Increased plasticity of the bodily self in eating disorders

Background: The rubber hand illusion (RHI) has been widely used to investigate the bodily self in healthy individuals. The aim of the present study was to extend the use of the RHI to examine the bodily self in eating disorders. Methods: The RHI and self-report measures of eating disorder psychopathology (EDI-3 subscales of Drive for Thinness, Bulimia, Body Dissatisfaction, Interoceptive Deficits, and Emotional Dysregulation; DASS-21; and the Self-Objectification Questionnaire) were administered to 78 individuals with an eating disorder and 61 healthy controls. Results: Individuals with an eating disorder experienced the RHI significantly more strongly than healthy controls on both perceptual (i.e., proprioceptive drift) and subjective (self-report questionnaire) measures. Furthermore, both the subjective experience of the RHI and associated proprioceptive biases were correlated with eating disorder psychopathology. Approximately 20% of the variance for embodiment of the fake hand was accounted for by eating disorder psychopathology, with interoceptive deficits and self-objectification significant predictors of embodiment. Conclusions: These results indicate that the bodily self is more plastic in people with an eating disorder. These findings may shed light on both aetiological and maintenance factors involved in eating disorders, particularly visual processing of the body, interoceptive deficits, and self-objectification

Electron-electron interactions in decoupled graphene layers

Multi-layer graphene on the carbon face of silicon carbide is an intriguing electronic system which typically consists of a stack of ten or more layers. Rotational stacking faults in this system dramatically reduce inter-layer coherence. In this article we report on the influence of inter-layer interactions, which remain strong even when coherence is negligible, on the Fermi liquid properties of charged graphene layers. We find that inter-layer interactions increase the magnitudes of correlation energies and decrease quasiparticle velocities, even when remote-layer carrier densities are small, and that they lessen the influence of exchange and correlation on the distribution of carriers across layers.Comment: 8 pages, 4 figures, submitte

The Pastor\u27s Study, 1941

Report of Pastor Arthur E. Landolt of the First Christian Church of Morehead, Kentucky from October 8, 1941.

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation

Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single graphene sheet, is not observed. We hypothesize that the observed angular dependence arises from weak coupling between the layers; a model calculation of the angular dependence treating the multilayer structure as a stack of independent bilayers with variable interlayer coupling qualitatively reproduces the polarization dependence, providing evidence for coupling.Comment: submitted to Nano Letter

Highly-ordered graphene for two dimensional electronics

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.Comment: Submitted to Appl. Phys. Let

The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].Comment: 9 pages with 6 figure

Cerebellar Theta-Burst Stimulation Impairs Memory Consolidation in Eyeblink Classical Conditioning

Associative learning of sensorimotor contingences, as it occurs in eyeblink classical conditioning (EBCC), is known to involve the cerebellum, but its mechanism remains controversial. EBCC involves a sequence of learning processes which are thought to occur in the cerebellar cortex and deep cerebellar nuclei. Recently, the extinction phase of EBCC has been shown to be modulated after one week by cerebellar continuous theta-burst stimulation (cTBS). Here, we asked whether cerebellar cTBS could affect retention and reacquisition of conditioned responses (CRs) tested immediately after conditioning. We also investigated a possible lateralized cerebellar control of EBCC by applying cTBS on both the right and left cerebellar hemispheres. Both right and left cerebellar cTBSs induced a statistically significant impairment in retention and new acquisition of conditioned responses (CRs), the disruption effect being marginally more effective when the left cerebellar hemisphere was stimulated. These data support a model in which cTBS impairs retention and reacquisition of CR in the cerebellum, possibly by interfering with the transfer of memory to the deep cerebellar nuclei

Fractional excretion of sodium after renal transplantation

Fractional excretion of sodium after renal transplantation. After renal transplantation low urinary sodium concentration (UNa) has been used to diagnose acute rejection (AR), for the early phase of AR is often associated with reduced renal perfusion. Early postoperative graft failure without low UNa favors the diagnosis of ischemic tubular damage (ATN). As fractional excretion of filtered sodium (FENa) better reflects glomerulotubular balance in renal sodium handling, FENa was analyzed during the first 2 weeks in 118 renal allografts. From data on 41 transplants with good early renal function (GEF), a temporal profile of FENa was obtained and used to evaluate the behavior of FFNa by means of standardized FENa (z score). Individual subjects followed their own profile with a small deviation (Δz < 1.4 for 2 days). In 31 instances, acute rejection was diagnosed. In 14 with AR, the z score deviated little; 2 responded to methylprednisolone given intravenously. In 17 with AR, the z score fell significantly (Δz > 1.5 for 2 days), an average of 2.6 days before the first rise in serum creatinine concentration; 15 responded to treatment. The difference between these two groups was significant (P < 0.001). This functional heterogeneity and different responses to treatment may indicate different immunologic mechanisms which damage different target cells in the graft in AR. In 46 patients with acute tubular necrosis after cadaver kidney transplantation FENa was significantly higher than it was in the GEF group as early as the first posttransplantation day and approached normal as the renal function recovered. This behavior of FENa was clearly different from that in AR.Excrétion fractionnelle du sodium après transplantation rénale. Après transplantation rénale une concentration urinaire de sodium (UNa) faible est considérée comme un signe de rejet aigu (AR), du fait que la phase précoce du rejet est souvent associée à une diminution du débit rénal. L'échec précoce d'une greffe sans abaissement de UNa est en faveur d'une tubulopathie ischémique (ATN). Puisque l'excrétion fractionnelle du sodium filtré (FENa) est le meilleur reflet de l'équilibre glomérulo-tubulaire concernant le sodium, FENa a été étudiée pendant les 2 premières semaines d'évolution de 118 allogreffes rénales. A partir de l'observation de 41 transplants ayant eu un bon fonctionnement précoce (GEF) un profil de FENa en fonction du temps a été obtenu et utilisé pour évaluer le comportement de FENa au moyen d'une FENa standardisée (test z). Les sujets ont suivi leur propre profil avec une déviation faible (Δz < 1,4 par 2 jours). Le rejet aigu a été diagnostiqué dans 31 cas. Quatorze d'entre eux avaient une déviation minime de z; deux ont répondu à la methylprednisolone i.v. Dix sept sujets avaient une déviation significative de z (Δz > 1,5 par 2 jours), 2,6 jours en moyenne avant la première augmentation de la créatinine; quinze ont répondu au traitement. La différence entre ces deux groupes est significative (P < 0,001). Cette hétérogénéité fonctionnelle et cette différence de réponse au traitement peuvent être la traduction de mécanismes immunologiques différents qui atteignent des cellules cibles de la greffe différentes au cours du rejet aigu. Chez 46 malades ayant des lésions ischémiques après transplantation de reins de cadavre, FENa était significativement plus élevée que dans le groupe GEF dès le premier jour après la transplantation et revenait vers la normale au fur et à mesure que la fonction rénale s'améliorait. Ce comportement de FENa est nettement différent de celui observé dans les rejets aigus

Silicon intercalation into the graphene-SiC interface

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.Comment: 6 pages, 8 figures, submitted to PR