Turbine vane coolant flow variations and calculated effects on metal temperatures

Seventy-two air-cooled turbine vanes were tested to determine coolant flow variations among the vanes. Calculations were made to estimate the effect of measured coolant flow variations on local vane metal temperatures. The calculations were based on the following assumed operating conditions: turbine inlet temperature, 1700 K (2600 F); turbine inlet pressure, 31 N/sq cm (45 psia); coolant inlet temperature, 811 K (1000 F); and total coolant to gas flow ratio, 0.065. Variations of total coolant flow were not large (about 10 percent from the arithmetic mean) for all 72 vanes, but variations in local coolant flows were large. The local coolant flow variations ranged from 8 to 75 percent, and calculated metal temperature variations ranged from 8 to 60 K (15 to 180 F)

Heat transfer results and operational characteristics of the NASA Lewis Research Center Hot Section Cascade Test Facility

The NASA Lewis Research Center gas turbine hot section test facility has been developed to provide a real-engine environment with well known boundary conditions for the aerothermal performance evaluation/verification of computer design codes. The initial aerothermal research data obtained are presented and the operational characteristics of the facility are discussed. This facility is capable of testing at temperatures and pressures up to 1600 K and 18 atm which corresponds to a vane exit Reynolds number range of 0.5x10(6) to 2.5x10(6) based on vane chord. The component cooling air temperature can be independently modulated between 330 and 700 K providing gas-to-coolant temperature ratios similar to current engine application. Research instrumentation of the test components provide conventional pressure and temperature measurements as well as metal temperatures measured by IR-photography. The primary data acquisition mode is steady state through a 704 channel multiplexer/digitizer. The test facility was configured as an annular cascade of full coverage filmcooled vanes for the initial series of research tests

Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi_2Se_3 with scanning tunneling spectroscopy

Scanning tunneling spectroscopic studies of Bi_2Se_3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the energy difference between the Fermi level (E_F) and the Dirac point (E_D) and diverges as E_F approaches E_D. The Dirac-cone surface state of the host recovers within ~ 2Å spatial distance from impurities, suggesting robust topological protection of the surface state of topological insulators against high-density impurities that preserve time reversal symmetry

Electronic structure of the Fe-layer-catalyzed carbon nanotubes studied by x-ray-absorption spectroscopy

[[abstract]]X-ray-absorption near edge structure (XANES) measurements have been performed to investigate the local electronic structures of the Fe-catalyzed and stabilized carbon nanotubes (CNT) with various diameters. The intensities of the π∗- and σ∗-band and the interlayer-state features in the C K-edge XANES spectra of these CNTs vary with the diameter of the CNT. The white-line features at the C K- and Fe L3-edges suggest a strong hybridization between the C 2p and Fe 3d orbitals, which lead to an enhancement of the C K- and reduction of the Fe L3-edge features, respectively, indicative of a charge transfer from C 2p to Fe 3d orbitals. The Fe K-edge spectra reveal a p–d rehybridization effect that reduces p-orbital occupation at the Fe site.[[booktype]]紙

Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

We report novel properties derived from scanning tunnelling spectroscopic (STS) studies of Dirac fermions in graphene and the surface state (SS) of a strong topological insulator (STI), Bi_2Se_3. For mono-layer graphene grown on Cu by chemical vapour deposition (CVD), strain-induced scalar and gauge potentials are manifested by the charging effects and the tunnelling conductance peaks at quantized energies, respectively. Additionally, spontaneous time-reversal symmetry breaking is evidenced by the alternating anti-localization and localization spectra associated with the zero-mode of two sublattices while global time-reversal symmetry is preserved under the presence of pseudo-magnetic fields. For Bi_2Se_3 epitaxial films grown on Si(111) by molecular beam epitaxy (MBE), spatially localized unitary impurity resonances with sensitive dependence on the energy difference between the Fermi level and the Dirac point are observed for samples thicker than 6 quintuple layers (QL). These findings are characteristic of the SS of a STI and are direct manifestation of strong topological protection against impurities. For samples thinner than 6-QL, STS studies reveal the openup of an energy gap in the SS due to overlaps of wave functions between the surface and interface layers. Additionally, spin-preserving quasiparticle interference wave-vectors are observed, which are consistent with the Rashba-like spin-orbit splitting

Scattering of slow-light gap solitons with charges in a two-level medium

The Maxwell-Bloch system describes a quantum two-level medium interacting with a classical electromagnetic field by mediation of the the population density. This population density variation is a purely quantum effect which is actually at the very origin of nonlinearity. The resulting nonlinear coupling possesses particularly interesting consequences at the resonance (when the frequency of the excitation is close to the transition frequency of the two-level medium) as e.g. slow-light gap solitons that result from the nonlinear instability of the evanescent wave at the boundary. As nonlinearity couples the different polarizations of the electromagnetic field, the slow-light gap soliton is shown to experience effective scattering whith charges in the medium, allowing it for instance to be trapped or reflected. This scattering process is understood qualitatively as being governed by a nonlinear Schroedinger model in an external potential related to the charges (the electrostatic permanent background component of the field).Comment: RevTex, 14 pages with 5 figures, to appear in J. Phys. A: Math. Theo

An amorphous oxide semiconductor thin-film transistor route to oxide electronics

Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications

Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy

Scanning tunneling spectroscopic studies of Bi2Se3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the energy difference between the Fermi level ({E_F}) and the Dirac point ({E_D}) and diverges as {E_F} approaches {E_D}. The Dirac-cone surface state of the host recovers within ~ 2{\AA} spatial distance from impurities, suggesting robust topological protection of the surface state of topological insulators against high-density impurities that preserve time reversal symmetry.Comment: 6 pages, 6 figures. Accepted for fast-track publication in Solid State Communications (2012

Dynamics of light propagation in spatiotemporal dielectric structures

Propagation, transmission and reflection properties of linearly polarized plane waves and arbitrarily short electromagnetic pulses in one-dimensional dispersionless dielectric media possessing an arbitrary space-time dependence of the refractive index are studied by using a two-component, highly symmetric version of Maxwell's equations. The use of any slow varying amplitude approximation is avoided. Transfer matrices of sharp nonstationary interfaces are calculated explicitly, together with the amplitudes of all secondary waves produced in the scattering. Time-varying multilayer structures and spatiotemporal lenses in various configurations are investigated analytically and numerically in a unified approach. Several new effects are reported, such as pulse compression, broadening and spectral manipulation of pulses by a spatiotemporal lens, and the closure of the forbidden frequency gaps with the subsequent opening of wavenumber bandgaps in a generalized Bragg reflector