Component integration strategies in metamorphic 4-junction III-V concentrator solar cells

Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers

Low State, Phase-Resolved IR Spectroscopy of VV Puppis

We present phase-resolved low resolution $JHK$ and higher resolution $K$-band spectroscopy of the polar VV Pup. All observations were obtained when VV Pup was in a low accretion state having a K magnitude near 15. The low resolution observations reveal cyclotron emission in the $J$ band during some phases, consistent with an origin near the active 30.5 MG pole on the white dwarf. The secondary in VV Pup appears to be a normal M7V star and we find that the $H$ and $K$ band fluxes are entirely due to this star at all orbital phases during the low accretion state. We use our higher resolution Keck spectroscopy to produce the first $K$-band radial velocity curve for VV Pup. Our orbital solution yields $K_2$=414$\pm27$ km sec$^{-1}$ and leads to mass estimates of M$_1$=0.73$\pm$0.05 M$_{\odot}$ and M$_2$=0.10$\pm$0.02 M$_{\odot}$. We find that the mass accretion rates during the normal low states of the polars VV Pup, EF Eri, and EQ Cet are near 10$^{-13}$ M$_{\odot}$ yr$^{-1}$. The fact that \.M is not zero in low state polars indicates active secondary stars in these binary systems, including the sub-stellar donor star present in EF Eri.Comment: Accepted in Astronomical Journal 5 figure

Metamorphic III-V solar cells: recent progress and potential

Metamorphic semiconductor devices are commonly considered to have inferior electronic quality. However, recent development of compositionally graded buffers and junction structures have led to the achievement of high quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. Optimizing the optical design of the solar cell becomes important in order to enhance photon recycling and open circuit voltage in these cells. In this paper we first present recent performance results for 1eV and 0.7eV GaInAs solar cells grown on GaAs substrates. Then an electro-optical model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that significant improvements can be achieved by improving both the electronic quality and optics of these cells

Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates

Lattice-matched and pseudomorphic tunnel junctions have been developed in the past for application in a variety of semiconductor devices, including heterojunction bipolar transistors, vertical cavity surface-emitting lasers, and multijunction solar cells. However, metamorphic tunnel junctions have received little attention. In 4-junction Ga0.51In0.49P/GaAs/Ga0.76In0.24As/Ga0.47In0.53As inverted-metamorphic solar cells (4J-IMM), a metamorphic tunnel junction is required to series connect the 3rd and 4th junctions. We present a tunnel junction based on a metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 structure for this purpose. This tunnel junction is grown on a metamorphic Ga0.76In0.24As template on a GaAs substrate. The band offsets in the resulting type-II heterojunction are calculated using the first-principles density functional method to estimate the tunneling barrier height and assess the performance of this tunnel junction against other material systems and compositions. The effect of the metamorphic growth on the performance of the tunnel junctions is analyzed using a set of metamorphic templates with varied surface roughness and threading dislocation density. Although the metamorphic template does influence the tunnel junction performance, all tunnel junctions measured have a peak current density over 200 A/cm2. The tunnel junction on the best template has a peak current density over 1500 A/cm2 and a voltage drop at 15 A/cm2 (corresponding to operation at 1000 suns) lower than 10 mV, which results in a nearly lossless series connection of the 4th junction in the 4J-IMM structure.The authors thankfully acknowledge the invaluable support by W. Olavarria and M. Young growing and processing the semiconductor devices. I. Garcıa holds an IOF grant from the People Programme (Marie Curie Actions) of the European Union’s Seventh Framework Programme (FP7/ 2007-2013) under REA grant agreement No. 299878. This work is supported by the U.S. Department of Energy under Contract No. DE-AC36-08-GO28308 with the National Renewable Energy Laboratory

Generalized optoelectronic model of series-connected multijunction solar cells

The emission of light from each junction in a series-connected multijunction solar cell both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs of the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements

Type IIb Supernova SN 2011dh: Spectra and Photometry from the Ultraviolet to the Near-Infrared

We report spectroscopic and photometric observations of the Type IIb SN 2011dh obtained between 4 and 34 days after the estimated date of explosion (May 31.5 UT). The data cover a wide wavelength range from 2,000 Angstroms in the UV to 2.4 microns in the NIR. Optical spectra provide line profiles and velocity measurements of HI, HeI, CaII and FeII that trace the composition and kinematics of the SN. NIR spectra show that helium is present in the atmosphere as early as 11 days after the explosion. A UV spectrum obtained with the STIS reveals that the UV flux for SN 2011dh is low compared to other SN IIb. The HI and HeI velocities in SN 2011dh are separated by about 4,000 km/s at all phases. We estimate that the H-shell of SN 2011dh is about 8 times less massive than the shell of SN 1993J and about 3 times more massive than the shell of SN 2008ax. Light curves (LC) for twelve passbands are presented. The maximum bolometric luminosity of $1.8 \pm 0.2 \times 10^{42}$ erg s$^{-1}$ occurred about 22 days after the explosion. NIR emission provides more than 30% of the total bolometric flux at the beginning of our observations and increases to nearly 50% of the total by day 34. The UV produces 16% of the total flux on day 4, 5% on day 9 and 1% on day 34. We compare the bolometric light curves of SN 2011dh, SN 2008ax and SN 1993J. The LC are very different for the first twelve days after the explosions but all three SN IIb display similar peak luminosities, times of peak, decline rates and colors after maximum. This suggests that the progenitors of these SN IIb may have had similar compositions and masses but they exploded inside hydrogen shells that that have a wide range of masses. The detailed observations presented here will help evaluate theoretical models for this supernova and lead to a better understanding of SN IIb.Comment: 23 pages, 14 figures, 9 tables, accepted by Ap

Spatially resolved mass flux measurements with dual comb spectroscopy

Providing an accurate, representative sample of mass flux across large open areas for atmospheric studies or the extreme conditions of a hypersonic engine is challenging for traditional intrusive or point-based sensors. Here, we demonstrate that laser absorption spectroscopy with frequency combs can simultaneously measure all of the components of mass flux (velocity, temperature, pressure, and species concentration) with low uncertainty, spatial resolution corresponding to the span of the laser line of sight, and no supplemental sensor readings. The low uncertainty is provided by the broad spectral bandwidth, high resolution, and extremely well-known and controlled frequency axis of stabilized, mode-locked frequency combs. We demonstrate these capabilities in the isolator of a ground-test supersonic propulsion engine at Wright-Patterson Air Force Base. The mass flux measurements are consistent within 3.6% of the facility-level engine air supply values. A vertical scan of the laser beams in the isolator measures the spatially resolved mass flux, which is compared with computational fluid dynamics simulations. A rigorous uncertainty analysis demonstrates a DCS instrument uncertainty of ~0.4%, and total uncertainty (including non-instrument sources) of ~7% for mass flux measurements. These measurements demonstrate DCS as a low-uncertainty mass flux sensor for a variety of applications.Comment: Main Text: 15 pages, 7 figure; Supplement: 6 pages, 4 figures; Submitted to Optic

Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and 8.9x10^6 cm^-2 on InP and GaAs, respectively. The devices generate open-circuit voltages of 0.386 V and 0.383 V, respectively, at a current density of ~10 A/cm^2, yielding bandgap-voltage offsets of 0.20 and 0.21 V. We measured their broadband reflectance and used it to estimate thermophotovoltaic efficiency. The InP-based cell is estimated to yield 1.09 W/cm^2 at 1100 degrees C vs. 0.92 W/cm^2 for the GaAs-based cell, with efficiencies of 16.8 vs. 9.2%. The efficiencies of both devices are limited by sub-bandgap absorption, with power weighted sub-bandgap reflectances of 81% and 58%, respectively, which we assess largely occurs in the graded buffers. We estimate that the thermophotovoltaic efficiencies would peak at ~1100 degrees C at 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0-2.3 micron atmospheric window. We estimate peak LPC efficiencies of 36.8% and 32.5% under 2.0 micron irradiances of 1.86 W/cm^2 and 2.81 W/cm^2, respectively.Comment: 14 pages, 6 figure

Mechanically stacked four-junction concentrator solar cells

Multijunction solar cells can be fabricated by bonding together component cells that are grown separately. Because the component cells are each grown lattice-matched to suitable substrates, this technique allows alloys of different lattice constants to be combined without the structural defects introduced when using metamorphic buffers. Here we present results on the fabrication and performance of four-junction mechanical stacks composed of GaInP/GaAs and GaInAsP/GaInAs tandems, grown on GaAs and InP substrates, respectively. The two tandems were bonded together with a lowindex, transparent epoxy that acts as an omni-directional reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the sub-bandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and thus higher subcell voltage, compared with GaAs subcells without enhanced internal optics; all four subcells exhibit excellent material quality. The device was fabricated with four contact terminals so that each tandem can be operated at its maximum power point, which raises the cumulative efficiency and decreases spectral sensitivity. Efficiencies exceeding 38% at one-sun have been demonstrated. Eliminating the series resistance is the key challenge for the concentrator cells. We will discuss the performance of one-sun and concentrator versions of the device, and compare the results to recently fabricated monolithic four-junction cells