Frost Crack in Norway Maple, Acer platanoides

Frost cracks developed on from 0 - 29 per cent of the Norway maples in one nursery near St. Paul, Minnesota, in late November, 1970. The trees affected averaged 0 .9 - 1.3 inches in diameter and, of the eight varieties in the nursery, Jade Glen was the most susceptible and Emerald Queen the most resistant. More of the trees on a northeast facing slope were affected than those on a flat knoll. After 2 years the majority of the cracks were closed, except in the Crimson King variety, in which case 86 per cent were still open. Wood rotting fungi, especially Schizophyllum commune, were recovered from 100 per cent of the trees

Stable fourfold configurations for small vacancy clusters in silicon from ab initio calculations

Using density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and penta-vacancies in silicon. These new configurations consist of combinations of a ring-hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain fourfold. As a result, their formation energies are lower by 0.6, 1.0, and 0.6 eV, respectively, than the ``part of a hexagonal ring'' configurations, believed up to now to be the lowest-energy states

Line defects in epitaxial silicon films grown at 560 C

We present an investigation of line defects in epitaxially grown silicon layers using Secco defect etching and transmission electron microscopy TEM . 1 m thick layers were deposited onto Si 100 wafers at a substrate temperature of 560 C using electron cyclotron resonance chemical vapour deposition ECRCVD . Defect etching reveals a variety of etch pits related to extended defects. A detailed analysis of the orientations and shapes of etch pits related to line defects is carried out. Using this information it is then possible to assign different types of etch pits to line defects observed by TEM. The investigations show, that one type of defect are extended dislocations parallel to lt;112 gt;, while the direction of two other types are lt;110 gt; as well as lt;314 gt;, a direction uncommon for line defects in silico

A static higher-order dependency pair framework

We revisit the static dependency pair method for proving termination of higher-order term rewriting and extend it in a number of ways: (1) We introduce a new rewrite formalism designed for general applicability in termination proving of higher-order rewriting, Algebraic Functional Systems with Meta-variables. (2) We provide a syntactically checkable soundness criterion to make the method applicable to a large class of rewrite systems. (3) We propose a modular dependency pair framework for this higher-order setting. (4) We introduce a fine-grained notion of formative and computable chains to render the framework more powerful. (5) We formulate several existing and new termination proving techniques in the form of processors within our framework. The framework has been implemented in the (fully automatic) higher-order termination tool WANDA

ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon

Paramagnetic centers in hydrogenated microcrystalline silicon, µc-Si:H have been studied using dark and light-induced electron-spin resonance (ESR). In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are g=2.0096 and g'=2.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (gi=1.999, g'=1.996), while the other is characterized by large, unresolved broadening such that unique g values cannot be obtained. The average g value for this center is 1.998. The light-induced signal, which we interpret as coming from carriers trapped in the band tails at the crystalline grain boundaries, remains for at least several minutes after the light is turned off. Although the time scales of the decay curves are very different for two samples prepared by different techniques, both decays can be fitted using the assumption of recombination due to distant pairs of electrons and holes trapped in localized band-tail states

Persistent and polarised global actin flow is essential for directionality during cell migration

Cell migration is hypothesized to involve a cycle of behaviours beginning with leading edge extension. However, recent evidence suggests that the leading edge may be dispensable for migration, raising the question of what actually controls cell directionality. Here, we exploit the embryonic migration of Drosophila macrophages to bridge the different temporal scales of the behaviours controlling motility. This approach reveals that edge fluctuations during random motility are not persistent and are weakly correlated with motion. In contrast, flow of the actin network behind the leading edge is highly persistent. Quantification of actin flow structure during migration reveals a stable organization and asymmetry in the cell-wide flowfield that strongly correlates with cell directionality. This organization is regulated by a gradient of actin network compression and destruction, which is controlled by myosin contraction and cofilin-mediated disassembly. It is this stable actin-flow polarity, which integrates rapid fluctuations of the leading edge, that controls inherent cellular persistence