Laser-plasma-based space radiation reproduction in the laboratory

Space radiation is a great danger to electronics and astronauts onboard space vessels. The spectral flux of space electrons, protons and ions for example in the radiation belts is inherently broadband, but this is a feature hard to mimic with conventional radiation sources. Using laser-plasma-accelerators, we reproduced relativistic, broadband radiation belt flux in the laboratory, and used this man-made space radiation to test the radiation hardness of space electronics. Such close mimicking of space radiation in the lab builds on the inherent ability of laser-plasma-accelerators to directly produce broadband Maxwellian-type particle flux, akin to conditions in space. In combination with the established sources, utilisation of the growing number of ever more potent laser-plasma-accelerator facilities worldwide as complementary space radiation sources can help alleviate the shortage of available beamtime and may allow for development of advanced test procedures, paving the way towards higher reliability of space missions

High-Speed Single-Event Current Transient Measurements in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: 1) Position correlation. 2) Unique response for different bias schemes. 3) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: 1) Feedback using microbeam data 2) Overcome existing issues of LET and ion range with microbeam Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates

Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback

Analysis of SET propagation in Flash-based FPGAs by means of electrical pulse injection

Advanced digital circuits are increasingly sensitive to single event transients (SETs) phenomena. Technology scaling has resulted in a greater sensitivity to single event effects (SEEs) and more in particular to SET propagation, since transients may be generated and propagated through the circuit logic, leading to behavioral errors of the affected circuit. When circuits are implemented on Flash-based FPGAs, SETs generated in the combinational logic resources are the main source of critical behavior. In this paper, we developed a technique based on electrical pulse injection for the analysis of SETs propagation within logic resources of Flash-based FPGAs. We outline logic schematic that allows the injection of different SET pulses. We performed several experimental analyses. We characterized the basic logic gates used by circuits implemented on Flash-based FPGAs evaluating the effect on logic-chains of real lengths. Additionally, we performed an effective analysis evaluating the SET propagation through microprocessor logic paths. Results demonstrated the possibility of mitigating SET-broadening effects by acting on physical place and route constraint

New Techniques for SET Sensitivity and Propagation Measurement in Flash-Based FPGAs

International audienc

Alpha-induced soft errors in Floating Gate flash memories

We study the sensitivity to alpha particles of state-of-the-art Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND Floating Gate (FG) flash memories with NAND architecture. We show that starting from a feature size of 50 nm, MLC flash memories are sensitive to alpha particles, whereas SLC devices do not show any sensitivity down to a feature size of 34 nm. We calculate the alpha-induced soft error rates on the field, discuss technology trends in comparison to heavy-ions

Single and Multiple Cell Upsets in 25-nm NAND Flash Memories

We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ions, including alpha particles. Compared to multilevel cell memories of previous generations, these devices show no apparent error dependence on the program level, adherence to the cosine law, and a large number of multiple cell upsets (MCUs). Floating-gate errors were mapped to their physical location, and MCUs were studied as a function of their multiplicity, direction, particle linear energy transfer, irradiation angle, and program level

Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation

We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss retention and functional failures, analyzing the role of floating gate cells and peripheral circuitry, as compared to previous generations. We found that in these new devices, retention errors appear in all program levels. Guidelines on worst-case testing conditions are given

Accurate Mitigation of Single Event Effects on Flash-based FPGAs: A new Design Flow

We propose a new design flow for implementing circuits hardened against SET effects af- fecting Flash-based FPGAs. Experimental results on RISC microprocessors show an in- crease of robustenss of more than 70% wrt traditional mitigation approache