Wave computing with passive memristive networks

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Since CMOS technology approaches its physical limits, the spotlight of computing technologies and architectures shifts to unconventional computing approaches. In this area, novel computing systems, inspired by natural and mostly nonelectronic approaches, provide also new ways of performing a wide range of computations, from simple logic gates to solving computationally hard problems. Reaction-diffusion processes constitute an information processing method, occurs in nature and are capable of massive parallel and low-power computing, such as chemical computing through Belousov-Zhabotinsky reaction. In this paper, inspired by these chemical processes and based on the wave-propagation information processing taking place in the reaction-diffusion media, the novel characteristics of the nanoelectronic element memristor are utilized to design innovative circuits of electronic excitable medium to perform both classical (Boolean) calculations and to model neuromorphic computations in the same Memristor-RLC (M-RLC) reconfigurable network.Peer ReviewedPostprint (author's final draft

Memristive cellular automata for modeling of epileptic brain activity

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like structure. Each such unit, referred as CA cell, performs simplistic computations/processes. However, a network of such identical cells can exhibit nonlinear behavior and be used to model highly complex physical phenomena and processes and to solve problems that are highly complicated for conventional computers. Brain activity has always been considered one of the most complex physical processes and its modeling is of utter importance. This work combines the CA parallel computing capability with the nonlinear dynamics of the memristor, aiming to model brain activity during the epileptic seizures caused by the spreading of pathological dynamics from focal to healthy brain regions. A CA-based confrontation extended to include long-range interactions, combined with the recent notion of memristive electronics, is thus proposed as a modern and promising parallel approach to modeling of such complex physical phenomena. Simulation results show the efficiency of the proposed design and the appropriate reproduction of the spreading of an epileptic seizure.Peer ReviewedPostprint (author's final draft

MemCA: all-memristor design for deterministic and probabilistic cellular automata hardware realization

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksInspired by the behavior of natural systems, Cellular Automata (CA) tackle the demanding long-distance information transfer of conventional computers by the massive parallel computation performed by a set of locally-coupled dynamical nodes. Although CA are envisioned as powerful deterministic computers, their intrinsic capabilities are expanded after the memristor’s probabilistic switching is introduced into CA cells, resulting in new hybrid deterministic and probabilistic memristor-based CA (MemCA). In the proposed MemCA hardware realization, memristor devices are incorporated in both the cell and rule modules, composing the very first all-memristor CA hardware, designed with mixed CMOS/Memristor circuits. The proposed implementation accomplishes high operating speed and reduced area requirements, exploiting also memristor as an entropy source in every CA cell. MemCA’s functioning is showcased in deterministic and probabilistic operation, which can be externally modified by the selection of programming voltage amplitude, without changing the design. Also, the proposed MemCA system includes a reconfigurable rule module implementation that allows for spatial and temporal rule inhomogeneity.Peer ReviewedPostprint (published version

Memristive Learning Cellular Automata: Theory and Applications

Memristors are novel non volatile devices that manage to combine storing and processing capabilities in the same physical place.Their nanoscale dimensions and low power consumption enable the further design of various nanoelectronic processing circuits and corresponding computing architectures, like neuromorhpic, in memory, unconventional, etc.One of the possible ways to exploit the memristor's advantages is by combining them with Cellular Automata (CA).CA constitute a well known non von Neumann computing architecture that is based on the local interconnection of simple identical cells forming N-dimensional grids.These local interconnections allow the emergence of global and complex phenomena.In this paper, we propose a hybridization of the CA original definition coupled with memristor based implementation, and, more specifically, we focus on Memristive Learning Cellular Automata (MLCA), which have the ability of learning using also simple identical interconnected cells and taking advantage of the memristor devices inherent variability.The proposed MLCA circuit level implementation is applied on optimal detection of edges in image processing through a series of SPICE simulations, proving its robustness and efficacy

Chemical Wave Computing from Labware to Electrical Systems

Unconventional and, specifically, wave computing has been repeatedly studied in laboratory based experiments by utilizing chemical systems like a thin film of Belousov–Zhabotinsky (BZ) reactions. Nonetheless, the principles demonstrated by this chemical computer were mimicked by mathematical models to enhance the understanding of these systems and enable a more detailedinvestigation of their capacity. As expected, the computerized counterparts of the laboratory based experiments are faster and less expensive. A further step of acceleration in wave-based computingis the development of electrical circuits that imitate the dynamics of chemical computers. A key component of the electrical circuits is the memristor which facilitates the non-linear behavior of the chemical systems. As part of this concept, the road-map of the inspiration from wave-based computing on chemical media towards the implementation of equivalent systems on oscillating memristive circuits was studied here. For illustration reasons, the most straightforward example was demonstrated, namely the approximation of Boolean gates

Future and emergent materials and devices for resistive switching

During the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent performance, reliability and low-energy operation and in the same time be utilized for unconventional computing paradigms such as neuromorphic and in-memory computation. In this paper, a brief review on the current state of the art for RRAMs is provided mainly focusing on the resistance switching mechanisms for various materials and corresponding devices. More specifically, we report on the switching mechanisms of RRAMs considering resistance bi-stability due to phase transformation, interfacial resistive switching, conductive filaments and thermochemical effects while the effect of environmental conditions like moisture and temperature is also analyzed. Finally, preliminary results related to our on-going investigations on such a type of Metal-Insulator-Metal (MIM) RRAMs devices derived from Silicon Nitride and compatible with existing CMOS technology are presented and further discussed.Postprint (published version

Wave computing with passive memristive networks

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Since CMOS technology approaches its physical limits, the spotlight of computing technologies and architectures shifts to unconventional computing approaches. In this area, novel computing systems, inspired by natural and mostly nonelectronic approaches, provide also new ways of performing a wide range of computations, from simple logic gates to solving computationally hard problems. Reaction-diffusion processes constitute an information processing method, occurs in nature and are capable of massive parallel and low-power computing, such as chemical computing through Belousov-Zhabotinsky reaction. In this paper, inspired by these chemical processes and based on the wave-propagation information processing taking place in the reaction-diffusion media, the novel characteristics of the nanoelectronic element memristor are utilized to design innovative circuits of electronic excitable medium to perform both classical (Boolean) calculations and to model neuromorphic computations in the same Memristor-RLC (M-RLC) reconfigurable network.Peer Reviewe

Plasma modified silicon nitride resistive switching memories

In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented.Postprint (published version