Decoupling of diffusion from structural relaxation and spatial heterogeneity in a supercooled simple liquid

We report a molecular dynamics simulation of a supercooled simple monatomic glass-forming liquid. It is found that the onset of the supercooled regime results in formation of distinct domains of slow diffusion which are confined to the long-lived icosahedrally structured clusters associated with deeper minima in the energy landscape. As these domains, possessing a low-dimensional geometry, grow with cooling and percolate below $T_c$, the critical temperature of the mode coupling theory, a sharp slowing down of the structural relaxation relative to diffusion is observed. It is concluded that this latter anomaly cannot be accounted for by the spatial variation in atomic mobility; instead, we explain it as a direct result of the configuration-space constraints imposed by the transient structural correlations. We also conjecture that the observed tendency for low-dimensional clustering may be regarded as a possible mechanism of fragility.Comment: To be published in PR

ICP Etching of SiC

A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred

Low damage, highly anisotropic dry etching of SiC

A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of {approximately} 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF{sub 3}:O{sub 2} conditions

Imaging practice in low-grade gliomas among European specialized centers and proposal for a minimum core of imaging

Objective: Imaging studies in diffuse low-grade gliomas (DLGG) vary across centers. In order to establish a minimal core of imaging necessary for further investigations and clinical trials in the field of DLGG, we aimed to establish the status quo within specialized European centers. Methods: An online survey composed of 46 items was sent out to members of the European Low-Grade Glioma Network, the European Association of Neurosurgical Societies, the German Society of Neurosurgery and the Austrian Society of Neurosurgery. Results: A total of 128 fully completed surveys were received and analyzed. Most centers (n=96, 75%) were academic and half of the centers (n=64, 50%) adhered to a dedicated treatment program for DLGG. There were national differences regarding the sequences enclosed in MRI imaging and use of PET, however most included T1 (without and with contrast, 100%), T2 (100%) and TIRM or FLAIR (20, 98%). DWI is performed by 80% of centers and 61% of centers regularly performed PWI.ConclusionA minimal core of imaging composed of T1 (w/wo contrast), T2, TIRM/FLAIR, PWI and DWI could be identified. All morphologic images should be obtained in a slice thickness of 3mm. No common standard could be obtained regarding advanced MRI protocols and PET. Importance of the study: We believe that our study makes a significant contribution to the literature because we were able to determine similarities in numerous aspects of LGG imaging. Using the proposed minimal core of imaging in clinical routine will facilitate future cooperative studies

Imaging practice in low-grade gliomas among European specialized centers and proposal for a minimum core of imaging.

OBJECTIVE: Imaging studies in diffuse low-grade gliomas (DLGG) vary across centers. In order to establish a minimal core of imaging necessary for further investigations and clinical trials in the field of DLGG, we aimed to establish the status quo within specialized European centers. METHODS: An online survey composed of 46 items was sent out to members of the European Low-Grade Glioma Network, the European Association of Neurosurgical Societies, the German Society of Neurosurgery and the Austrian Society of Neurosurgery. RESULTS: A total of 128 fully completed surveys were received and analyzed. Most centers (n = 96, 75%) were academic and half of the centers (n = 64, 50%) adhered to a dedicated treatment program for DLGG. There were national differences regarding the sequences enclosed in MRI imaging and use of PET, however most included T1 (without and with contrast, 100%), T2 (100%) and TIRM or FLAIR (20, 98%). DWI is performed by 80% of centers and 61% of centers regularly performed PWI. CONCLUSION: A minimal core of imaging composed of T1 (w/wo contrast), T2, TIRM/FLAIR, PWI and DWI could be identified. All morphologic images should be obtained in a slice thickness of ≤ 3 mm. No common standard could be obtained regarding advanced MRI protocols and PET. IMPORTANCE OF THE STUDY: We believe that our study makes a significant contribution to the literature because we were able to determine similarities in numerous aspects of LGG imaging. Using the proposed "minimal core of imaging" in clinical routine will facilitate future cooperative studies

Preoperative Quantitative MR Tractography Compared with Visual Tract Evaluation in Patients with Neuropathologically Confirmed Gliomas Grades II and III: A Prospective Cohort Study

Background and Purpose. Low-grade gliomas show infiltrative growth in white matter tracts. Diffusion tensor tractography can noninvasively assess white matter tracts. The aim was to preoperatively assess tumor growth in white matter tracts using quantitative MR tractography (3T). The hypothesis was that suspected infiltrated tracts would have altered diffusional properties in infiltrated tract segments compared to noninfiltrated tracts. Materials and Methods. Forty-eight patients with suspected low-grade glioma were included after written informed consent and underwent preoperative diffusion tensor imaging in this prospective review-board approved study. Major white matter tracts in both hemispheres were tracked, segmented, and visually assessed for tumor involvement in thirty-four patients with gliomas grade II or III (astrocytomas or oligodendrogliomas) on postoperative neuropathological evaluation. Relative fractional anisotropy (rFA) and mean diffusivity (rMD) in tract segments were calculated and compared with visual evaluation and neuropathological diagnosis. Results. Tract segment infiltration on visual evaluation was associated with a lower rFA and high rMD in a majority of evaluated tract segments (89% and 78%, resp.). Grade II and grade III gliomas had similar infiltrating behavior. Conclusion. Quantitative MR tractography corresponds to visual evaluation of suspected tract infiltration. It may be useful for an objective preoperative evaluation of tract segment involvement

Plasma Chemistries for High Density Plasma Etching of SiC

A variety of different plasma chemistries, including SF6, Cl2, IC1 and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (Inductively Coupled Plasma and Electron Cyclotron Resonance). Rates up to 4,500~"min-1 were obtained for SF6 plasmas, while much lower rates (S800~.min-') were achieved with Cl2, ICl and IBr. The F2- based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths 210pm in the SiC. A micromachining process (sequential etch/deposition (<2,000Angstrom min-1) for SiC steps) designed for Si produces relatively low etch rates