Critical Properties of the transition between the Haldane phase and the large-D phase of the spin-1/2 ferromagnetic-antiferromagnetic Heisenberg chain with on-site anisotropy"

We analytically study the ground-state quantum phase transition between the Haldane phase and the large-$D$ (LD) phase of the $S=1/2$ ferromagnetic-antiferromagnetic alternating Heisenberg chain with on-site anisotropy. We transform this model into a generalized version of the alternating antiferromagnetic Heisenberg model with anisotropy. In the transformed model, the competition between the transverse and longitudinal bond alternations yields the Haldane-LD transition. Using the bosonization method, we show that the critical exponents vary continuously on the Haldane-LD boundary. Our scaling relations between critical exponents very well explains the numerical results by Hida.Comment: text 12 pages (Plain TeX), LaTeX sourse files of a table and a figure on reques

Demonstration of an optical quantum controlled-NOT gate without path interference

We report the first experimental demonstration of an optical quantum controlled-NOT gate without any path interference, where the two interacting path interferometers of the original proposals (Phys. Rev. A {\bf 66}, 024308 (2001), Phys. Rev. A {\bf 65}, 012314 (2002)) have been replaced by three partially polarizing beam splitters with suitable polarization dependent transmittances and reflectances. The performance of the device is evaluated using a recently proposed method (Phys. Rev. Lett. {\bf 94}, 160504 (2005)), by which the quantum process fidelity and the entanglement capability can be estimated from the 32 measurement results of two classical truth tables, significantly less than the 256 measurement results required for full quantum tomography.Comment: 4 pages, 3 figure

Formal Relation among Various Hermitian and non-Hermitian Effective Interactions

A general definition of the model-space effective interaction is given. The energy-independent effective hamiltonians derived in a time-independent way are classified systematically.Comment: To appear in IJMPE; Proceedings of "Blueprints for the Nucleus," Istanbul, Turkey, May 200

Realization of a Knill-Laflamme-Milburn C-NOT gate -a photonic quantum circuit combining effective optical nonlinearities

Quantum information science addresses how uniquely quantum mechanical phenomena such as superposition and entanglement can enhance communication, information processing and precision measurement. Photons are appealing for their low noise, light-speed transmission and ease of manipulation using conventional optical components. However, the lack of highly efficient optical Kerr nonlinearities at single photon level was a major obstacle. In a breakthrough, Knill, Laflamme and Milburn (KLM) showed that such an efficient nonlinearity can be achieved using only linear optical elements, auxiliary photons, and measurement. They proposed a heralded controlled-NOT (CNOT) gate for scalable quantum computation using a photonic quantum circuit to combine two such nonlinear elements. Here we experimentally demonstrate a KLM CNOT gate. We developed a stable architecture to realize the required four-photon network of nested multiple interferometers based on a displaced-Sagnac interferometer and several partially polarizing beamsplitters. This result confirms the first step in the KLM `recipe' for all-optical quantum computation, and should be useful for on-demand entanglement generation and purification. Optical quantum circuits combining giant optical nonlinearities may find wide applications across telecommunications and sensing.Comment: 6pages, 3figure

Fabrication of FeSi and Fe3Si compounds by electron beam induced mixing of [Fe/Si]2 and [Fe3/Si]2 multilayers grown by focused electron beam induced deposition

Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO)5, and neopentasilane, Si5H12 as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way we are able to fabricate FeSi and Fe3Si binary compounds from [Fe=Si]2 and [Fe3=Si]2 multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously