490 research outputs found
Numerical simulation of InGaN Schottky solar cell
The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the
potentiality to allow achieving high efficiency solar cells through the tuning
of its band gap by changing the Indium composition. It also counts among its
advantages a relatively low effective mass, high carriers\^a mobility, a high
absorption coefficient along with good radiation tolerance.However, the main
drawback of InGaN is linked to its p-type doping, which is difficult to grow in
good quality and on which ohmic contacts are difficult to realize. The Schottky
solar cell is a good alternative to avoid the p-type doping of InGaN. In this
report, a comprehensive numerical simulation, using mathematically rigorous
optimization approach based on state-of-the-art optimization algorithms, is
used to find the optimum geometrical and physical parameters that yield the
best efficiency of a Schottky solar cell within the achievable device
fabrication range. A 18.2% efficiency is predicted for this new InGaN solar
cell design
Robust Design by Antioptimization for Parameter Tolerant GaAs/AlOx High Contrast Grating Mirror for VCSEL Application
A GaAs/AlOx high contrast grating structure design which exhibits a 99.5%
high reflectivity for a 425nm large bandwidth is reported. The high contrast
grating (HCG) structure has been designed in order to enhance the properties of
mid-infrared VCSEL devices by replacing the top Bragg mirror of the cavity. A
robust optimization algorithm has been implemented to design the HCG structure
not only as an efficient mirror but also as a robust structure against the
imperfections of fabrication. The design method presented here can be easily
adapted for other HCG applications at different wavelengths.Comment: (c) 2013 IEEE. Personal use of this material is permitted. Permission
from IEEE must be obtained for all other users, including
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Simulation study of a new InGaN p-layer free Schottky based solar cell
On the road towards next generation high efficiency solar cells, the ternary
Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to
cover the whole solar spectrum through the change in its Indium composition.
The choice of the main structure of the InGaN solar cell is however crucial.
Obtaining a high efficiency requires to improve the light absorption and the
photogenerated carriers collection that depend on the layers parameters,
including the Indium composition, p-and n-doping, device geometry.. .
Unfortunately, one of the main drawbacks of InGaN is linked to its p-type
doping, which is very difficult to realize since it involves complex
technological processes that are difficult to master and that highly impact the
layer quality. In this paper, the InGaN p-n junction (PN) and p-in junction
(PIN) based solar cells are numerically studied using the most realistic
models, and optimized through mathematically rigorous multivariate optimization
approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for
the PN and PIN structures. It also leads to propose, analyze and optimize
player free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and
a new MIN structure for which the optimal efficiencies are shown to be a little
higher than for the conventional structures: respectively 18.2% and 19.8%. The
tolerance that is allowed on each parameter for each of the proposed cells has
been studied. The new MIN structure is shown to exhibit the widest tolerances
on the layers thicknesses and dopings. In addition to its being player free,
this is another advantage of the MIN structure since it implies its better
reliability. Therefore, these new InGaN SBSC are shown to be alternatives to
the conventional structures that allow removing the p-type doping of InGaN
while giving photovoltaic (PV) performances at least comparable to the standard
multilayers PN or PIN structures.Comment: Superlattices and Microstructures, Elsevier, 201
Cellular Computing and Least Squares for partial differential problems parallel solving
The pre-print archived version is not the one that is published, as the editor does not formally allow it.International audienceThis paper shows how partial differential problems can be solved thanks to cellular computing and an adaptation of the Least Squares Finite Elements Method. As cellular computing can be implemented on distributed parallel architectures, this method allows the distribution of a resource demanding differential problem over a computer network
Un modèle continue pour le transfert de glissement aux joints de grains
International audienceUsing a continuous representation of dislocations in elastoplastic polycrystals, we investigate slip transfer at grain boundaries by assessing the compatibility of the slip system shear rates with tangential continuity of the plastic distortion rate tensor at these interfaces. Fulfillment of this tangential continuity condition is needed for consistency of the continuous description of dislocations in polycrystals. We show that, in f.c.c. materials at moderate temperatures, this condition unequivocally translates into constraints on the slip rates on both sides of grain boundaries. Appended to the elastoplastic boundary value problem, it allows a complete determination of the slip system shear rates. An algorithm enabling the implementation of compatible slip transfer in both the finite element methods and the spectral methods based on Fast Fourier Transforms is provided in both standard crystal plasticity and the mechanics of dislocations fields.En utilisant une représentation continue des dislocations dans les polycristaux élastoplastiques, nous étudions le transfert de glissement aux joints de grains en évaluant la compatibilité des taux de cisaillement du système de glissement avec la continuité tangentielle du tenseur de taux de distorsion plastique à ces interfaces. La réalisation de cette condition de continuité tangentielle est nécessaire pour la cohérence de la description continue des dislocations dans les polycristaux. Nous montrons que, dans des matériaux c.f.c. à des températures modérées, cette condition se traduit sans équivoque par des contraintes sur les taux de glissement des deux côtés des joints de grains. Associé au problème de la valeur limite élastoplastique, il permet une détermination complète des taux de cisaillement du système de glissement. Un algorithme permettant la mise en œuvre d'un transfert de glissement compatible dans les méthodes par éléments finis et les méthodes spectrales basées sur la transformation de Fourier rapide est fourni à la fois dans la plasticité cristalline standard et dans la mécanique des champs de dislocations
The theory of photorefractive resonance for localized beams in two-carrier photorefractive systems
This paper extends the existing theory of two carrier photorefractivity
resonance, which is generally applied to Iron doped Indium Phosphide (InP:Fe),
to the case of low non-harmonic illumination. The space charge field profile is
computed, and the variations of its amplitude, width and position are
determined as functions of the background intensity. The effect of
photorefractive resonance on these quantities is evidenced, contributing to the
understanding of published experimental results in InP:Fe.Comment: Physical Review A: Atomic, Molecular and Optical Physics Accepted
(2009) To be publishe
Microsecond infrared beam bending in photorefractive iron doped indium phosphide
International audienceA time resolved study of the behavior of a single beam in photorefractive iron doped indium phosphide is provided down to the microsecond range, showing that infrared beam bending does occur on the microsecond time scale for moderate beam intensities. Two distinct time scales are evidenced, the behavior of which are the sign of two different photorefractive mechanisms
Mid-infrared sub-wavelength grating mirror design: tolerance and influence of technological constraints
High polarization selective Si/SiO2 mid-infrared sub-wavelength grating
mirrors with large bandwidth adapted to VCSEL integration are compared. These
mirrors have been automatically designed for operation at \lambda = 2.3 m
by an optimization algorithm which maximizes a specially defined quality
factor. Several technological constraints in relation with the grating
manufacturing process have been imposed within the optimization algorithm and
their impact on the optical properties of the mirror have been evaluated.
Furthermore, through the tolerance computation of the different dimensions of
the structure, the robustness with respect to fabrication errors has been
tested. Finally, it appears that the increase of the optical performances of
the mirror imposes a less tolerant design with severer technological
constraints resulting in a more stringent control of the manufacturing process.Comment: The final publication is available at
http://iopscience.iop.org/2040-8986/13/12/125502
Experimental control of steady state photorefractive self-focusing in InP:Fe at infrared wavelengths
International audienceThis paper reports an experimental study of the self-focusing process in iron doped indium phosphide at an 1.06 micron wavelength, identifying the influence of temperature, beam intensity and background illumination \RefereeOne{for two different iron dopings}. We point out that the iron ionization ratio is at the origin of different qualitative behavior previously reported and we show that it is possible to reproduce the said behaviors in the same crystal by applying a uniform illumination, allowing their eventual control for dynamic wave-guiding
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