Survival before annihilation in Psi-prime decays

We extend the simple scenario for $\Psi'$ decays suggested a few years ago. The $c\bar c$ pair in the $\Psi'$ does not annihilate directly into three gluons but rather survives before annihilating. An interesting prediction is that a large fraction of all $\Psi'$ decays could originate from the $\Psi' \to \eta_{c} (3\pi)$ channel which we urge experimentalists to identify. Our model solves the problem of the apparent hadronic excess in $\Psi'$ decays as well as the $\rho\pi$ puzzle since, in our view, the two-body decays of the $\Psi'$ are naturally of electromagnetic origin. Further tests of this picture are proposed, e.g. $J/\Psi \to b_{1}\eta$.Comment: 6 pages, no figur

Hadronic Phases and Isospin Amplitudes in D(B)→ππD(B) \to \pi \pi and D(B)→KKˉD(B) \to K \bar K Decays

Hadronic phase in $\pi \pi$ and $K \bar K$ channels are calculated a la Regge. At the D mass one finds $\delta_{\pi \pi} \approx \pi/3$ and $\delta_{K \bar K} \approx -\pi/6$ in good agreement with the CLEO data while at the B mass these angles are predicted to be, respectively, $11^\circ$ and $-7^\circ$. With the hadronic phase $e^{i \delta_{K \bar K}}$ taken into account, a quark diagram decomposition of the isospin invariant amplitudes in $D \to K \bar K$ decays fits the data provided the exchange diagram contribution is about 1/3 of the tree level one.Comment: 10pages,late

Characters of the W3 algebra

Traces of powers of the zero mode in the W3 Algebra have recently been found to be of interest, for example in relation to Black Hole thermodynamics, and arise as the terms in an expansion of the full characters of the algebra. We calculate the first few such powers in two cases. Firstly, we find the traces in the 3-state Potts model by using null vectors to derive modular differential equations for the traces. Secondly, we calculate the exact results for Verma module representations. We compare our two methods with each other and the result of brute-force diagonalisation for low levels and find complete agreement.Comment: v2: Numerous small changes, version to appear in JHEP, 22 pages. v3: Typos corrected, matches published version, 22 page

Controlling the dynamics of a coupled atom-cavity system by pure dephasing : basics and potential applications in nanophotonics

The influence of pure dephasing on the dynamics of the coupling between a two-level atom and a cavity mode is systematically addressed. We have derived an effective atom-cavity coupling rate that is shown to be a key parameter in the physics of the problem, allowing to generalize the known expression for the Purcell factor to the case of broad emitters, and to define strategies to optimize the performances of broad emitters-based single photon sources. Moreover, pure dephasing is shown to be able to restore lasing in presence of detuning, a further demonstration that decoherence can be seen as a fundamental resource in solid-state cavity quantum electrodynamics, offering appealing perspectives in the context of advanced nano-photonic devices.Comment: 10 pages, 7 figure

Final State Interaction Phases in B→Kπ B \to K \pi Decay Amplitudes

A simple Regge pole model for $K\pi$ scattering explains the large $e^{i \delta}$ between isospin amplitudes which is observed at the D meson mass ($\delta \approx \pi/2$). It predicts $\delta \approx 14^{\circ}- 20^{\circ}$ at the B mass. Implications for ($B \to K \pi$) decays and extensions of the model to other two-body decay channels are briefly discussed.Comment: 8pages,late

Trace anomalies and the ΔI=1/2\Delta I = 1/2 rule

Trace Anomaly Dominance in weak $K$-decays successfully reproduces the $\Delta I = {1\over 2}$ selection rule results, as observed in $K_S \to \pi\pi, K_L \to \pi\pi\pi, K_S \to \gamma\gamma$ and $K_L \to \pi^0 \gamma\gamma$.Comment: 10 pages, no figur

Pure emitter dephasing : a resource for advanced solid-state single photon sources

We have computed the spectrum emitted spontaneously by a quantum dot coupled to an arbitrarily detuned single mode cavity, taking into account pure dephasing processes. We show that if the emitter is incoherent, the cavity can efficiently emit photons with its own spectral characteristics. This effect opens unique opportunities for the development of devices exploiting both cavity quantum electrodynamics effects and pure dephasing, such as wavelength stabilized single photon sources robust against spectral diffusion.Comment: 5 pages, 3 figure

Electric field sensing with a scanning fiber-coupled quantum dot

We demonstrate the application of a fiber-coupled quantum-dot-in-a-tip as a probe for scanning electric field microscopy. We map the out-of-plane component of the electric field induced by a pair of electrodes by measurement of the quantum-confined Stark effect induced on a quantum dot spectral line. Our results are in agreement with finite element simulations of the experiment. Furthermore, we present results from analytic calculations and simulations which are relevant to any electric field sensor embedded in a dielectric tip. In particular, we highlight the impact of the tip geometry on both the resolution and sensitivity.Comment: 10 pages, 4 figure

Phases and Amplitudes in Inclusive Ψ\Psi and Ψ′\Psi' Decays

In inclusive decays of the $\Psi$ (3097), electromagnetic and gluonic annihilation amplitudes add incoherently, namely they are 90$^\circ$ out of phase. We argue that this incoherence must persist in each exclusive decay channel. For inclusive $\Psi'$ (3686) decays, we suggest the absence of a significant direct annihilation amplitude into three gluons and propose a new amplitude via QCD anomalies and the $h_c$ (3526) off shell. Phenomenological implications for exclusive decay channels are pointed out.Comment: 10 page

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors

Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were taken at selected temperatures in the 77K<T<300K range. The low field mobility, mu, and the interface defect density, Nst were extracted from the characteristics for each of the studied IXZOs. At higher T the mobility follows the Arrhenius law with an upward distortion, increasing as T was lowered, gradually transforming into the exp [-(T0/T)1/4] variation. We showed that mu(T, Nst) follows mu0exp[-Eaeff(T,Nst)/kT], with T-dependent effective activation energy Eaeff(T, Nst) accounts for the data, revealing a linear correlation between Eaeff and Nst at higher T. Temperature variation of Eaeff(T, Nst) was evaluated using a model assuming a random distribution of conduction mobility edge Ec values in the oxides, stemming from spatial fluctuations induced by disorder in the interface traps distribution. For a Gaussian distribution of Ec, the activation energy Eaeff(T, Nst) varies linearly with 1/T, which accounts satisfactorily for the data obtained on all the studied IXZOs. The model also shows that Eaeff(T, Nst) is a linear function of Nst at a fixed T, which explains the exponential decrease of mu with NST