, high quality standards and fast response time are special challenges that have to be met especially in the Maintenance, Repair and Overhaul sector. Thus, companies have to decide at which point it is economic to apply Additive Manufacturing. However, companies lack experience on this new technology. This is why a tool is required that takes into account the above mentioned crucial points and supports the decision process. The paper analyzes aviation’s characteristics with regard to Additive Manufacturing. The structure of current MRO repair workflows is investigated to identify a feasible application for Additive Manufacturing. Additionally the supply chain will be examined to indicate the benefit which the technology can generate in this highly demanding field. The findings are integrated into a methodology that supports the decision whether to apply Additive Manufacturing on the basis of costs, time and quality.Mechanical Engineerin

Semiconductor laser monolithically pumped with a light emitting diode operating in the thermoelectrophotonic regime

Data are presented on a monolithic chip that integrates a quantum well semiconductor laser with a high efficiency light emitting diode (LED), with the LED used to optically pump the laser. The LED operates in the thermoelectrophotonic regime that can produce heat absorption, offering the possibility of heat pump action. The internal optical pumping also offers the possibility of very low internal loss in the laser and the prospect of reaching greater than unity power conversion efficiency in the laser chip. The integrated laser chip is operated and tested under continuous-wave room temperature operation

Non-Fermi liquid states in the pressurized CeCu2(Si1−xGex)2CeCu_2(Si_{1-x}Ge_x)_2 system: two critical points

In the archetypal strongly correlated electron superconductor CeCu$_2$Si$_2$ and its Ge-substituted alloys CeCu$_2$(Si$_{1-x}$Ge$_{x}$)$_2$ two quantum phase transitions -- one magnetic and one of so far unknown origin -- can be crossed as a function of pressure \cite{Yuan 2003a}. We examine the associated anomalous normal state by detailed measurements of the low temperature resistivity ($\rho$) power law exponent $\alpha$. At the lower critical point (at $p_{c1}$, $1\leq\alpha\leq 1.5$) $\alpha$ depends strongly on Ge concentration $x$ and thereby on disorder level, consistent with a Hlubina-Rice-Rosch scenario of critical scattering off antiferromagnetic fluctuations. By contrast, $\alpha$ is independent of $x$ at the upper quantum phase transition (at $p_{c2}$, $\alpha\simeq 1$), suggesting critical scattering from local or Q=0 modes, in agreement with a density/valence fluctuation approach.Comment: 4 pages, including 4 figures. New results added. Significant changes on the text and Fig.