Exploitative and Hierarchical Antagonism in a Cooperative Bacterium

Social organisms that cooperate with some members of their own species, such as close relatives, may fail to cooperate with other genotypes of the same species. Such noncooperation may take the form of outright antagonism or social exploitation. Myxococcus xanthus is a highly social prokaryote that cooperatively develops into spore-bearing, multicellular fruiting bodies in response to starvation. Here we have characterized the nature of social interactions among nine developmentally proficient strains of M. xanthus isolated from spatially distant locations. Strains were competed against one another in all possible pairwise combinations during starvation-induced development. In most pairings, at least one competitor exhibited strong antagonism toward its partner and a majority of mixes showed bidirectional antagonism that decreased total spore production, even to the point of driving whole populations to extinction. Differential response to mixing was the primary determinant of competitive superiority rather than the sporulation efficiencies of unmixed populations. In some competitive pairings, the dominant partner sporulated more efficiently in mixed populations than in clonal isolation. This finding represents a novel form of exploitation in bacteria carried out by socially competent genotypes and is the first documentation of social exploitation among natural bacterial isolates. Patterns of antagonistic superiority among these strains form a highly linear dominance hierarchy. At least some competition pairs construct chimeric, rather than segregated, fruiting bodies. The cooperative prokaryote M. xanthus has diverged into a large number of distinct social types that cooperate with clone-mates but exhibit intense antagonism toward distinct social types of the same species. Most lengthy migration events in nature may thus result in strong antagonism between migratory and resident populations, and this antagonism may have large effects on local population sizes and dynamics. Intense mutual antagonism appears to be more prevalent in this prokaryotic social species than has been observed in the eukaryotic social slime mold Dictyostelium discoideum, which also exhibits multicellular development. The finding of several cases of facultative social exploitation among these natural isolates suggests that such exploitation may occur frequently in nature in many prokaryotes with cooperative traits

Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

Peer Reviewe

A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells

AbstractIn this paper we introduce a quasi 3-D electrical model for a high efficiency interdigitated back contact (IBC) solar cell. This distributed electrical network is based on two-diodes circuit elementary units. It allows accounting for the resistive losses due to the transport through the emitter, the back surface field (BSF) and the fingers and busbars metallization. Moreover, it can model the electrical shading losses attributed to the BSF busbar. We calibrated the electrical components of the model according to experimental measurements on real devices. The validity of the model is demonstrated by the good agreement between simulation and experimental results for dark and illuminated IV measurements with and without masked busbars. The model can now easily be applied to simulate and optimize different metal grid layouts

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

Degradation induced by hot-carrier stress is a crucial issue for the reliability of power LDMOS transistors. This is even more true for the p-channel LDMOS in which, unlike the n-channel counterpart, both the majority and minority carriers play a fundamental role on the device reliability. An in-depth study of the microscopic mechanisms induced by hot-carrier stress in new generation BCD integrated p-channel LDMOS is presented in this paper. The effect of the competing electron and hole trapping mechanisms on the on-resistance drift has been thoroughly analyzed. To this purpose, TCAD simulations including the deterministic solution of Boltzmann transport equation and the microscopic degradation mechanisms have been used, to the best of our knowledge, for the first time. The insight gained into the degradation sources and dynamics will provide a relevant basis for future device optimization

Pathological and phylogenetic characterization of Amphibiothecum sp. infection in an isolated amphibian (Lissotriton helveticus) population on the island of Rum (Scotland)

Outbreaks of cutaneous infectious disease in amphibians are increasingly being attributed to an overlooked group of fungal-like pathogens, the Dermocystids. During the last 10 years on the Isle of Rum, Scotland, palmate newts (Lissotriton helveticus) have been reportedly afflicted by unusual skin lesions. Here we present pathological and molecular findings confirming that the pathogen associated with these lesions is a novel organism of the order Dermocystida, and represents the first formally reported, and potentially lethal, case of amphibian Dermocystid infection in the UK. Whilst the gross pathology and the parasite cyst morphology were synonymous to those described in a study from infected L. helveticus in France, we observed a more extreme clinical outcome on Rum involving severe subcutaneous oedema. Phylogenetic topologies supported synonymy between Dermocystid sequences from Rum and France and as well as their distinction from Amphibiocystidium spp. Phylogenetic analysis also suggested that the amphibian-infecting Dermocystids are not monophyletic. We conclude that the L. helveticusinfecting pathogen represents a single, novel species; Amphibiothecum meredithae

Numerical Simulation of Vertical Silicon Nanowires based Heterojunction Solar Cells

Abstract Nanowires (NWs) solar cells are expected to outperform the thin-film counterparts in terms of optical absorptance. In this theoretical study we optimize the geometry of vertical crystalline-amorphous silicon core-shell NW arrays on doped ZnO:Al (AZO)-Glass substrate by means of 3-D optical simulations in order to maximize the photon absorption. The optimized geometry is investigated by means of 3-D TCAD numerical simulation in order to calculate the ultimate efficiency and the main figures of merit by taking into account recombination losses. We show that optimized 10 μm-long crystalline – amorphous silicon core-shell (c-Si/a-Si/AZO/Glass) NWs can reach photo-generated current up to 22.94 mA/cm 2 (above 45% larger than that of the planar counterpart with the same amount of absorbing material) and conversion efficiency of 13.95%

Analysis of the impact of doping levels on performance of back contact - back junction solar cells

AbstractIn this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study of the impact of the doping levels on the main figures of merit in the different regions of a crystalline silicon Back-Contact Back-Junction (BC-BJ) solar cell: the emitter, the Back Surface Field (BSF) and the Front Surface Field (FSF). The study is supported by a dark loss analysis which can highlight the contribution of several recombination mechanisms to the total diode saturation current. The efficiency curve as a function of doping level exhibits a bell-shape with a clearly identifiable optimum value for the three regions. The decrease in efficiency observed at lower doping values is explained in terms of higher contact recombination for BSF and emitter, and in terms of higher surface recombination for FSF. The efficiency decrease observed at higher doping values is ascribed to the higher surface recombination for FSF and Auger recombination for all cases

Simulation Study of Multi-wire front Contact Grids for Silicon Solar Cells

Abstract Multi-wire (MW) front-contact schemes represent a promising alternative to standard H-pattern structure with ribbon busbar (BB) in silicon solar cells. In the case of MW schemes, busbar are replaced by copper wires. MW have been demonstrated to enhance the photo-generation with respect to a standard H-pattern structure with ribbon busbar when solar cells are encapsulated and assembled in modules. However, the influence of the geometrical and optical properties of the encapsulation layers as well as of wires on the optical effective shading is not exhaustively treated by the literature. In this work, we have performed electro-optical simulations of MW and BB based solar cells in order to calculate the effective optical shading factor, the enhancement of conversion efficiency and the saving of contact-paste, with respect to the BB design. Specifically, we have studied by means of a ray-tracing simulation tool the significant impact of the front contact grid geometry, of the encapsulation layer thickness and of the optical properties of the cell front interface on the effective optical shading. The calculated values of effective optical shading are used to determine the enhancement of the figures of merit and the paste saving with respect to the reference silver BB scheme. On the basis of our calculations the adoption of optimized MW designs may enhance the conversion efficiency up to 0.5% abs , allowing paste saving up to 50 mg per cell

Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture

In this paper, we present an analysis of the degradation induced by hot-carrier stress in new generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with the same nominal voltage and comparable performance featuring a selective LOCOS and a shallow-trench isolation are investigated by means of constant voltage stress measurements and TCAD simulations. In particular, the on-resistance degradation in linear regime is experimentally extracted and numerically reproduced under different stress conditions. A similar amount of degradation has been reached by the two architectures, although different physical mechanisms contribute to the creation of the interface states. By using a recently developed physics-based degradation model, it has been possible to distinguish the damage due to collisions of single high-energetic electrons (single-particle events) and the contribution of colder electrons impinging on the silicon/oxide interface (multiple-particle events). A clear dominance of the single-electron collisions has been found in the case of LOCOS structure, whereas the multiple-particle effect plays a clear role in STI-based device at larger gate-voltage stress