19 research outputs found
The Principles of Social Order. Selected Essays of Lon L. Fuller, edited With an introduction by Kenneth I. Winston
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields
Polytype control of spin qubits in silicon carbide
Crystal defects can confine isolated electronic spins and are promising
candidates for solid-state quantum information. Alongside research focusing on
nitrogen vacancy centers in diamond, an alternative strategy seeks to identify
new spin systems with an expanded set of technological capabilities, a
materials driven approach that could ultimately lead to "designer" spins with
tailored properties. Here, we show that the 4H, 6H and 3C polytypes of SiC all
host coherent and optically addressable defect spin states, including spins in
all three with room-temperature quantum coherence. The prevalence of this spin
coherence shows that crystal polymorphism can be a degree of freedom for
engineering spin qubits. Long spin coherence times allow us to use double
electron-electron resonance to measure magnetic dipole interactions between
spin ensembles in inequivalent lattice sites of the same crystal. Together with
the distinct optical and spin transition energies of such inequivalent spins,
these interactions provide a route to dipole-coupled networks of separately
addressable spins.Comment: 28 pages, 5 figures, and supplementary information and figure
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
The divacancies in SiC are a family of paramagnetic defects that show promise
for quantum communication technologies due to their long-lived electron spin
coherence and their optical addressability at near-telecom wavelengths.
Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is
a crucial prerequisite for such technologies, has not yet been demonstrated.
Here we demonstrate a high-fidelity spin-to-photon interface in isolated
divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that
divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the
optical linewidths in our current sample are already similar to those of recent
remote entanglement demonstrations in other systems. Moreover, we find that
3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is
among the longest measured in a naturally isotopic solid. The presence of
defects with these properties in a commercial semiconductor that can be
heteroepitaxially grown as a thin film on shows promise for future quantum
networks based on SiC defects.Comment: 26 pages, 4 figure
Optical polarization of nuclear spins in silicon carbide
We demonstrate optically pumped dynamic nuclear polarization of 29-Si nuclear
spins that are strongly coupled to paramagnetic color centers in 4H- and
6H-SiC. The 99 +/- 1% degree of polarization at room temperature corresponds to
an effective nuclear temperature of 5 microKelvin. By combining ab initio
theory with the experimental identification of the color centers' optically
excited states, we quantitatively model how the polarization derives from
hyperfine-mediated level anticrossings. These results lay a foundation for
SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for
magnetic resonance imaging.Comment: 21 pages including supplementary information; four figures in main
text and one tabl
Electrically and mechanically tunable electron spins in silicon carbide color centers
The electron spins of semiconductor defects can have complex interactions
with their host, particularly in polar materials like SiC where electrical and
mechanical variables are intertwined. By combining pulsed spin resonance with
ab-initio simulations, we show that spin-spin interactions within SiC neutral
divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6
strain sensitivity, and highly spin-dependent photoluminescence with intensity
contrasts of 15-36%. These results establish SiC color centers as compelling
systems for sensing nanoscale fields.Comment: 10 pages, 4 figures, 1 tabl
Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information and spintronic technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here, we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (amp;lt;8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. This allows us to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-line width laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that amp;gt;73% of the overall optical emission is contained with the defects zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.Funding Agencies|U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (LDRD program at Argonne National Laboratory); Air Force Office of Scientific Research [AFOSR FA9550-14-1-0231, AFOSR MURI FA9550-15-1-0029]; Army Research Office [W911NF-15-2-0058]; National Science Foundation [DMR-1306300]; Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM) [VR 349-2006-176]; Knut and Alice Wallenberg Foundation [KAW 2013.0300]</p
Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields