4,105 research outputs found

    Stellar collisions in accreting protoclusters: a Monte Carlo dynamical study

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    We explore the behaviour of accreting protoclusters with a Monte Carlo dynamical code in order to evaluate the relative roles of accretion, two body relaxation and stellar collisions in the cluster evolution. We corroborate the suggestion of Clarke & Bonnell that the number of stellar collisions should scale as N5/3M˙2/3N^{5/3} \dot M^{2/3} (independent of other cluster parameters, where N is the number of stars in the cluster and M˙\dot M the rate of mass accretion) and thus strengthen the argument that stellar collisions are more likely in populous (large N) clusters. We however find that the estimates of Clarke & Bonnell were pessimistic in the sense that we find that more than 99 % of the stellar collisions occur within the post-adiabatic regime as the cluster evolves towards core collapse, driven by a combination of accretion and two-body relaxation. We discuss how the inclusion of binaries may reduce the number of collisions through the reversal of core collapse but also note that it opens up another collisional channel involving the merger of stars within hard binaries; future Nbody simulations are however required in order to explore this issue.Comment: 9 pages, 9 figures; accepted for publication in MNRAS. This version contains minor revisions after referee's comments

    Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

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    The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode.Comment: to appear in Physical Review Letter

    Device modeling of long-channel nanotube electro-optical emitter

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    We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides

    Performance evaluation of wheels for lunar vehicles

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    Performance evaluation of wheels for lunar vehicle

    Energy-efficient Internet of Things monitoring with low-capacity devices

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    The Internet of Things (IoT) allows users to gather data from the physical environment. While sensors in public spaces are already widely used, users are reluctant to deploy sensors for shared data at their homes. The deployment of IoT nodes at the users premises presents privacy issues regarding who can access to their data once it is sent to the Cloud which the users cannot control. In this paper we present an energy-efficient and low cost solution for environmental monitoring at the users home. Our system is built completely with open source components and is easy to reproduce. We leverage the infrastructure and trust of a community network to store and control the access to the monitored data. We tested our solution during several months on different low-capacity single board computers (SBC) and it showed to be stable. Our results suggest that this solution could become a permanently running service in SBCs at the users homes.Peer ReviewedPostprint (author's final draft

    Women and sport in Africa : An ethnographic study in Victoria Falls, Zimbabwe

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    Neural networks and differential equations

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    Numerical modelling of nonlinear electromechanical coupling of an atomic force microscope with finite element method

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    In this contribution, an atomic force microscope is modelled and in this context, a non-linear coupled 3-D-boundary value problem is solved numerically using the finite element method. The coupling of this system is done by using the Maxwell stress tensor. In general, an iterative weak coupling is used, where the two physical problems are solved separately. However, this method does not necessarily guarantee convergence of the nonlinear computation. Hence, this contribution shows the possibility of solving the multiphysical problem by a strong coupling, which is also referred to as monolithic approach. The electrostatic field and the mechanical displacements are calculated simultaneously by solving only one system of equation. Since the Maxwell stress tensor depends nonlinearly on the potential, the solution is solved iteratively by the Newton method. © 2010 Author(s).DF

    Permalloy-based carbon nanotube spin-valve

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    In this Letter we demonstrate that Permalloy (Py), a widely used Ni/Fe alloy, forms contacts to carbon nanotubes (CNTs) that meet the requirements for the injection and detection of spin-polarized currents in carbon-based spintronic devices. We establish the material quality and magnetization properties of Py strips in the shape of suitable electrical contacts and find a sharp magnetization switching tunable by geometry in the anisotropic magnetoresistance (AMR) of a single strip at cryogenic temperatures. In addition, we show that Py contacts couple strongly to CNTs, comparable to Pd contacts, thereby forming CNT quantum dots at low temperatures. These results form the basis for a Py-based CNT spin-valve exhibiting very sharp resistance switchings in the tunneling magnetoresistance, which directly correspond to the magnetization reversals in the individual contacts observed in AMR experiments.Comment: 3 page
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